Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 0.5A
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 35V
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Limiting di/dt Under Short Circuit
IXDN404 / IXDI404 / IXDF404
First Release
Copyright © IXYS CORPORATION 2004
General Description
The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere
CMOS high speed MOSFET drivers. Each output can source
and sink 4A of peak current while producing voltage rise and
fall times of less than 15ns to drive the latest IXYS MOSFETs
and IGBT's. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating
range. A patent-pending circuit virtually eliminates CMOS
power supply cross conduction and current shoot-through.
Improved speed and drive capabilities are further enhanced by
very low, matched rise and fall times.
The IXDN404 is configured as a dual non-inverting gate driver,
the IXDI404 is a dual inverting gate driver, and the IXDF404 is a
dual inverting + non-inverting gate driver.
The IXDN404/IXDI404/IXDF404 family are available in the
standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16)
packages. For enhanced thermal performance, the SOP-8 and
SOP-16 are also available in a package with an exposed
grounded metal back as the SI and SI-16 repectively.
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Part Number Package Type Temp. Range Configuration
IXDN404PI 8-Pin PDIP
IXDN404SI 8-Pin SOIC with Grounded Metal Back
IXDN404SIA 8-Pin SOIC
IXDN404SI-16 16-Pin SOIC with Grounded Metal Back
IXDN404SIA-16 16-Pin SOIC
-55°C to
+125°C
Dual Non
Inverting
IXDI404PI 8-Pin PDIP
IXDI404SI 8-Pin SOIC with Grounded Metal Back
IXDI404SIA 8-Pin SOIC
IXDI404SI-16 16-Pin SOIC with Grounded Metal Back
IXDI404SIA-16 16-Pin SOIC
-55°C to
+125°C
Dual Inverting
IXDF404PI 8-Pin PDIP
IXDF404SI 8-Pin SOIC with Grounded Metal Back
IXDF404SIA 8-Pin SOIC
IXDF404SI-16 16-Pin SOIC with Grounded Metal Back
IXDF404SIA-16 16-Pin SOIC
-55°C to
+125°C
Inverting +
Non Inverting
Ordering Information
NOTE: Mounting or solder tabs on all packages are connected to ground
DS99018B(08/04)
2
IXDN404 / IXDI404 / IXDF404
Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram
Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GN
D
A
NTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GN
D
A
NTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
* Patent Pending
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GN
D
A
NTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
3
IXDN404 / IXDI404 / IXDF404
Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Electrical Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
VIH High input voltage 4.5V ≤ VCC ≤ 18V 2.5 V
VIL Low input voltage 4.5V ≤ VCC ≤ 18V 0.8 V
VIN Input voltage range -5 VCC + 0.3 V
IIN Input current 0V ≤ VIN ≤ VCC
-10 10
µA
VOH High output voltage VCC - 0.025 V
VOL Low output voltage 0.025 V
ROH Output resistance
@ Output High
VCC = 18V
2 2.5
Ω
ROL Output resistance
@ Output Low
VCC = 18V 1.5 2 Ω
IPEAK Peak output current VCC = 18V
4 A
IDC Continuous output
current
1 A
tR Rise time CL=1800pF Vcc=18V 16 18 ns
tF Fall time CL=1800pF Vcc=18V 13 17 ns
tONDLY On-time propagation
delay
CL=1800pF Vcc=18V 36 40 ns
tOFFDLY Off-time propagation
delay
CL=1800pF Vcc=18V 35 39 ns
VCC Power supply voltage 4.5 18 35 V
ICC
Power supply current VIN = 3.5V
VIN = 0V
VIN = + VCC
1
0
3
10
10
mA
µA
µA
Absolute Maximum Ratings (Note 1)
Paramete
r
V
alue
Supply Voltage 40V
All Other Pins -0.3V to VCC + 0.3V
Junction Temperature 150oC
Storage Temperature -65oC to 150oC
Soldering Lead Temperature
(10 seconds maximum) 300oC
Operating Ratings
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
Thermal Resistance (To Ambient)
8 Pin PDIP (PI) (θJA) 120 K/W
8 Pin SOIC (SIA) 110 K/W
16 Pin SOIC (SIA-16) (θJA) 110 K/W
θJA with heat sink **
Heat sink area of 1 cm2
8 Pin SOIC 95 K/W
16 Pin SOIC-CT 95 K/W
Heat sink area of 3 cm2
8 Pin SOIC 85 K/W
16 Pin SOIC-CT 85 K/W
** Device soldered to metal back pane. Heat sink area is 1 oz.
copper on 1 side of 0.06" thick FR4 PC board.
