TOSHIBA MIG10Q906H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q906H, MIG1O0Q906HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS e Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package. e Output (Inverter Stage) : 34 10A/1200V IGBT e Input (Converter Stage) : 3 15A/1600V Silicon Rectifier @ The Electrodes are Isolated from Case. e Outline MIG10Q906H : 2-108K5A MIG10Q906HA : 2-108E6A e Weight : 190g . . EQUIVALENT CIRCUIT P P1 oO oO KK KE 380-7 &@ 5O0k & TOK & 1 2 Ro+ Bo 40 6 8 So U Vv WwW To AAR 120" 9o_ 100" llo' oO oO ; : O13 N Nl 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-03-01 1/9TOSHIBA MIG10Q906H/HA Package Dimension Unit : mm MIG10Q906H 80t0.8 19.054 22.864 11. + 6240.5 5 45.0+0.8 30.48 40.5 15.2440.5 15.040.8 pl) +1 N TT 5 42.0+0.8 11.43+40.5 1.154 0.2%1.040.2 yygythchachch Tey 105+0.5 2-108E5A Unit: mm MIG10Q906HA 80t0.8 19.054 22.864 11. + 6240.5 5 45.0+0.8 30.48 40.5 15.2440.5 5.52 15.040.8 42.040.8 42.0405 11.43+40.5 1.1540.2%1.040.2 | paneer 105+0.5 1.0 t Lr 0. hy 17.00.8 13.040.8 16.5 +0.8 | 2.0406 2-108E6A 1999-03-01 2/9TOSHIBA MIG10Q906H/HA MAXIMUM RATINGS (Ta = 25C) STAGE CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 Vv Gate-Emitter Voltage VGES +20 Vv DC I 15/10 A Collector Current Cc lms Icp 30/20 A Inverter Forward Current DC Ip 10 A orward Curren ims lr 20 A Collector Power Dissipation P 2 (Te = 25C) C 8 w Repetitive Peak Reverse Voltage VRRM 1600 Vv Average Output Rectified Current Io 15 A Converter Peak One Cycle Surge Forward I 250 A Current (50 Hz, Non-Repetitive) FSM Collector-Emitter Voltage VCES 1200 Vv Gate-Emitter Voltage VGES +20 Vv DC Ic 15/10 A IGBT Collector Current ims Icp 30/20 A Brake Collector Power Dissipation (Te = 25C) Fe 82 w Reverse Voltage VR 1200 Vv FWD DC Ip 10 A Forward Current ims iru 20 A Junction Temperature Tj 150 C Storage Temperature Range T stg 40~125 C Module . 2500 Isolation Voltage Visol (AC 1 minute) Vv Screw Torque 6 N-m (25C / 80C) (25C / 80C) (25C / 80C) (25C / 80C) 1999-03-01 3/9TOSHIBA MIG10Q906H/HA ELECTRICAL CHARACTERISTICS (Ta = 25C) a. Inverter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT Gate Leakage Current IGES VGE = 20V, Vcz =0 |+500] nA Collector Cut-Off Current ICES VCE = 1200V, Vag =0 0.5) mA Gate-Emitter Cut-Off Voltage VGE (off) |Ic = 10 mA, VcE=5V 6.0| Vv Collector-Emitter Saturation Vv Ic =10A Tj = 25C _ 2.8} 3.2 v Voltage CE (sat) |von =15V_ |T; = 125C | 31] 37 i . VCE = 10V, VGE = 0, Input Capacitance Cies f= 1MUHz 1200; pF Rise Time ty Vcc = 600 V _ 0.07) 0.15 Switching Turn-On Time | ton Ic = 10A | 0.15] 0.30 Tine VoR = +15V ps Turn-Off Time | to Tj = 125C (Note 1)| 0.60 | 0.90 Forward Voltage VE If = 10A, Vag =0 2.0 2.8| V : Ip = 10A, Vor = -10V, Reverse Recovery Time try di/dt = 200 A/ ps 0.10) 0.25) us . Transistor 1.52], Thermal Resistance Rth (j-c) Diode = = LB Ciw b. Converter stage CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT Repetitive Peak Reverse _ Current IRRM_ | VRRM = 1600 V 50 | A Peak Forward Voltage VEM IpM = 15A 1.05 | 1.20 Vv Peak One Cycle Surge Forward . Current IFSM 50 Hz sine-half-wave 250 A Thermal Resistance Rth (j-c) 1.90 |C/W 1999-03-01 4/9TOSHIBA MIG10Q906H/HA c. Brake stage CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT Gate Leakage Current ICES VGE = 20V, Vcg =0 |+500| nA Collector Cut-Off Current Ices VCE = 1200 V, Voz =0 0.5) mA Reverse Current IR VR = 1200 V, Vern =0 0.5) mA Gate-Emitter Cut-Off Voltage VGE (off) [Ic = 10mA, Voz =5V 6.0; Vv Collector-Emitter Saturation Vv Ic =10A Tj = 25C 