DMP2130LDM
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V ID = -250μA, VGS = 0V
IDSS ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V Zero Gate Voltage Drain Current TJ = 25°C
Gate-Body Leakage Current IGSS ⎯ ⎯ ±100 nA VDS = 0V, VGS = ±12V
Gate Threshold Voltage VGS(th) -0.6 ⎯ -1.25 V
VDS = VGS, ID = -250μA
NEW PRODUCT
On State Drain Current (Note 5) ID (ON) -15 ⎯ ⎯ A VGS = -4.5V, VDS = -5V
RDS (ON) ⎯ 51
82
94
80
110
130 mΩ VGS = -4.5V, ID = -4.5A
VGS = -2.7V, ID = -3.8A
VGS = -2.5V, ID = -3.7A
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5) gFS ⎯ 6.3 ⎯ S VDS = -10V, ID = -4.5A
Diode Forward Voltage (Note 5) VSD ⎯ 0.79 -1.26 V IS = -1.7A, VGS = 0V
Maximum Body-Diode Continuous Current (Note 1) IS ⎯ ⎯ 1.7 A ⎯
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge Qg ⎯ 7.3 ⎯ nC VGS = -4.5V, VDS = -10V, ID = 4.5A
Gate-Source Charge Qgs ⎯ 2.0 ⎯ nC VGS = -4.5V, VDS = -10V, ID = 4.5A
Gate-Drain Charge Qgd ⎯ 1.9 ⎯ nC VGS = -4.5V, VDS = -10V, ID = 4.5A
Turn-On Delay Time tD(on) ⎯ 12 ⎯ ns
Turn-On Rise Time tr ⎯ 20 ⎯ ns
DMP2130LDM
Document number: DS31118 Rev. 6 - 2 2 of 4
www.diodes.com May 2008
© Diodes Incorporated
Turn-Off Delay Time tD(off) ⎯ 38 ⎯ ns
tf ⎯ 41 ⎯ ns
VDS = -10V, VGS = -4.5V,
RL = 10Ω, RG = 6Ω
Turn-Off Fall Time
Input Capacitance Ciss ⎯ 443 ⎯ pF
Output Capacitance Coss ⎯ 125 ⎯ pF
Crss ⎯ 98 ⎯ pF
VDS = -16V, VGS = 0V
f = 1.0MHz
Reverse Transfer Capacitance
Notes: 5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
-V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typ ical Transfer C harac teristi cs
GS
V = -5V
Pulsed
DS