Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 2 3 1 : Emitter 2 : Collecor 3 : Base SANYO : NP ( ) : 2SA1016, 1016K Specifications 1.3 1.3 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Conditions VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage 2SA1016K, 2SC2362K 2SA1016, 2SC2362 Unit (-)120 (-)150 V (-)100 (-)120 V VEBO IC (-)5 V (-)50 mA Collector Current (Pulse) ICP (-)100 mA Collector Dissipation 400 mW Junction Temperature PC Tj 125 C Storage Temperature Tstg -55 to +125 C Collector Current Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)80V, IE=0 (-)1.0 A Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)1.0 A DC Current Gain hFE VCE=(-)6V, IC=(-)1mA fT VCE=(-)6V, IC=(-)1mA Gain-Bandwidth Product Output Capacitance Cob 160* VCB=(-)10V, f=1MHz * : The 2SA1016, K/2SC2362, K are classified by 1mA hFE as follows : Rank F G H hFE 160 to 320 280 to 560 480 to 960 960* (110) 130 (2.2) 1.8 MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.572-1/4 2SA1016, 1016K/2SC2362, 2362K Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Collector-to-Base Breakdown Voltage Ratings Conditions V(BR)CBO min (-)0.5 (-)120 V IC=(-)10A, IE=0 [A1016K, C2362K] (-)150 V IC=(-)1mA, RBE= [A1016, C2362] (-)100 V IC=(-)1mA, RBE= [A1016K, C2362K] (-)120 V Noise Level V(BR)EBO VNO(ave) Noise Peak Level VNO(peak) VCC=30V, IC=1mA, Rg=56k, VG=77dB/1kHz IE=(-)10A, IC=0 VCC=30V, IC=1mA, Rg=56k, VG=77dB/1kHz IC -- VCE (-)5 V Collector Current, IC - mA Collector Current, IC - mA 10 0A --30 A --250 A A --150 --6 --100A --4 --50A --2 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE - V 100A 4 50A IB=0 0 10 20 30 40 50 ITR02952 IB -- VBE 100 2SC2362, 2362K VCE=5V 80 Base Current, IB - A Base Current, IB - A 150A 6 Collector-to-Emitter Voltage, VCE - V --80 --60 --40 60 40 --20 20 --0.2 --0.4 --0.6 --0.8 0.2 0.4 2 0.6 0.8 Base-to-Emitter Voltage, VBE - V 1.0 ITR02954 fT -- IC 5 2SA1016, 1016K VCE=--6V 3 0 ITR02953 fT -- IC 5 2SC2362, 2362K VCE=6V 3 2 100 100 7 5 3 2 1.0 0 --1.0 Gain-Bandwidth Product, fT - MHz 0 Base-to-Emitter Voltage, VBE - V Gain-Bandwidth Product, fT - MHz mV 200A ITR02951 2SA1016, 1016K VCE=--5V 0 8 0 --50 IB -- VBE --100 200 250A 2 IB=0 0 0 mV 2SC2362, 2362K 0A --200 35 IC -- VCE 12 2SA1016, 1016K --8 V [A1016, C2362] Emitter-to-Base Breakdown Voltage --35 Unit IC=(-)10A, IE=0 V(BR)CEO --10 max IC=(-)10mA, IB=(-)1mA Collector-to-Emitter Breakdown Voltage --12 typ 2 3 5 7 10 Collector Current, IC - mA 2 3 5 ITR02955 7 5 3 2 1.0 2 3 5 7 10 Collector Current, IC - mA 2 3 5 ITR02956 No.572-2/4 2SA1016, 1016K/2SC2362, 2362K hFE -- IC 1000 7 5 2SC2362, 2362K VCE=6V 7 5 DC Current Gain, hFE 3 DC Current Gain, hFE hFE -- IC 1000 2SA1016, 1016K VCE=--6V 2 100 3 2 100 7 5 3 2 7 5 3 2 10 7 5 --0.1 2 3 5 2 --1.0 3 5 2 --10 3 --100 ITR02957 Collector Current, IC - mA Output Capacitance, Cob - pF 5 3 2 7 --1.0 2 3 5 7 2 --10 3 Collector-to-Base Voltage, VCB -- V 15 dB 3 5 100 2 ITR02958 5 3 2 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR02960 PC -- Ta 2 4d dB B 12 400 6K 01 2K , 1 36 16 , 2 10 2 A 36 2S SC2 2 6dB 3 6 8d dB B 15 dB dB 8dB 2 4dB 3 2dB dB =1 5 5 2 10 7 500 10k 1.0k 5 2SC2362, 2362K f=1MHz 7 1.0 5 Collector Dissipation, PC - mW 2 3 Cob -- VCB ITR02959 Contour of NF 2SA1016, 1016K f=10Hz f=1Hz VCE=--6V NF Signal Source Resistance, Rg - 3 2 1.0 dB 12 5 5 1.0 1.0 100k 3 10 2SA1016, 1016K f=1MHz 7 2 Collector Current, IC - mA Cob -- VCB 10 Output Capacitance, Cob - pF 10 0.1 5 300 200 100 2 0.1k --0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 0 --1.0 2 3 5 --10 ITR02961 0 25 50 B 12 dB Signal Source Resistance, Rg - k dB 14 --1.0 2 3 5 --10 ITR02963 B 6d B 5 3 2 B --0.1 2 3 2d 5 Collector Current, IC - mA 4d 5 --0.01 2 3 5 2d B 4d B 6d 8d B B 1.0 5 12 3 2 dB 0.1 1.0 dB 0.1k --0.001 2 3 150 ITR02962 14 2 10 dB 3 3 2 =1 5 6d 8 B 12 dB 15 dB dB 5 2SC2362, 2362K VCE=6V f=10Hz NF 1.0k 6dB 2 1d 2d B B 4d B 1dB 3 dB 5 4dB 2dB 10k 125 8d 2 dB 15 B d 12 8dB 3 100 2SA1016, 1016K f=100Hz f=1Hz VCE=--6V .7 =0 NF Signal Source Resistance, Rg - 5 100 Contour of NF Contour of NF 100k 75 Ambient Temperature, Ta - C Collector Current, IC - mA 2 3 5 10 2 3 5 100 2 3 5 1000 2 3 5 10000 ITR02964 Collector Current, IC - A No.572-3/4 2SA1016, 1016K/2SC2362, 2362K Contour of NF Contour of NF 100 0.1k --0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 ITR02965 Collector Current, IC - mA Signal Source Resistance, Rg - k 2 6 8d dB 12 B 15 dB dB 2 10 NF 5 B 3 B 8d 5 2d B 4d 1.0k B 3 B 6d B 4d B 2d 1d 2 5 2SC2362, 2362K f=1kHz VCE=6V dB =1 NF 3 dB 6dB 0.7 5 dB B 8d 10k 4dB B 2d 2 12 3 dB 15 5 2SA1016, 1016K f=1kHz f=1Hz VCE=--6V 1dB dB 0.7 Signal Source Resistance, Rg - 100k =1 d B 3 2 4d 2 B dB B 1.0 6d 5 3 2 0.1 1.0 12 8dB dB 14 dB 2 3 5 10 2 3 5 100 2 3 5 1000 2 3 5 10000 ITR02966 Collector Current, IC - A Contour of NF B 5 0. 3 2 2d 4d B B 1.0k 6d B 12 dB dB 15 2 B B 5 3 7d B 1d 6dB .5d 10k 4dB 2dB 1dB dB 0.7 2 =0 NF 3 dB 15 B d 12 B 8d 5 2SA1016, 1016K f=10kHz f=1Hz VCE=--6V 8d Signal Source Resistance, Rg - 100k 0.1k --0.001 2 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 ITR02967 Collector Current, IC - mA Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.572-4/4