2.8| 3.2 Vv Voltage CE (sat) |Wqn =15V_ [T= 125C | 31] 37 . Vor = 10V, Vox =0, Input Capacitance Cies f=- 1M: 1200; pF Rise Time ty Voc = 600 V 0.07] 0.15 Switching Turn-On Time | ton ne = es y 0.15] 0.30 : : GE-= + HS Time Fall Time tf Rq = 120 a _ 0.07 0.10 Turn-Off Time | tof Tj = 125C (Note 1)} 0.60] 0.90 Forward Voltage VE Ip = 10A, VaR =0 2.0 2.8| V . Transistor 1.52 |, Thermal Resistance Rth (j-c) Diode = = Lb Ci W d. Thermistor CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT Zero-power Resistance Ros TI7mM = 0.2mA, Te = 25C 17.31 20 | 23.14] kOQ B Value Bo5/85 |Te = 25C/Te = 85C | 3760; K (Note 1) Switching Time Test Circuit & Timing Chart 1999-03-01 5/9TOSHIBA MIG10Q906H/HA a. Inverter stage/c. Brake stage Ic VCE I - VCE 20 20V COMMON EMITTER COMMON 2 Te = 25C z EMITTER 16 15V Te = 125C 2 Q = 10V ~ B BR 12 ~ ~ o oD g 8 3 Es Ee Q Qo 5 5 a) 4 io) Q 8V 5 od VoR=7V 0 0 2 4 6 8 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vcr (CV) COLLECTOR-EMITTER VOLTAGE Veg (CV) _ VCE VGE VCE VGE S S ( COMMON EMITTER To = 25C COMMON EMITTER Te = 125C COLLECTOR-EMITTER VOLTAGE VcE COLLECTOR-EMITTER VOLTAGE VcE 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VaR (V) GATE-EMITTER VOLTAGE VgR () _ VCE VGE I VGE > ~ MM a COMMON 40C [f 25C HI ry = 125C 8 EMITTER > > < Te = 40C i= o 8 & as S oe 2 ao ee 5 E Oo = 8 Fi 5 oe I oO nt 5 5 8 3 COMMON EMITTER 3 Vor =5V 0 4 8 12 16 20 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VaR () GATE-EMITTER VOLTAGE Vor (WV) 1999-03-01 6/9TOSHIBA MIG10Q906H/HA SWITCHING TIME Ic SWITCHING TIME Rq 3 COMMON EMITTER Vcc = 600 V toff Vor = 15V Ig =10A 1 2 Te = 25C @ B -: Te = 125C 3 3 ic) fc : 5 a o S z z o a 2 2 & 5 S S n na COMMON EMITTER 0.1 Vcc = 600 V VGE = 15V Rg = 1200 : Te = 25C - : Te = 125C 0.03 10 100 10 100 1000 COLLECTOR-CURRENT Ic (A) GATE RESISTANCE Ra (Q) SWITCHING LOSS Ic SWITCHING LOSS Rc > 5 wn wn wa w o a a o oD a 5 5 E E 3 3 COMMON EMITTER COMMON EMITTER Vcc = 600 V Voc = 600 V Var = 15V Var = +15V Rq = 1200 IG =10A 2 Te = 25C 2 Te = 25C - : Tce = 125C mo: 3 To = 125C 4 10 100 10 100 1000 COLLECTOR-CURRENT Ic (A) GATE RESISTANCE Rq (Q) 1999-03-01 7/9TOSHIBA MIG10Q906H/HA CAPACITANCE C (pF) (A} Tp FORWARD CURRENT THERMAL TRANSIENT RESISTANCE 3000 Rin(yy CC/W) C VCE 1000 300 100 COMMON EMITTER | Vor =0 f=1MHz Te = 25C 1 3 10 30 10 100 300 1000 COLLECTOR-EMITTER VOLTAGE Veg (WV) Ip VF 20 16 12 Te = 25C 4 COMMON CATHODE Von =0V 0 1 2 3 4 5 FORWARD VOLTAGE Vp (CV) Rth (t) tw 10 IGBT/FRD S in To = 25 o.01L_ 20 = 256 0.001 0.01 0.1 1 10 PULSE WIDTH tw (s) (Vv) COLLECTOR-EMITTER VOLTAGE VCE (us) ENT Oe (A) REVERSE RECOVERY TIME REVERSE RECOVERY LOSS Edsw (md) PEAK REVERSE RECOVERY CURR Ic (A) COLLECTOR CURRENT 800 600 400 200 ra oO 0.1 0.01 0 VCE, VGE QG VcE =0V COMMON EMITTER Ry = 600 To = 25C 0 20 40 60 80 100 CHARGE Qq (nC) trr, Irr, Edsw Ip COMMON CATHODE Vcc = 600 V Vor = -10V di/dt = 200 A/ ys : Te = 25C -: Te = 125C 2 4 6 8 10 FORWARD CURRENT Ip (A) SHORT CIRCUIT SOA Vcc = 900 V ty = 10 ps VGE = 15V Tj = 125C 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Ver (V) GATE-EMITTER VOLTAGE VcE (V) 1999-03-01 8/9TOSHIBA MIG10Q906H/HA REVERSE BIAS SOA 100 Ic (A) _ o COLLECTOR CURRENT Tj = 128C Vor = 15 1 Rg = 1200 0 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE Vcr (CV) b. Converter stage If VE Rth (t) tw 10 COMMON CATHODE a a g E os Be 10 = om z Zp Fe aN pa 2a 5 c= 25C Ss a = Be O41 fe a ieee e ic z Te = 25C 0.01 0.001 0.01 01 1 10 0.1 0 0.5 1 15 2 PULSE WIDTH tw (s) FORWARD VOLTAGE Vp (CV) 1999-03-01 9/9