Document Number: 91068 www.vishay.com
S11-1050-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize Power
MOSFETs offer the designer a new power transistor
standard for switching applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF840LC, SiHF840LC data and test conditions.
PRODUCT SUMMARY
VDS (V) 500
RDS(on) ()V
GS = 10 V 0.85
Qg (Max.) (nC) 39
Qgs (nC) 10
Qgd (nC) 19
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
GD
S
I
2
PAK (TO-262)
GDS
ORDERING INFORMATION
Package D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF840LCS-GE3 SiHF840LCL-GE3
Lead (Pb)-free IRF840LCSPbF IRF840LCLPbF
SiHF840LCS-E3 SiHF840LCL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 °C ID
8.0
A
TC = 100 °C 5.1
Pulsed Drain Currenta, e IDM 28
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb, e EAS 510 mJ
Avalanche CurrentaIAR 8.0 A
Repetiitive Avalanche EnergyaEAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD
125 W
TA = 25 °C 3.1
Peak Diode Recovery dV/dtc, e dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91068
2S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses SiHF840LC data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)aRthJA -40
°C/W
Maximum Junction-to-Case (Drain) RthJC -1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mAc-0.63-V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 25 μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 4.8 Ab- - 0.85
Forward Transconductance gfs VDS = 50 V, ID = 4.8 Ab4.0 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
- 1100 -
pFOutput Capacitance Coss - 170 -
Reverse Transfer Capacitance Crss -18-
Total Gate Charge Qg
VGS = 10 V ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13b, c
--39
nC Gate-Source Charge Qgs --10
Gate-Drain Charge Qgd --19
Turn-On Delay Time td(on)
VDD = 250 V, ID = 8.0 A,
Rg = 9.1 , RD = 30 , see fig. 10b, c
-12-
ns
Rise Time tr -25-
Turn-Off Delay Time td(off) -27-
Fall Time tf -19-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--8.0
A
Pulsed Diode Forward CurrentaISM --28
Body Diode Voltage VSD TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb--2.0V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μsb, c - 490 740 ns
Body Diode Reverse Recovery Charge Qrr -3.04.5μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
Document Number: 91068 www.vishay.com
S11-1050-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91068_01
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 25 °C
4.5 V
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
100101
101
100
10-1
10-1
101
100
10-1
100101
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 150 °C
91068_02
4.5 V
10-1
20 µs Pulse Width
VDS = 50 V
101
100
I
D
, Drain Current (A)
V
GS,
Gate-to-Source Voltage (V)
5678910
4
25 °C
150 °C
91068_03
I
D
= 8.0 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On Resistance
(Normalized)
91068_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
www.vishay.com Document Number: 91068
4S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
2400
2000
1600
1200
0
400
800
100101
Capacitance (pF)
VDS, Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
91068_05
QG, Total Gate Charge (nC)
VGS, Gate-to-Source Voltage (V)
20
16
12
8
0
4
08 40322416
V
DS
= 100 V
V
DS
= 250 V
For test circuit
see figure 13
V
DS
= 400 V
91068_06
I
D
= 8.0 A
48
101
100
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.6 1.41.21.00.8
25 °C
150 °C
V
GS
= 0 V
91068_07
1.6
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
TC = 25 °C
TJ = 150 °C
Single Pulse
102
103
2
5
0.1
2
5
1
2
5
10
2
5
25
110
25
10225
103
91068_08
Document Number: 91068 www.vishay.com
S11-1050-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
Rg
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1 1 10
PDM
t1
t2
t1, Rectangular Pulse Duration (s)
Thermal Response (ZthJC)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
0.2
0.05
0.02
0.01
91068_11
0.1
D = 0.5
www.vishay.com Document Number: 91068
6S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
A
Rg
IAS
0.01 Ω
tp
D.U.T
L
VDS
+
-VDD
Driver
15 V
20 V
IAS
VDS
tp
1200
0
200
400
600
800
1000
25 150
125
10075
50
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Energy (mJ)
Bottom
To p
ID
3.6 A
5.1 A
8.0 A
VDD = 50 V
91068_12c
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 91068 www.vishay.com
S11-1050-Rev. C, 30-May-11 7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91068.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
5
4
13
L1
L2
D
BB
E
H
B
A
Detail A
A
A
c
c2
A
2 x e
2 x b2
2 x b
0.010 A B
MM ± 0.004 B
M
Base
metal
Plating b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
Scale: none
Lead tip
4
34
(Datum A)
2CC
BB
5
5
View A - A
E1
D1
E
4
4
B
H
Seating plane
Gauge
plane
0° to 8°
Detail “A”
Rotated 90° CW
scale 8:1
L3 A1
L4
L
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.