
2
GN2470 IGBT
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Thermal Characteristics
Package IC
(continuous)
IC
(pulsed)
Power Dissipation
@TA = 25OC
θjc
(OC/W)
θja
(OC/W)
TO-252 1.0A 3.5A 2.5W 10 60†
Notes:
† Mounted on FR4 board, 25mm x 25mm x 1.57mm
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVCES Collector-to-emitter breakdown voltage 700 - - V VGE = 0V, IC = 250µA
BVECS Emitter-to-collector breakdown voltage -6.0 -10 - V VGE = 0V, IC = 1.0mA
VGE(th) Gate threshold voltage 1.5 - 3.5 V VCE = VGE, IC = 1.0mA
VCE Collector-to-emitter voltage drop - 4.5 5.0 V IC = 3.0A, VGE = 13V
gfe Forward transconductance 0.5 0.8 - mho VCE = 25V, IC = 2.0A
ICES Zero gate voltage collector current - - 100 µA VGE = 0V, VCE = 600V
IGES Gate-to-emitter leakage current - - ±100 nA VGE = ±20V, VCE = 0V
IC(ON) On-state collector current 3.0 4.0 - A VGE = 10V, VCE = 25V
td(ON) Turn-on delay time - 8.0 15
ns
VCC = 25V
RGEN = 25Ω
RL = 11Ω
trRise time - 400 600
td(OFF) Turn-off delay time - 20 50
tfFall time - 7000 12000
CISS Input capacitance - 100 150
pF
VCE = 25V
VGE = 0V
f = 1MHz
COSS Output capacitance - 12 25
CRSS Reverse transfer capacitance - 2 5
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
RGEN
0V
-10V