FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25Pmx1500Pm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure is designed for improved linearity over a range of bias conditions and input power levels. es ig n Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET 50% Power-Added Efficiency FPD1500SOT89CE: RoHS Compliant Applications D InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT ew 9 27.5dBm Output Power (P1dB) 17dB Small-Signal Gain (SSG) 0.9dB Noise Figure 42dBm OIP3 Si CMOS Si BJT GaN HEMT rN InP HBT RF MEMS Parameter Min. 26.0 15.5 N ot P1dB Gain Compression Small-Signal Gain (SSG) PAE Noise Figure (NF) OIP3 Specification Typ. Fo LDMOS 38 27.5 17 50 0.9 40 Max. Drivers or Output Stages in PCS/Cellular Base Station Transmitter Amplifiers High Intercept-point LNAs WLL, WLAN, and Other Types of Wireless Infrastructure Systems. Unit dBm dB % dB dBm Condition VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS VDS =5V, IDS =50% IDSS, POUT =P1dB VDS =5V, IDS =50% IDSS; VDS =5V, IDS =25% IDSS VDS =5V, IDS =50% IDSS. Matched for optimal power. Matched for best IP3 VDS =1.3V, VGS =0V 42 dBm Saturated Drain-Source Current (IDSS) 375 465 550 mA Maximum Drain-Source Current 750 mA VDS =1.3V, VGS |+1V (IMAX) Transconductance (GM) 400 ms VDS =1.3V, VGS =0V Gate-Source Leakage Current (IGSO) 1 15 PA VGS =-5V |0.7| |1.0| |1.3| V VDS =1.3V, IDS =1.5mA Pinch-Off Voltage (VP) |12| |16| V IGS =1.5mA Gate-Source Breakdown Voltage (VBDGS) |12| |16| V IGD =1.5mA Gate-Drain Breakdown Voltage (VBDGD) Thermal Resistivity (TJC) * 60 qC/W *Note: TAMBIENT =22C, RF specifications measured at f=1850GHz using CW signal (except as noted). RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS130523 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 FPD1500SOT89CE Absolute Maximum Ratings1 Parameter Rating Caution! ESD sensitive device. Unit Drain-Source Voltage (VDS) (-3V<VGS <-0.5V) 8 V Gate-Source Voltage (VGS) (0V<VDS <+8V) -3 V Drain-Source Current (IDS) (For VDS >2V) IDSS Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). 15 mA RF Input Power (PIN) (Under any acceptable bias state) 350 mW Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 C -55 to 150 C 2.3 W 5 dB 2 Storage Temperature (TSTG) (Non-Operating Storage) Total Power Dissipation (PTOT)3, 4 Gain Compression (Under bias conditions) D Simultaneous Combination of Limits6 (2 or more max. limits) es ig n Gate Current (IG) (Forward or reverse) The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. rN ew Notes: 1 TAMBIENT =22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 2 Max. RF input limit must be further limited if input VSWR>2.5:1. 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 4Total Power Dissipation (P TOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. Total Power Dissipation to be de-rated as follows above 22C: PTOT =2.3-(0.016W/C)xTPACK, where TPACK =source tab lead temperature above 22C. (Coefficient of de-rating formula is Thermal Conductivity.) Exampe: For a 65C carrier temperature: PTOT =2.3W-(0.016x(65-22))=1.61W Biasing Guidelines Fo Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is applied before drain bias. N ot Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, an operating point of 50% of IDSS is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. A class A/B Bias of 25% to 33% of IDSS to achieve better OIP3 and Noise Figure performance is suggested. 