APT8011JLL 800V 51A 0.110 POWER MOS 7 R S S MOSFET 27 2 T- D G (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP (R) D * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID G S All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT8011JLL UNIT 800 Volts 51 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 694 Watts Linear Derating Factor 5.56 W/C PD TJ,TSTG 204 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 51 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 25.5A) TYP MAX Volts 0.110 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 2-2004 Characteristic / Test Conditions 050-7093 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT8011JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1890 Reverse Transfer Capacitance f = 1 MHz 340 VGS = 10V 650 VDD = 400V 100 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 51A @ 25C tf 23 VDD = 400V ID = 51A @ 25C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 19 INDUCTIVE SWITCHING @ 25C 6 1390 VDD = 533V, VGS = 15V ID = 51A, RG = 5 1545 INDUCTIVE SWITCHING @ 125C 6 ns 83 RG = 0.6 Fall Time nC 23 VGS = 15V Turn-off Delay Time pF 525 RESISTIVE SWITCHING Rise Time td(off) UNIT 9480 VGS = 0V 3 MAX J 2095 VDD = 533V, VGS = 15V ID = 51A, RG = 5 1800 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID51A, dl S /dt = 100A/s) Q Reverse Recovery Charge (IS = -ID51A, dl S/dt = 100A/s) Peak Diode Recovery dv/ MAX 51 IS rr dv/ dt TYP 204 (Body Diode) 1.3 (VGS = 0V, IS = -ID51A) dt UNIT Amps Volts 1000 ns 34 C 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 2.77mH, RG = 25, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID51A di/dt 700A/s VR 800V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.12 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7093 Rev A 2-2004 0.20 0.16 0.3 0.1 0 t1 t2 0.04 SINGLE PULSE 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-4 C/W 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT8011JLL RC MODEL Junction temp. (C) 0.0375 0.0554F Power (watts) 0.142 0.751F Case temperature. (C) ID, DRAIN CURRENT (AMPERES) 160 6V 140 VGS =15 & 10V 120 5.5V 100 5V 80 60 4.5V 40 20 4V 0 100 80 TJ = -55C 60 TJ = +25C 40 TJ = +125C 20 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) NORMALIZED TO = 10V @ 25.5A GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D V 1.05 1.00 0.95 0.90 = 25.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.10 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 2-2004 120 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 050-7093 Rev A ID, DRAIN CURRENT (AMPERES) 140 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 APT8011JLL 30,000 OPERATION HERE LIMITED BY RDS (ON) 100 100S 50 1mS 10 5 Coss 1,000 10mS TC =+25C TJ =+150C SINGLE PULSE Crss 1 100 16 I D = 51A 12 VDS= 160V VDS= 400V 8 VDS= 640V 4 0 0 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss 10,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 204 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 350 V DD R 300 G td(off) 100 = 533V = 5 T = 125C J V DD R G 200 = 5 T = 125C J L = 100H 150 60 40 100 20 50 3500 20 0 10 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 4000 tr td(on) 0 10 V DD R G 30 40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT V DD I D 12,000 E ON includes diode reverse recovery. Eon 2000 1500 1000 Eoff Eoff L = 100H EON includes 10,000 diode reverse recovery. 8,000 6,000 4,000 Eon 2,000 500 0 10 = 533V = 51A J L = 100H SWITCHING ENERGY (J) SWITCHING ENERGY (J) 2-2004 2500 30 T = 125C J 3000 20 14,000 = 533V = 5 T = 125C 050-7093 Rev A tf 80 = 533V tr and tf (ns) td(on) and td(off) (ns) L = 100H 250 0 20 30 40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT8011JLL 10% Gate Voltage 90% TJ = 125C Gate Voltage TJ = 125C td(off) td(on) tr DrainVoltage Drain Current 90% 90% 5% 10% tf 5% 10% DrainVoltage Drain Current Switching Energy Switching Energy 0 Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2-2004 r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7093 Rev A 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)