SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001 Product data
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
SI2302DS in SOT23.
2. Features
■TrenchMOS™ technology
■Very fast switching
■Logic level compatible
■Subminiature surface mount package.
3. Applications
■Battery management
■High speed switch
■Low power DC to DC converter.
4. Pinning information
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23
2 source (s)
3 drain (d)
MSB003
Top view
12
3
s
d
g
MBB076
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 2 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−20 V
IDdrain current (DC) Tsp =25°C; VGS = 4.5 V −2.5 A
Ptot total power dissipation Tsp =25°C−0.83 W
Tjjunction temperature −150 °C
RDSon drain-source on-state resistance VGS = 4.5 V; ID=3.6A 5685mΩ
VGS = 2.5 V; ID= 3.1 A 77 115 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−20 V
VGS gate-source voltage (DC) −±8V
IDdrain current (DC) Tsp =25°C; VGS = 4.5 V; Figure 2 and 3−2.5 A
Tsp =70°C; VGS = 4.5 V; Figure 2 −2A
IDM peak drain current Tsp =25°C; pulsed; tp≤10 µs; Figure 3 −10 A
Ptot total power dissipation Tsp =25°C; Figure 1 −0.83 W
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −65 +150 °C
Source-drain diode
ISsource (diode forward) current (DC) Tsp =25°C−0.7 A
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 3 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 1. Normalized total power dissipation as a
function of solder point temperature. Fig 2. Normalized continuous drain current as a
function of solder point temperature.
Tsp =25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0 50 100 150 200
T
sp
(oC)
P
der
(%)
03aa25
0
40
80
120
0 50 100 150 200
T
sp
(oC)
I
der
(%)
Pder Ptot
Ptot 25 C
°
()
---------------------- 100%×=Ider ID
ID25C
°
()
-------------------100%×=
03ae92
10-2
10-1
1
10
102
10-1 1 10 102
V
DS
(V)
I
D
(A)
DC 100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 µs
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 4 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W
Tsp =25°C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
03ae91
1
10
10
2
10
3
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th(j-sp)
(K/W)
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
δ
=
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 5 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID=10µA; VGS =0V 20 −−V
VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V
GS;Figure 9 0.65 −−V
IDSS drain-source leakage current VDS =20V; V
GS =0V
Tj=25°C−0.01 1.0 µA
Tj=55°C−−10 µA
IGSS gate-source leakage current VGS =±8 V; VDS =0V −10 100 nA
RDSon drain-source on-state resistance VGS = 4.5 V; ID= 3.6 A; Figure 7 and 8−56 85 mΩ
VGS = 2.5 V; ID= 3.1 A; Figure 7 and 8−77 115 mΩ
Dynamic characteristics
gfs forward transconductance VDS =5V; I
D= 3.6 A −8−S
Qg(tot) total gate charge VDD =10V; V
GS = 4.5 V; ID= 3.6 A; Figure 13 −5.4 10 nC
Qgs gate-source charge −0.65 −nC
Qgd gate-drain (Miller) charge −1.6 −nC
Ciss input capacitance VGS =0V; V
DS = 10 V; f = 1 MHz; Figure 11 −230 −pF
Coss output capacitance −125 −pF
Crss reverse transfer capacitance −80 −pF
td(on) turn-on delay time VDD =10V; R
L= 5.5 Ω; VGS = 4.5 V; RG=6Ω− 12 20 ns
trrise time −23 35 ns
td(off) turn-off delay time −50 100 ns
tffall time −34 50 ns
Source-drain diode
VSD source-drain (diode forward) voltage IS= 1.6 A; VGS =0V;Figure 12 −0.8 1.2 V
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 6 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj=25°CT
j=25°C and 150 °C; VDS >ID×RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values. Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ae93
0
2
4
6
8
10
0 0.5 1 1.5
V
DS
(V)
I
D
(A)
2 V
2.5 V3 V4.5 V
V
GS
= 1.5V
03ae95
0
2
4
6
8
10
0123
VGS (V)
ID
(A) VDS > ID x RDSon
Tj = 150 ºC 25 ºC
03ae94
0.05
0.06
0.07
0.08
0.09
0.1
0246810
I
D
(A)
R
DSon
(Ω)T
j
= 25 ºC V
GS
= 2.5 V
4.5 V
3 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60 0 60 120 180
Tj (ºC)
a
aRDSon
RDSon 25 C
°
()
----------------------------
=
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 7 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID= 1 mA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature. Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
VGS =0V;f=1MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03ag05
0
0.4
0.8
1.2
-60 0 60 120 180
T
j
(ºC)
V
GS(th)
(V)
min
typ
03ah78
10-6
10-5
10-4
10-3
10-2
10-1
0 0.4 0.8 1.2
I
D
(A)
V
GS
(V)
min typ
03ae98
10
102
103
10-1 1 10 102
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 8 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj=25°C and 150 °C; VGS =0V I
D= 3.6 A; VDD =10V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ae97
0
2
4
6
8
10
0 0.4 0.8 1.2
V
SD
(V)
I
S
(A)
T
j
= 25 ºC
150 ºC
V
GS
= 0 V
03ae99
0
1
2
3
4
5
0123456
Q
G
(nC)
V
GS
(V)
I
D
= 3.6 A
T
j
= 25 ºC
V
DD
= 10 V
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 9 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9. Package outline
Fig 14. SOT23.
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 20 November 2001 10 of 12
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6: Revision history
Rev Date CPCN Description
02 20011120 - Includes product data; second version; supersedes initial version 03 september 2001.
•Table 5 “Characteristics” Correction to VGS(th) conditions.
•Figure 9 Correction to curves.
•Figure 10 Correction to curves.
01 20010903 - Product specification; initial version.
9397 750 09107
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 11 of 12
9397 750 09107
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 11 of 12
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Data sheet status[1] Product status[2] Definition
Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 20 November 2001 Document order number: 9397 750 09107
Contents
Philips Semiconductors SI2302DS
N-channel enhancement mode field-effect transistor
1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance. . . . . . . . . . . . . . 4
8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