2 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130523 FPD1500SOT89CE Frequency Response Bia sed @ 5V, 200m A Biased @ 5V 50% IDSS 35 1.4 MSG 15 10 1 0.8 0.6 0.4 N.F. (dB) 5.7 5.3 4.9 4.5 8 4.1 7.5 3.7 6.5 3.3 5.5 2.9 4.5 2.5 3.5 2.1 2.5 1.7 1.5 0.5 0.5 1.3 0 0 es ig n 0.2 5 0.9 20 1.2 S21 Noise FIgure (dB) MSG 25 Mag S21 & 30 Fr equency (GHz) Frequency (GHz) Device tuned for minimum noise figure. Temperature Response Bia sed @ 5V , 33 %IDS S Data take n on Ev al boa rd @ 1.85GHz 90 80 70 60 50 40 30 20 10 0 -10 (dB) Temp eratu re (C) Evaluation board tuned for maximum power. N ot Fo Temperature (C) N.F. -20 80 50 40 30 20 10 0 -10 -20 12.0 70 13.0 rN SSG (dB) P1dB (dBm) 90 14.0 .70 .60 .50 .40 .30 .20 .10 .00 ew 15.0 P1dB (d Bm) 16.0 60 SSG (dB ) 17.0 Noise Fig ure (dB) 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0 21.0 20.0 18.0 D Biased @ 5V, 50% IDSS Data taken on Eval Board at 1.85GHz DS130523 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 12 FPD1500SOT89CE Typical Tuned RF Performance Power Transfer Characteristic Drai n E ffi ci ency and P AE 3.50 29.00 70 .00% 60 .00% 2.50 25.00 60.00 % PAE E ff. 50.00 % 40 .00% 40.00 % 30 .00% 30.00 % .50 20 .00% 20.00 % 15.00 .00 10 .00% 10.00 % 13.00 -.5 0 1.50 21.00 1.00 19.00 17.00 - 2.00 0.0 0 2.0 0 4. 00 6. 00 8 .00 1 0.00 1 2.00 14.00 P AE ( %) 2.00 23.00 es ig n 50 .00% Gain Comp ressio n (dB) Out put Power ( dBm 70.00 % 3.00 Comp P oint .00% 16.00 - 2.00 Inpu t Po wer (dBm) 0.00 2.00 4 .00 6.0 0 8.00 1 0.00 12 .00 Dr ain Efficiency (% P out 27.00 .00% 14.0 0 16.00 Inp ut Po wer (dBm) Note: Typical power and efficiency are shown above. The devices were biased nominally at VDS =5V, IDS =50% of IDSS, at a test frequency of 1.85GHz. The test devices were tuned (input and output) for maximum output power at 1dB gain compression. T yp ic al In te rm o d ul ati on Pe r fo rm a nc e VD S = 5V ID S = 50 % IDSS a t f = 1. 85 GHz D -10.00 25.00 -20.00 -25.00 21.00 -30.00 ew Ou tp u t Po we r (d Bm ) 23.00 19.00 rN 17.00 15.00 -1.00 1.00 3.00 5.00 7.00 -35.00 -40.00 -45.00 3 r d O de r IM Po ro d uc ts ( dB c -15.00 -50.00 -55.00 11.00 9.00 Input Power (dBm) Pout Im3, dBc Fo Note: pHEMT devices have enhanced intermodulation performance. This yields OIP3 values of about P1dB+14dBm. This IMD enhancement is affected by the quiescent bias and the matching applied to the device. N ot Typical I-V Characteristics DC IV Curves FPD1500SOT89 0.60 Drain -S ource Current (A) 0.50 0.40 VG=-1.5V VG-1.25V VG=-1.00V VG=-0.75V VG=-0.5V VG=-0.25V VG=0V 0.30 0.20 0.10 Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious selfoscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS >1.3V will generally cause errors in the current measurements, even in stabilized circuits. 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Drain-S ou rce Vo ltage (V) 4 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130523 FPD1500SOT89CE Typical Output Plane Power Contours (VDS =5V, IDS =50% IDSS) 1. 0 0. 8 0. 6 Swp Max 159 0.4 4.0 5.0 0.2 23dBm 25dBm 0. 26dBm 4 0. 6 2. 0 0. 1. 8 0 0.2 10.0 10 .0 3. 4. 5. 0 0 0 4.0 5.0 10.0 es ig n 0 0. 2 3.0 2 3dB m 24 dB m 2 5dB m 26 dB m 0. 27 dBm 0. 