Parameter Value
Operating Temperature Range -55 oC to 125 oC
Thermal Resistance (Junction to Case) (θJC)
8 Pin SOIC (SI)
16 Pin SOIC (SI-16)
10 K/W
10 K/W
4
IXDN404 / IXDI404 / IXDF404
Symbol Parameter Test Conditions Min Typ Max Units
VIH High input voltage 4.5V ≤ VCC ≤ 18V 2.4 V
VIL Low input voltage 4.5V ≤ VCC ≤ 18V 0.8 V
VIN Input voltage range -5 VCC + 0.3 V
IIN Input current 0V ≤ VIN ≤ VCC
-10 10
µA
VOH High output voltage VCC - 0.025 V
VOL Low output voltage 0.025 V
ROH Output resistance
@ Output High
VCC = 18V
3.4
Ω
ROL Output resistance
@ Output Low
VCC = 18V 2 Ω
IPEAK Peak output current VCC = 18V
3.2 A
IDC Continuous output
current
1 A
tR Rise time CL=1000pF Vcc=18V 11 ns
tF Fall time CL=1000pF Vcc=18V 13 ns
tONDLY On-time propagation
delay
CL=1000pF Vcc=18V 60 ns
tOFFDLY Off-time propagation
delay
CL=1000pF Vcc=18V 59 ns
VCC Power supply voltage 4.5 18 35 V
ICC
Power supply current VIN = 3.5V
VIN = 0V
VIN = + VCC
1
0
3
10
10
mA
µA
µA
Electrical Characteristics
Unless otherwise noted, temperature over -55oC to 150oC, 4.5V ≤ VCC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Specifications Subject To Change Without Notice
5
IXDN404 / IXDI404 / IXDF404
Pin Description
SYMBOL FUNCTION DESCRIPTION
IN A A Channel Input A Channel Input signal-TTL or CMOS compatible.
GND Ground
The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.
IN B B Channel Input B Channel Input signal-TTL or CMOS compatible.
OUT B B Channel Output B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
VCC Supply Voltage
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 35V.
OUT A A Channel Output A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
Figure 4 - Characteristics Test Diagram
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
1
2
3
45
6
7
8
NC NC
In A
Gnd
In B Out B
Vcc
Out A
10uF
25V
Vcc
1800 pF1800 pF
Agilent 1147A
Current Probe
Agilent 1147A
Current Probe
6
IXDN404 / IXDI404 / IXDF404
Output Fall Times vs. Load Capacitance
0
10
20
30
40
50
60
70
80
0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
Load Capacitance (pF)
Fall Time (ns)
8V
10V
12V
18V
25V
35V
Fall Times vs. Supply Voltage
0
10
20
30
40
50
60
70
80
5 101520 253035
Supply Voltage (V)
Fall Times (ns)
200pF
1000pF
1800pF
4700pF
6800pF
10000pF
Rise Times vs. Supply Voltage
0
10
20
30
40
50
60
70
80
5 101520253035
Supply Voltage (V)
Rise Time (ns)
200pF
1000pF
1800pF
4700pF
6800pF
10000pF
Output Rise Times vs. Load Capacitance
0
10
20
30
40
50
60
70
80
0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
Load Capacitance (pF)
Rise Time (ns)
8V
10V
12V
18V
25V
35V
Rise And Fall Times vs. Temperature
CL = 1000pF, Vcc = 18V
0
2
4
6
8
10
12
14
-60 -10 40 90 140 190
Temperature (C)
Time (ns)
tF
tR
Typical Performance Characteristics
Fig. 5 Fig. 6
Fig. 7 Fig. 8
Fig. 9 Fig. 10 Max / Min Input vs. Temperature
CL = 1000pF, Vcc = 18V
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
-60 -10 40 90 140 190
Temperature (C)
Max / Min Input Voltage
Min Input High
Max Input Low
7
IXDN404 / IXDI404 / IXDF404
Supply Current vs. Frequency
Vcc = 18V
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
Frequency (kHz)
Supply Current (ma)
200 pF
1000 pF
1800 pF
6800 pF
10000 pF
4700 pF
Supply Current vs. Frequency
Vcc = 8V
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
Frequency (kHz)
Supply Current (ma
)
200 pF
1000 pF
1800 pF
4700 pF
6800 pF
10000 pF
Supply Current vs. Frequency
Vcc = 12V
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
Frequency (kHz)
Supply Current (ma
)
200 pF
1000 pF
1800 pF
4700 pF
6800 pF
10000 pF
Supply Current vs. Load Capacitance
Vcc = 12V
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Load Capacitance (pF)
Supply Current (mA)
10 kHz
50 kHz
100 kHz
500 kHz
1 Mhz
2 MHz
Supply Current vs. Load Capacitance
Vcc = 18V
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Load Capacitance (pF)
Supply Current (mA)
10 kHz
50 kHz
100 kHz
500 kHz
1 MHz
2 MHz
Supply Current vs. Load Capacitance
Vcc = 8V
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Load Capacitance (pF)
Supply Current (mA)
10 kHz
50 kHz
H
100 kHz
500 kHz
1 MHz
2 MHz
Fig. 12
Fig. 14
Fig. 16
Fig. 11
Fig. 13
Fig. 15
8
IXDN404 / IXDI404 / IXDF404
Supply Current vs. Load Capacitance
Vcc = 35V
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Load Capacitance (pF)
Supply Current (mA)
10 kHz
50
kHz
1
00
kHz
1MHz
500
kHz
2 MHz
Propagation Delay Times vs. Temperature
CL = 1000pF, Vcc = 18V
20
