MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A C Y - THD (2 TYP.) M E E C P D B E U R G T V - THD (2 TYP.) Q X - DIA. (4 TYP.) L Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. N G Z J J S K H F Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking W E C E G Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A Inches 4.33 Millimeters 110.0 Dimensions N 0.69 17.5 B 3.15 80.0 P 0.61 15.5 C 3.660.008 93.00.25 Q 0.51 13.0 D 2.440.008 62.00.25 R 0.49 12.5 E 1.57 40.0 S 0.45 11.5 F 1.42 Max. 36.0 Max. T 0.43 11.0 G 1.14 29.0 U 0.35 9.0 H 1.00 Max. 25.5 Max. V M8 Metric M8 J 0.94 24.5 W 0.28 7.0 K 0.93 24.0 X 0.256 Dia. Dia. 6.50 L 0.83 21.0 Y M4 Metric M4 M 0.71 18.0 Z 0.12 3.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HA24H is a 1200V (VCES), 600 Ampere Single IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 600 24 Sep.2000 MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Symbol Ratings Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 600 Amperes ICM 1200* Amperes Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) IE 600 Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25C) Pc 4100 Watts Mounting Torque, M8 Main Terminal - 8.83~10.8 N*m Mounting Torque, M6 Mounting - 1.96~2.94 N*m Mounting Torque, M4 Terminal - 0.98~1.47 N*m - 560 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 2.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V - 2.5 3.4** Volts IC = 600A, VGE = 15V, Tj = 150C - 2.25 - Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V - 3000 - nC Emitter-Collector Voltage VEC IE = 600A, VGE = 0V - - 3.5 Volts Min. Typ. Max. Units - - 120 nF - - 42 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V Reverse Transfer Capacitance Cres - - 24 nF Resistive Turn-on Delay Time td(on) - - 300 ns Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 600V, IC = 600A, - - 700 ns td(off) VGE1 = VGE2 = 15V, RG = 2.1 - - 450 ns - - 350 ns Diode Reverse Recovery Time trr tf IE = 600A, diE/dt = -1200A/s - - 250 ns Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = -1200A/s - 4.46 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.03 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.06 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.035 C/W Sep.2000 MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 800 11 600 10 400 9 200 7 1000 800 600 400 200 0 0 2 4 4 3 2 1 6 8 10 0 0 4 8 12 16 0 20 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 3 10 2 6 IC = 600A 4 2 IC = 240A CAPACITANCE, Cies, Coes, Cres, (nF) IC = 1200A Tj = 25C 103 7 5 3 2 102 7 5 8 12 16 1.0 20 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 1.5 2.0 2.5 3.0 103 REVERSE RECOVERY TIME, t rr, (ns) td(off) tf 102 tr VCC = 600V VGE = 15V RG = 2.1 Tj = 125C 102 COLLECTOR CURRENT IC, (AMPERES) 3.5 100 103 102 102 Irr di/dt = -1200A/sec Tj = 25C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 103 t rr Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) t d(on) 101 101 Coes EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 101 100 10-1 101 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 4 Cies VGE = 0V 3 0 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 8 EMITTER CURRENT, IE, (AMPERES) Tj = 25C 0 SWITCHING TIME, (ns) VGE = 15V Tj = 25C Tj = 125C 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 1000 5 1200 12 15 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1200 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 600A 16 VCC = 400V VCC = 600V 12 8 4 0 0 800 1600 2400 3200 4000 4800 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM600HA-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.03C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.06C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000