2 4 0 0. 8 0. 6 1. 0 2. 0 10 .0 3. 4. 5. 0 0 0 28dBm 27dBm -10.0 28dBm -0.2 -5.0 -4.0 -3.0 -0.4 0. 6 0. 8 0. 6 Swp Min 1 1850 MHz -3.0 0. 8 1. 0 2. 0 Sw p M in 1 900 MHz Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) *s: 0.67103.6 0.30+j0.74 (normalized) 15+j37.0: Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. rN ew Contours swept with a constant input power, set so that optimum P1dB is achieved at the point of output match. Input (Source plane) *s: 0.74168.2 0.15+j0.1 (normalized) 7.5+j5.0: Nominal IP3 performance is obtained with this input plane match, and the output plane match as shown. -5.0 -4.0 2 2dB m -0.4 2. 0 1. 0 -10.0 -0.2 D 24dBm S wp Ma x 12 3 2. 0 0.4 3.0 22dBm 1. 0 0. 8 0. 6 2. 0 Typical Scattering Parameters Fo (50: System) 6 GHz 5 GHz 0. 4 N ot 5 .0 0.2 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0. 0. 2 GH z 6 4 0. 1. 8 0 2. 0 10 .0 3. 4. 5. 0 0 0 -10.0 -0.2 -3.0 -0.4 .0 -2 S wp Min 0.5GHz -5.0 -4.0 -3 .0 -1.0 5.0 3 GHz 0. 2 0 -4 .0 - 5. 0 GHz - 0. 8 4.0 7 GHz 1 GHz 2 -0. -0. 6 6 GHz - 10 .0 0 5 GH z 4 GHz 0.2 1 0. 0 1.5 GHz DS130523 3.0 0 4. 2.5 G Hz S11 Swp Max 8GHz 2. 0 0.4 0 3. 3 GHz .41 -0 1. 0 0. 8 0. 6 7 GHz 4 GHz 3.5 GHz 2 G Hz FPD1500SOT89 5V / 50%IDSS S wp Max 8GHz 2. 0 0.6 0 .8 1.0 FPD1500SOT89 5V / 50%IDSS S22 0. 6 0. 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1. 0 2. 0 Swp Min 0.5GHz 5 of 12 FPD1500SOT89CE Typical Sample of RF Performance Noise Figure Small Signal Gain 5000 4000 Co unt Co unt 6000 14000 12000 10000 8000 6000 4000 2000 0 3000 2000 1000 13 14 15 16 17 0 18 0.6 Output Power at 1dB Gain Compression 0.8 0.9 1 1.1 1.2 1.3 NF ( dB) rd Output 3 -Order Intercept Point 14000 6000 12000 5000 10000 4000 Co unt 8000 3000 D Count 0.7 es ig n Gain (dB) 6000 2000 4000 1000 2000 23 24 25 26 27 ew 0 0 28 30 32 34 36 38 40 42 44 IP3 (dBm) P 1dB (dBm) Noise Figure Output Power (P1dB) Standard Deviation Test Limit 15.5 0.20 14.5 CPK 1.7 0.91 0.03 1.20 3.2 25.2 0.25 24.5 0.93 38.7 1.1 36.5 0.67 N ot 3rd-Order Intercept Median Fo Parameter Small-Signal Gain rN Note: The devices were tested by a high-speed automatic test system in a matched circuit based on a 2GHz evaluation board. This circuit is a dual-bias single-pole lowpass topology, and the devices were biased at VDS =4.5V, IDS =120mA, test frequency=2.0GHz. The performance data is summarized below: 6 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130523 FPD1500SOT89CE Reference Design (0.9GHz) Typical Unit Gain P1dB OIP3 20 27 39 dB dBm dBm NF S11 S22 VD 0.7 -5 -15 5 dB dB dB V VG -0.4 to -0.6 V ID 200 mA es ig n Parameter Note: OIP3 measured at 15dBm per tone. Evaluation Board Layout Vd D Vg 33pF 0.01uF 33pF 0.01uF 20 O Lg Ld ew Q1 L1 C1 33pF 0.63" L2 rN 33pF + 1.0uF + Lg Ld L1 L2 C1 Value 47nH 47nH 12nH 4.7nH 5.6pF Component Values -Vg Description LL 1608 Toko chip inductor LL 1608 Toko chip inductor LL 1005 Toko chip inductor LL 1005 Toko chip inductor ATC 600S chip capacitor N ot Component Fo 1.45" 0.01uF 1.0uF 33pF 0.01uF 47 nH 33pF DS130523 33pF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC-blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20: chip resistor from Vishay is used on the gate DC bias line for stability. Vd 47 nH 33pF L1 RF IN 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical 336-678-5570 or