Sep.2000
W
HKF
S
J J
Z
EC
EG
U
M
C
A
R
PB
T
ED
QL G N
Y - THD (2 TYP.)
V - THD
(2 TYP.)
X - DIA.
(4 TYP.)
EEC
G
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 3.66±0.008 93.0±0.25
D 2.44±0.008 62.0±0.25
E 1.57 40.0
F 1.42 Max. 36.0 Max.
G 1.14 29.0
H 1.00 Max. 25.5 Max.
J 0.94 24.5
K 0.93 24.0
L 0.83 21.0
M 0.71 18.0
Dimensions Inches Millimeters
N 0.69 17.5
P 0.61 15.5
Q 0.51 13.0
R 0.49 12.5
S 0.45 11.5
T 0.43 11.0
U 0.35 9.0
V M8 Metric M8
W 0.28 7.0
X 0.256 Dia. Dia. 6.50
Y M4 Metric M4
Z 0.12 3.0
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM600HA-
24H is a 1200V (VCES), 600 Am-
pere Single IGBT Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 600 24
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM600HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM600HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC600 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 1200* Amperes
Emitter Current** (Tc = 25°C) IE600 Amperes
Peak Emitter Current** IEM 1200* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc4100 Watts
Mounting Torque, M8 Main Ter minal – 8.83~10.8 N · m
Mounting Torque, M6 Mounting – 1.96~2.94 N · m
Mounting Torque, M4 Ter minal – 0.98~1.47 N · m
Weight – 560 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold V oltage VGE(th) IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V – 2.5 3.4** Volts
IC = 600A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QGVCC = 600V, IC = 600A, VGE = 15V – 3000 – nC
Emitter-Collector V oltage VEC IE = 600A, VGE = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 120 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 42 nF
Reverse Transfer Capacitance Cres – – 24 nF
Resistive Turn-on Delay Time td(on) – – 300 ns
Load Rise Time trVCC = 600V, IC = 600A, – – 700 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 2.1Ω– – 450 ns
Times F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 600A, diE/dt = –1200A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = –1200A/µs – 4.46 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.03 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.06 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Ther mal Grease Applied – – 0.035 °C/W
Sep.2000
MITSUBISHI IGBT MODULES
CM600HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
600
200
0
VGE = 20V
15 12
11
8
7
Tj = 25oC
400
800
1000
10
9
1200
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
800
600
400
200
0
1200
1000
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 200 400 600 1000
4
3
2
1
01200
VGE = 15V
Tj = 25°C
Tj = 125°C
800
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
Tj = 25°C
IC = 240A
IC = 1200A
IC = 600A
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
VGE = 0V
10
1
Cies
Coes
Cres
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
trr
Irr
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
di/dt = -1200A/µsec
Tj = 25°C
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 800 1600 2400 3200 4000
16
12
8
4
0
IC = 600A
4800
VCC = 600V
VCC = 400V
COLLECTOR CURRENT IC, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
tr
td(off)
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
td(on)
tf
10
3
7
5
3
2
1.0 1.5 2.0
10
2
7
5
3
2.5 3.0 3.5
3
2Tj = 25°C
Sep.2000
MITSUBISHI IGBT MODULES
CM600HA-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.03°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.06°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
