TPCP8003-H
2007-06-22
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPCP8003-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 7.5 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 100V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 100 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 2.2
Drain current
Pulsed (Note 1) IDP 8.8
A
Drain power dissipation (t = 5 s)
(Note 2a)
PD 1.68 W
Drain power dissipation (t = 5 s)
(Note 2b)
PD 0.84 W
Single-pulse avalanche energy
(Note 3) EAS 3.93 mJ
Avalanche current IAR 2.2 A
Repetitive avalanche energy
(Tc=25℃) (Note 4) EAR 0.016 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
1 2 3 4
8 7 6 5
8 7 6 5
1 2 3 4
8003H
※
Lot No.
0.33±0.05
0.28
+0.1
-0.11
1.12
+0.13
-0.12
2.4±0.1
0.475
0.65
2.8±0.1
A
0.05
M
2.9±0.1
41
5
8
0.8±0.05
0.17±0.02
BB
0.05
M
A
S
0.025
S
1.12
+0.13
-0.12
0.28
+0.1
-0.11
1．Source 5．Drain
2．Source 6．Drain
3．Source 7．Drain
4．Gate 8．Drain
TPCP8003-H
2007-06-22
2
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to ambient
(t = 5 s) (Note 2a)
Rth (ch-a) 74.4 °C/W
Thermal resistance, channel to ambient
(t = 5 s) (Note 2b)
Rth (ch-a) 148.8 °C/W
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1 mH, RG = 1 Ω, IAR = 2.2A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
TPCP8003-H
2007-06-22
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA
Drain cutoff current IDSS V
DS = 100 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 100 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = −20 V 60 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V
VGS = 4.5 V, ID = 1.1 A ⎯ 140 190
Drain-source ON-resistance RDS (ON)
VGS = 10 V, ID = 1.1 A ⎯ 130 180
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 1.1 A 2.7 5.4 ⎯ S
Input capacitance Ciss ⎯ 360 ⎯
Reverse transfer capacitance Crss ⎯ 22 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 75 ⎯
pF
Rise time tr ⎯ 7 ⎯
Turn-on time ton ⎯ 14 ⎯
Fall time tf ⎯ 3 ⎯
Switching time
Turn-off time toff
Duty
<
=
1%, tw = 10 μs ⎯ 17 ⎯
ns
VDD
∼
−
80 V, VGS = 10 V, ID = 2.2 A ⎯ 7.5 ⎯
Total gate charge
(gate-source plus gate-drain) Qg
VDD
∼
−
80 V, VGS = 5 V, ID = 2.2 A ⎯ 4.5 ⎯
Gate-source charge 1 Qgs1 ⎯ 1.6 ⎯
Gate-drain (“Miller”) charge Qgd ⎯ 1.3 ⎯
Gate switch charge QSW
VDD
∼
−
80 V, VGS = 10 V, ID = 2.2 A
⎯ 2.0 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 8.8 A
Forward voltage (diode) VDSF I
DR = 2.2 A, VGS = 0 V ⎯ ⎯ −1.2 V
RL = 45.5Ω
VDD
∼
−
50 V
0 V
VGS 10 V
4.7 Ω
ID = 1.1 A
VOUT
TPCP8003-H
2007-06-22
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10
0.1 1 10
100
1000
VGS = 4.5 V
10
0.1 1 10
10
100
0.1
25
100
Ta = −55°C
1
0
0.4
0.6
1
0 2 4 6 8 12
ID = 2.2 A
0.2 1.1
0.5
0.8
10
0
2
4
6
8
Ta = −55°C
0 1 3 4 5
25
100
2
0
0 1 2 3 4
2
4
6
8
VGS = 2.5 V
3
2.75
3.25
5
5
3.5
3.75
4.5
6
10
8
0
0 0.2 0.4 0.6 1
4 10
0.8
4.5
3.75
VGS = 2.5 V
2.75
5
8
6
3.5 3.25
3
1
2
3
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Common source
Ta = 25°C
Pulse test
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS – VGS
Drain current ID (A)
RDS (ON) – ID
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain current ID (A)
⎪Yfs⎪ – ID
Forward transfer admittance |Yfs| (S)
Common source
Ta = 25°C
Pulse test
Common source
VDS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
TPCP8003-H
2007-06-22
5
0
0 2 6 9
20
40
60
80
140
0
2
4
10
14
VDD = 80 V
20
VDS
8
7 4
40
100
120
3 8 5
6
12
40
20
VGS
VDD = 80 V
1 0 40 80 120 160
0
0.4
0.8
1.2
2
1.6
(2)
(1)
0
−80 −40 0 40 80 120 160
0.5
1
2.5
1.5
3
2
0.1 1 10 100
1
100
1000
Ciss
Coss
Crss
10
0
1
10
0.2 0.4 0.6 0.8 1.2
VGS = -1V
0
10 3
0.1
5
1.0
1
50
−80 −40 0 40 80 120 160
100
150
200
300
VGS = 4.5 V
10 V
ID = 2.2A
ID = 2.2A
250
1.1A
1.1A
Total gate charge Qg (nC)
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Vth – Ta
Ambient temperature Ta (°C)
PD – Ta
Drain power dissipation PD (W)
Gate-source voltage VGS (V)
Dynamic input/output
characteristics
Drain-source voltage VDS (V)
(1)Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)Device mounted on a glass-epoxy
board (b) (Note 2b)
ｔ＝5s
Common source
Ta = 25°C
Pulse test
Common source
Pulse test
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Common source
ID = 2.2 A
Ta = 25°C
Pulse test
TPCP8003-H
2007-06-22
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0.1
1 10 100 1000
1
10
100
VDSS max
0.01
0.1
0.0001 0.001 0.1 10 100 1000
100
1000
1
10
1
0.01
(2)
(1)
rth – tw
Pulse width tw (s)
Transient thermal impedance
rth (°C/W)
Safe operating area
Drain-source voltage VDS (V)
Drain current ID (A)
ID max (Pulse) *
Single - pulse
* Single - pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
(1)Device mounted on a glass-epoxy board (a) (Note 2a)
(2)Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 ms*
t = 1 ms*
TPCP8003-H
2007-06-22
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AN D
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, AC CURACY OF INFORMAT I ON, OR NONINF RINGEMEN T.
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limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