sales-support@rfmd.com. support, contact RFMD at (+1) (+1) 336-678-5570 sales-support@ rfm d.com C1 RF OUT L2 7 of 12 FPD1500SOT89CE Reference Design (1.85GHz) Typical Unit Gain P1dB OIP3 16 27 41 dB dBm dBm NF S11 S22 VD 0.9 -9 -14 5 dB dB dB V VG -0.4 to -0.6 V ID 200 mA es ig n Parameter Note: OIP3 measured at 15dBm per tone. Evaluation Board Layout Vd D Vg 33pF 33pF 0.01uF 20 O Lg + 1.0uF + Ld ew Q1 0.01uF 33pF L1 C1 33pF 0.63" rN L2 Fo 1.45" Component Values Lg Ld L1 L2 C1 Value 27nH 27nH 1.5nH 4.7nH 2.2pF -Vg Description LL 1608 Toko chip inductor LL 1608 Toko chip inductor LL 1005 Toko chip inductor LL 1005 Toko chip inductor ATC 600S chip capacitor N ot Component 0.01uF 1.0uF 33pF 0.01uF 27 nH 33pF 8 of 12 33pF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC-blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20: chip resistor from Vishay is used on the gate DC bias line for stability. Vd 27 nH 33pF L1 RF IN 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical ales-support@rfmd.com. support, contact RFMD at ((+1) +1)336-678-5570 336-678-5570or ssal es-support@ rfm d.com C1 RF OUT L2 DS130523 FPD1500SOT89CE Reference Design (2.4GHz to 2.6GHz) @ 2.4GHz @ 2.6GHz Unit Gain P1dB OIP3 12.5 28 39 12.4 28 40 dB dBm dBm NF S11 S22 VD 1.0 -14 -5 5 0.9 -16 -6 5 dB dB dB V VG -0.4 to -0.6 -0.4 to -0.6 V ID 200 200 mA es ig n Parameter Note: OIP3 measured at 15dBm per tone. Evaluation Board Layout Vg Vd 0 .0 1uF 33 pF 0 .01 uF 20O Ld Lg Q1 C2 33p F 0.63" L2 rN C1 L1 ew 3 3pF + 1.0uF + D 33 pF Component 18nH 18nH 0.0nH 3.9nH 1.0pF Component Values -Vg Description LL 1608 Toko chip inductor LL 1608 Toko chip inductor no component (Cu tab) LL 1005 Toko chip inductor ATC 600S chip capacitor 0.01uF N ot Lg Ld L1 L2 C1 and C2 Value Fo 1.45" DS130523 1.0uF 33pF 0.01uF 20 Ohm Evaluation board material: 31mil thick FR4 with 1/2oz. Cu on both sides. DC-blocking capacitors are ATC series 600S. A tantalum 1.0F is used at the drain terminal. All other capacitors are 0603 and 0805 standard chip capacitors. A 0603 size 20: chip resistor from Vishay is used on the gate DC bias line for stability. Vd 18 nH 33pF 18 nH 33pF 33pF C2 RF IN C1 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical 336-678-5570 sales-support@ rfm d.com 336-678-5570 or sales-support@rfmd.com. support, contact RFMD at (+1)(+1) (+1)336-678-5570 sales-support@ rfm d.com RF OUT L2 9 of 12 FPD1500SOT89CE S-Parameters (Biased @ 5V, 50% IDSS) 10 of 12 S12a 52.3 46.3 42.6 39.6 37.4 34.6 32.1 29.4 26.1 23.5 19.7 16.0 12.4 8.5 4.6 0.5 -3.5 -7.4 -11.1 -14.6 -18.6 -22.2 -27.1 -30.6 -36.0 -39.1 -42.7 -46.1 -49.9 -54.2 -58.9 -63.5 -68.0 -72.8 -77.2 -81.6 -86.4 -91.4 -96.4 -101.8 -106.8 -111.1 -114.6 -118.0 -120.9 -124.3 -128.3 S22m 0.293 0.287 0.293 0.285 0.284 0.288 0.279 0.279 0.271 0.273 0.273 0.276 0.290 0.302 0.318 0.335 0.349 0.367 0.381 0.396 0.406 0.417 0.457 0.457 0.476 0.471 0.471 0.470 0.477 0.491 0.507 0.531 0.552 0.575 0.596 0.618 0.637 0.652 0.663 0.673 0.680 0.693 0.698 0.701 0.695 0.691 0.684 S22a -130.2 -141.8 -154.9 -162.6 -172.6 -178.7 175.2 168.4 161.9 153.9 147.1 138.5 131.2 124.2 118.0 112.5 107.0 101.4 96.3 91.7 87.3 83.2 79.0 75.1 68.2 62.2 55.5 50.2 44.5 39.2 33.8 29.3 24.7 21.2 17.7 15.4 13.0 11.0 8.0 5.1 2.5 0.0 -2.9 -6.0 -9.7 -13.3 -18.1 es ig n S12m 0.027 0.033 