SCH2102 Ordering number : EN8041B SANYO Semiconductors DATA SHEET SCH2102 PNP Epitaxial Planar Silicon Transistor Switching, Driver Applications Applications * Low-frequency power amplifier, high-speed switching, motor drivers, muting. Features * * * Composite type with 2 PNP transistors contained in a single package, facilitating high-density mounting. Ultrasmall package permitting applied sets to be small and slim. Low Ron. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO --15 V --12 V VEBO IC --5 --500 ICP PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (900mm20.8mm) 1unit V mA --1.0 A 0.4 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ max Unit ICBO IEBO VCB=--12V, IE=0A --100 nA Emitter Cutoff Current VEB=--4V, IC=0A --100 nA DC Current Gain hFE Gain-Bandwidth Product fT Cob VCE=--2V, IC=--10mA VCE=--2V, IC=--50mA Output Capacitance VCB=--10V, f=1MHz Marking : EE 300 700 490 4 MHz pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 22509 MS IM TC-00001852 / 53007 TI IM / D1004EA TS IM TA-100994 No.8041-1/4 SCH2102 Continued from preceding page. Parameter Symbol Ratings Conditions Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turm-ON Time ton IE=--10A, IC=0A See specified test circuit. Storage Time tstg Fall Time tf min typ IC=--200mA, IB=--10mA IC=--200mA, IB=--10mA IC=--10A, IE=0A IC=--1mA, RBE= 0.05 V V --12 V V ns See specified test circuit. 57 ns See specified test circuit. 30 ns Electrical Connection 6 5 4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 0.2 1 2 3 Top view 0.2 6 5 4 0.56 1.5 1.6 mV --1.2 --15 1.6 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 0.25 0.05 --300 --0.9 --5 unit : mm (typ) 7028-004 2 3 0.5 --150 30 Package Dimensions 1 Unit max SANYO : SCH6 Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 VR RB 50 RL + + 220F 470F VBE=5V VCC= --5V IC=20IB1= --20IB2= --400mA VCE= --2V --0.6mA --0.5mA --0.4mA --120 --0.3mA --100 --0.2mA --80 --60 --0.1mA --40 --500 --400 --300 --200 5C 25 C --25 C --140 IC -- VBE --600 --0.7mA Ta= 7 --160 mA --0.8 Collector Current, IC -- mA Collector Current, IC -- mA --180 IC -- VCE --1.0m --0.9m A A --200 --100 --20 0 0 IB=0mA --0.5 --1.0 --1.5 Collector-to-Emitter Voltage, VCE -- V --2.0 IT05201 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT05202 No.8041-2/4 SCH2102 hFE -- IC 1000 DC Current Gain, hFE 25C 5 --25C 3 2 100 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 C 25 5C =7 Ta 5C --2 7 5 3 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5C 5 2 75 = Ta 5 --2 3 C C 2 2 3 5 7 --10 2 3 5 7 --100 2 IC / IB=20 5 3 2 25C Ta= --25C --1.0 7 75C 5 3 2 2 3 5 7 --10 2 3 5 7 --100 2 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 10 7 5 3 2 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V ON-resistance, Ron -- IB 2 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05208 PC -- Ta When mounted on ceramic substrate (600mm20.8mm) 1unit OUT 1k 3 2 500 IN 5 3 Collector Current, IC -- mA Collector Dissipation, PC -- mW 7 5 IT05207 1k f=1MHz 7 100 --1.0 3 Ron -- IB 10 5 7--1000 IT05206 VCE= --2V 2 3 3 fT -- IC 1000 3 2 5 7--1000 IT05204 VBE(sat) -- IC f=1MHz 1.0 --0.1 3 Collector Current, IC -- mA Cob -- VCB 5 7 --0.1 --1.0 5 7--1000 IT05205 Collector Current, IC -- mA --100 7 5 --100 2 --10 IC / IB=50 7 3 Collector Current, IC -- mA VCE(sat) -- IC --1000 5 --10 --1.0 5 7--1000 IT05203 Collector Current, IC -- mA IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Ta=75C 7 VCE(sat) -- IC --1000 VCE= --2V 400 300 200 100 0 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06068 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT06712 No.8041-3/4 SCH2102 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2009. Specifications and information herein are subject to change without notice. PS No.8041-4/4