BRT13H-X009T - Vishay Presicion Group

BRT11, BRT12, BRT13

www.vishay.com Vishay Semiconductors

Rev. 1.6, 02-Dec-11 1Document Number: 83689

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Optocoupler, Phototriac Output, Non-Zero Crossing

DESCRIPTION

The BRT11, BRT12, and BRT13 product family consists of

AC optocouplers non-zero voltage detectors consisting of

two electrically insulated lateral power ICs which integrate a

thyristor system, a photo detector and noise suppression at

the output and an IR GaAs diode input.

FEATURES

•I

TRMS = 300 mA

• High static dV/dt < 10 000 V/μs

• Electrically insulated between input and output

circuit

• Microcomputer compatible - very low trigger

current

• Trigger current

- (IFT < 1.2 mA) BRT12F

- (IFT < 2 mA) BRT11H, BRT12H, BRT13H

- (IFT < 3 mA) BRT11M, BRT12M, BRT13M

• Non-zero voltage detectors high input sensitivity

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Industrial controls

• Office equipment

• Consumer appliances

AGENCY APPROVALS

• UL 1577, file no. E52744 system code H

• DIN EN 60747-5-2 (VDE 0844)/DIN EN 60747-5-5

(pending) available with option 1

•CQC

Note

(1) Also available in tube, do not put T on the end.

MT2

MT1

i179004-10

ORDERING INFORMATION

BRT1#x-X0##T

PART NUMBER PACKAGE OPTION TAPE

AND

REEL

AGENCY

CERTIFIED/PACKAGE

VDRM (V)

≤ 400 ≤ 600 ≤ 800

UL IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 2 mA IFT = 3 mA

DIP-6 BRT11H BRT11M BRT12F BRT12H BRT12M BRT13H BRT13M

DIP-6, 400 mil, option 6 - - BRT12F-X006 BRT12H-X006 - BRT13H-X006 -

SMD-6, option 7 - - BRT12F-X007T (1) BRT12H-X007T (1) - BRT13H-X007T (1) -

SMD-6, option 9 - - - BRT12H-X009T - BRT13H-X009T -

UL, VDE IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 2 mA IFT = 3 mA

DIP-6 - - - BRT12H-X001 BRT12M-X001 - -

DIP-6, option 6 - - BRT12F-X016 BRT12H-X016 BRT12M-X016 BRT13H-X016 -

SMD-6, option 7 - - - - - BRT13H-X017T (1) -

7.62 mm

DIP-6

10.16 mm

Option 6

> 0.1 mm

Option 9

> 0.7 mm

Option 7

BRT11, BRT12, BRT13

www.vishay.com Vishay Semiconductors

Rev. 1.6, 02-Dec-11 2Document Number: 83689

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Test AC voltage in accordance with DIN 57883, June 1980.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

INPUT

Reverse voltage VR6V

Forward current IF20 mA

Surge forward current IFSM 1.5 A

Power dissipation t ≤ 10 μs Pdiss 30 mW

OUTPUT

Repetitive peak off-state voltage

BRT11 VDRM 400 V

BRT12 VDRM 600 V

BRT13 VDRM 800 V

RMS on-state current ITRMS 300 mA

Single cycle surge current 50 Hz ITSM 3A

Power dissipation Pdiss 600 mW

COUPLER

Maximum power dissipation Ptot 630 mW

Isolation test voltage

(between emitter and detector, climate

per DIN 500414, part 2, Nov. 74) (1)

VISO 5300 VRMS

Reference voltage in accordance

with VDE 0110 b Vref 500 VRMS

Reference voltage in accordance

with VDE 0110 b (insulation group C) Vref 600 VDC

Creepage distance ≥ 7.2 mm

Clearance distance ≥ 7.2 mm

Comparative tracking index per

DIN IEC 112/VDE 0303 part 1

group IIIa according to

DIN VDE 0109 CTI ≥ 175

Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω

VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω

Storage temperature range Tstg - 40 to + 150 °C

Ambient temperature range Tamb - 40 to + 100 °C

BRT11, BRT12, BRT13

www.vishay.com Vishay Semiconductors

Rev. 1.6, 02-Dec-11 3Document Number: 83689

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

(1) Static air, SITAC soldered in PCB or base plate.