0.038 0.043 0.047 0.052 0.057 0.061 0.067 0.071 0.076 0.080 0.085 0.089 0.093 0.096 0.100 0.102 0.105 0.108 0.111 0.114 0.121 0.122 0.124 0.125 0.127 0.128 0.130 0.133 0.135 0.135 0.136 0.136 0.136 0.135 0.134 0.133 0.131 0.128 0.125 0.120 0.117 0.115 0.114 0.114 0.117 D S21a 121.6 107.4 95.9 87.0 79.1 71.2 64.2 57.4 50.7 44.6 37.8 31.4 25.1 18.8 12.7 6.5 0.8 -5.0 -10.6 -16.1 -21.7 -26.9 -33.3 -38.4 -45.2 -49.9 -54.7 -59.5 -64.6 -69.8 -75.7 -81.5 -86.8 -92.3 -97.5 -102.5 -107.8 -112.5 -117.4 -121.7 -126.0 -130.2 -134.3 -138.4 -142.1 -146.4 -150.7 ew S21m 18.828 14.373 11.562 9.707 8.254 7.225 6.460 5.820 5.320 4.884 4.506 4.199 3.913 3.651 3.418 3.207 3.018 2.834 2.672 2.531 2.408 2.300 2.263 2.139 2.046 1.926 1.839 1.763 1.698 1.641 1.580 1.512 1.442 1.374 1.311 1.247 1.182 1.124 1.069 1.012 0.975 0.928 0.894 0.865 0.845 0.822 0.806 rN S11a -91.9 -118.7 -136.4 -149.6 -162.1 -171.3 179.8 171.3 163.7 155.8 148.1 141.4 134.1 127.7 120.8 114.3 108.9 103.2 98.2 92.4 87.7 83.4 77.1 73.0 67.3 63.8 60.2 56.4 52.8 48.9 44.5 38.3 32.9 27.9 22.0 16.9 11.9 7.4 3.8 0.5 -2.9 -5.6 -8.1 -10.5 -13.5 -16.4 -19.4 Fo S11m 0.865 0.763 0.728 0.714 0.701 0.694 0.692 0.684 0.685 0.683 0.681 0.692 0.690 0.698 0.706 0.711 0.730 0.742 0.757 0.765 0.769 0.790 0.847 0.830 0.850 0.826 0.829 0.828 0.823 0.836 0.855 0.858 0.855 0.863 0.874 0.875 0.885 0.890 0.895 0.897 0.899 0.902 0.902 0.907 0.913 0.912 0.908 N ot FREQ[GHz] 0.500 0.750 1.000 1.250 1.500 1.750 2.000 2.250 2.500 2.750 3.000 3.250 3.500 3.750 4.000 4.250 4.500 4.750 5.000 5.250 5.500 5.750 6.000 6.250 6.500 6.750 7.000 7.250 7.500 7.750 8.000 8.250 8.500 8.750 9.000 9.250 9.500 9.750 10.000 10.250 10.500 10.750 11.000 11.250 11.500 11.750 12.000 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130523 FPD1500SOT89CE Part Identification Package Outline ew D es ig n Dimensions in millimeters (mm) Tape and Reel Dimensions and Part Orientation rN Tape and Reel information on this material is in accordance with EIA-481-1 except where exceptions are identified N ot Fo Device Footprint Units in inches DS130523 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 11 of 12 FPD1500SOT89CE Preferred Assembly Instructions This package is compatible with both lead-free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260C. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. es ig n ESD Rating These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. MSL Rating D The device has an MSL rating of Level 2. To determine this rating, preconditioning was performed to the device per the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, moisture/reflow sensitivity classification for non-hermetic solid state surface mount devices. Application Notes and Design Data ew Application Notes and design data including S-parameters, noise paramters, and device model are available on request and from www.rfmd.com. Disclaimers rN An MTTF of 7.4 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device. Disclaimers Fo This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Code Description FPD1500SOT89CESQ Sample bag with 25 pieces FPD1500SOT89CESR 7" Reel with 100 pieces N ot Ordering Information 12 of 12 FPD1500SOT89CE 7" Reel with 1000 pieces FPD1500SOT89PCK 1.85GHz PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130523