25
30
35
40
45
50
55
60
-60 -10 40 90 140 190
Temperature (C)
Time (ns)
tONDLY
tOFFDLY
Supply Current vs. Frequency
Vcc = 35V
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
200 pF
1000 pF
1800 pF
4700 pF
6800 pF
10000 pF
Propagation Delay vs. Input Voltage
CL = 1800pF Vcc = 15V
20
25
30
35
40
45
50
24681012
Input Voltage (V)
Propagation Delay (ns)
tONDLY
tOFFDLY
Propagation Delay vs. Supply Voltage
CL = 1800pF Vin = 5V@1kHz
0
10
20
30
40
50
60
70
5 101520253035
Supply Voltage (V)
Propagation Delay (ns)
tONDLY
tOFFDLY
Fig. 18
Fig. 17
Fig. 19 Fig. 20
Fig. 21 Fig. 22 Quiescent Supply Current vs. Temperature
Vcc = 18V, Vin = 5V@1kHz, CL = 1000pF
0
0.05
0.1
0.15
0.2
0.25
0.3
-60 -10 40 90 140 190
Temperature (C)
Quiescent Vcc input Current (mA)
9
IXDN404 / IXDI404 / IXDF404
High State Ouput Resistance vs. Supply Voltage
0
1
2
3
4
5
6
5 101520253035
Supply Voltage (V)
High State Output Resistance (Ohms
)
Low State Output Resistance vs. Supply Voltage
0
1
2
3
4
5
6
5 101520253035
Supply Voltage (V)
Low State Output Resistance (Ohms
)
Vcc vs. P Channel Output Current
-12
-10
-8
-6
-4
-2
0
5 101520253035
Vcc (V)
P Channel Output Current (A)
Fig. 25 Fig. 26
Fig. 23 Fig. 24
N Channel Output Current vs. Temperature
Vcc = 18V CL = 1000pF
0
1
2
3
4
5
6
-80 -30 20 70 120 170
Temperature (C)
N Channel Output Current (A)
P Channel Output Current vs. Temperature
Vcc = 18V, CL = 1000pF
0
1
2
3
4
5
6
-80 -30 20 70 120 170
Temperature (C)
P Channel Output Current (A)
Fig. 27 Fig. 28
Vcc vs. N Channel Ouput Current
0
2
4
6
8
10
12
5 101520253035
Vcc (V)
N Channel Output Current (A)
10
IXDN404 / IXDI404 / IXDF404
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
IN A
GND
INB
OUT A
V
S
OUT B
NC
NC
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDN404
1
2
3
4
5
6
7
8
IN A
GND
INB
OUT A
V
S
OUT B
NC
NC
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDI404
16 Pin SOIC
IXDN404SI-16
1
2
3
4
5
6
7
89
10
11
12
13
14
15
16
NC
IN A
NC
GND
GND
NC
IN B
NC NC
OUT B
OUT B
VCC
VCC
OUT A
OUT A
NC
1
2
3
4
5
6
7
8
IN A
GND
INB
OUT A
V
S
OUT B
NC
NC
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDF40
4
16 Pin SOIC
IXDI404SI-16
1
2
3
4
5
6
7
89
10
11
12
13
14
15
16
NC
IN A
NC
GND
GND
NC
IN B
NC NC
OUT B
OUT B
VCC
VCC
OUT A
OUT A
NC
16 Pin SOIC
IXDF404SI-16
1
2
3
4
5
6
7
89
10
11
12
13
14
15
16
NC
IN A
NC
GND
GND
NC
IN B
NC NC
OUT B
OUT B
VCC
VCC
OUT A
OUT A
NC
When designing a circuit to drive a high speed MOSFET
utilizing the IXDN404/IXDI404/IXDF404, it is very important to
observe certain design criteria in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the Output Lead
Inductance.
Say, for example, the IXDN404 is being used to charge a
2500pF capacitive load from 0 to 25 volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V C=2500pF &
∆t=25ns, one can determine that to charge 2500pF to 25 volts
in 25ns will take a constant current of 2.5A. (In reality, the
charging current won’t be constant and will peak somewhere
around 4A).
SUPPLY BYPASSING
In order for the design to turn the load on properly, the IXDN404
must be able to draw this 2.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is a magnitude
larger than the load capacitance. Usually, this would be
achieved by placing two different types of bypassing capacitors,
with complementary impedance curves, very close to the driver
itself. (These capacitors should be carefully selected, low
inductance, low resistance, high-pulse current-service
capacitors). Lead lengths may radiate at high frequency due
to inductance, so care should be taken to keep the lengths of
the leads between these bypass capacitors and the IXDN404
to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXDN404
must be able to drain this 2.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDN404
and its load. Path #2 is between the IXDN404 and its power
supply. Path #3 is between the IXDN404 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXDN404.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twisted-
pair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
of the driver, and connected directly to the ground terminal
of the load.
Supply Bypassing, Grounding Practices And Output Lead inductance
11
IXDN404 / IXDI404 / IXDF404
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: sales@ixys.net
Dimenional Outline: IXDD404PI
Dimenional Outlines: IXDD404SI-CT and IXDD404SIA
Dimenional Outlines: IXDD404SI-16CT and IXDD404SIA-16