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Typical Trigger Delay Time Fig. 2 - Power Dissipation 60 Hz to 60 Hz Line Operation

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward voltage IF = 10 mA VF1.1 1.35 V

Reverse current VR = 6 V IR10 μA

Thermal resistance,

junction to ambient (1) RthJA 750 °C/W

OUTPUT

Peak off-state voltage ID(RMS) = 100 μA

BRT11

VDM

400 μA

BRT12 600 μA

BRT13 800 μA

Off-state current TC = 80 °C, VDRM ID0.5 100 μA

On-state voltage IT = 300 mA VT2.3 V

Pulse current tp ≤ 5 μs, f = 100 Hz,

dItp/dt ≤ 8 A/μs Itp 2A

Critical rate of rise of off-state

voltage

VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10 kV/μs

VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5kV/μs

Critical rate of rise of voltage at

current commutation

VD = 0.67 VDRM, Tj = 25 °C,

dI/dtcrq ≤ 15 A/ms dV/dtcrq 10 kV/μs

VD = 0.67 VDRM, Tj = 80 °C,

dI/dtcrq ≤ 15 A/ms dV/dtcrq 5kV/μs

Critical rate of rise of on-state at

current dI/dtcr 8A/μs

Holding current VD = 10 V IH80 500 μA

Thermal resistance, junction to

ambient RthJA 125 °C/W

COUPLER

Trigger current

VD = 10 V, F - versions IFT 1.2 mA

VD = 10 V, H - versions IFT 0.4 2 mA

VD = 10 V, M - versions IFT 0.8 3 mA

Trigger current temperature

gradient ΔIFT/ΔTj714μA/°C

Capacitance (input to output) f = 1 MHz, VR = 0 V CIO 2pF

= f(IF/IFT25 °C)

D = 200 V

100 5 101 102

100

101

102

103

IF/IFT25°C

17239

tgd

TJ = 25°C

100°C

17240

tot = (ITRMS

)

0 100 200 mA 300

/TRMS

0.2

0.3

0.1

0.0

0.4

0.5

0.6

Ptot

180°

120°

90°

60°

30°

BRT11, BRT12, BRT13

www.vishay.com Vishay Semiconductors

Rev. 1.6, 02-Dec-11 4Document Number: 83689

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Off-State Current

Fig. 4 - Pulse Trigger Current

Fig. 5 - Typical Input Characteristics

Fig. 6 - Typical Output Characteristics

Fig. 7 - Current Reduction

Fig. 8 - Current Reduction

17241

= f(T

)

= 800 V

20 40 60 80 °C 100

- 1

- 0

- 1

- 2

- 3

17242

IFTN=f(tpIF)

IFTN normalized to IFT refering

to tpIF ≥1m

Vop=220V,f= 4 0 ...60Hz typ.

17243

F = ƒ ( V

)

0.9

= 75 °C

10 - 1

10 - 0

10 - 1

10 - 2

1.0 1.1 1.2

25 °C

50 °C

17244

IT=ƒ(VT)

10 - 1

10 - 0

10 - 3

10 - 2

Tj= 25 °C

100 °C

123V4

17245

TRMS = ƒ ( T

thJA = 125 K/W 3)

0 20 40 60 80 °C 100

100

200

300

400

ITRMS

17246

ITRMS = ƒ(TPIN5)

RthJ-PIN5= 16,5 K/W 4)

BRT11, BRT12, BRT13

www.vishay.com Vishay Semiconductors

Rev. 1.6, 02-Dec-11 5Document Number: 83689

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters

PACKAGE MARKING (example)

Notes

• Only options 1, and 7 are reflected in the package marking.

• The VDE logo is only marked on option 1 parts.

• Tape and reel suffix (T) is not part of the package marking.

20802-40

Option 6 Option 7 Option 8 Option 9

10.16 typ.

7.62 typ.

8 min.

7.62 typ.

4.3 ± 0.3

0.6 min.

10.3 max.

0.7 min.

7.62 typ.

12.1 max.

9.27 min.

10.3 max.

7.62 typ.

8 min.0.6 min.

0.1 ± 0.1 3.6 ± 0.3

3.5 ± 0.3

2.55 ± 0.25

0.1 min.

0.25 ± 0.1

3.5 ± 0.3

0.765 ± 0.255

7.62 ref.

9.78 ± 0.25

0.30 typ.

0.1755 ± 0.0735

15° max.

6.4 ± 0.1

8.6 ± 0.1

pin one ID

ISO method A

3.555 ± 0.255

0.84 typ.

2.54 typ.

1 min.

0.485 ± 0.025

1.27 ± 0.05

4° typ.

17222

0.84 typ.

BRT12H

V YWW H 68

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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