1
Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
(ON3731, ON3732, ON3734, ON3731A, ON3732A, ON3734A)
Optoisolators
Overview
The CNZ3731 series of optoisolators consist of a GaAs infrared
LED which is optically coupled with a Si NPN Darlington
phototransistor, and housed in a small DIL package. The series
provides high I/O isolation voltage and high collector/emitter isolation
voltage, as well as a high current transfer ratio (CTR). This opto
isolator series also includes the two-channel CNC7C501 and the four-
channel CNZ3734, and A type of these models with increased
collector to emitter breakdown voltage (VCEO > 350V).
Features
High collector to emitter breakdown voltage : VCEO > 300 V,
A type : VCEO > 350 V
High current transfer ratio with Darlington phototransistor output
:
CTR = 4000% (typ.)
High I/O isolation voltage : VISO ≥ 5000 V rms
Small DIL package for saving mounting space
UL listed (UL File No. E79920)
A-type models have a guaranteed internal insulating distance of 0.4 mm
Applications
Telephones
Telephone exchange
FAX
Programmable controllers
Signal transfer between circuits with different potentials and impedances
Unit : mm
CNZ3731/CNC2S501
CNC7C501/CNC7C502
CNZ3734/CNC7H501
Unit : mm
Unit : mm
1,3,5,7:
2,4,6,8:
9,11,13,15:
10,12,14,16:
1: Anode
2: Cathode
3: Emitter
4: Collector
1,3: Anodee
2,4: Cathode
5,7: Emitter
6,8: Collector
Anode
Cathode
Emitter
Collector
0 to 15˚
0 to 15˚
0 to 15˚
0 to 15˚
1
23
4
4.58±0.3
1
2
3
4
7
8
5
6
9.66±0.3
0.25
4-0.5±0.1
4-1.2±0.15
2.54±0.25
2.0
3.85±0.3
+0.15
–0
7.62±0.3
2.54 min.0.5 min.
6.2±0.5
0.25
2.0
3.85±0.3
+0.15
–0
7.62±0.3
6.2±0.5
1
2
3
4
5
6
7
8
13
14
15
16
9
10
11
12
19.82±0.5
0 to 15˚
0 to 15˚
0.25
2.0
3.85±0.3
+0.15
–0
7.62±0.3
6.2±0.5
5.2 max.
8-0.5±0.1
8-1.2±0.15
2.54±0.25
2.54 min.0.5 min.
5.2 max.
16-0.5±0.1
16-1.2±0.15
2.54±0.25
2.54 min.0.5 min.
5.2 max.
LED Mark
LED Mark
LED Mark
Pin Connection
Top View
CNZ3731
CNC2S501
Top View
CNC7C501
CNC7C502
1
2
4
3
1
2
8
7
3
4
6
5
1
2
16
15
3
4
14
13
5
6
12
11
7
8
10
9
CNZ3734
CNC7H501
Top View
Note)The part numbers in the parenthesis show conventional part number.
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CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
Optoisolators (Photocouplers)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
CNZ3731 CNC2S501
Reverse voltage (DC)
V
R
66V
Input (Light
Forward current (DC)
I
F
50 50 mA
emitting diode)
Pulse forward current
I
FP*1
11A
Power dissipation
P
D*2
75 75 mW
Collector current
I
C
150 150 mA
Output (Photo
Collector to emitter voltage
V
CEO
300 350 V
transistor)
Emitter to collector voltage
V
ECO
0.3 0.3 V
Collector power dissipation
P
C*3
300 150 300 150 mW
Total power dissipation
P
T
320 200 320 200 mW
Isolation voltage, input to output
V
ISO*4
5000 5000 V
rms
Operating ambient temperature
T
opr
–30 to +100 –30 to +100 ˚C
Storage temperature
T
stg
–55 to +125 –55 to +125 ˚C
*1 Pulse width ≤ 100 µs, repeat 100 pps
*2 Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C.
*3 Output power derating ratio is 3.0 mW/˚C at Ta ≥ 25˚C (CNZ3731, CNC2S501).
Output power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501).
*4 AC 1min., RH < 60 %
CNC7C502
CNC7H501
CNC7C501
CNZ3734
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Reverse current (DC)
I
R
V
R
= 3V 10 µA
characteristics
Forward voltage (DC)
V
F
I
F
= 50mA 1.35 1.5 V
Capacitance between pins
C
t
V
R
= 0V, f
= 1MHz 30 pF
Output
Collector cutoff current
I
CEO
V
CE
= 200V 200 nA
characteristics
Collector to emitter capacitance
C
C
V
CE
= 10V, f
= 1MHz 10 pF
DC current transfer ratio
CTR
*1
V
CE
= 2V, I
F
= 1mA 1000 4000 %
Isolation capacitance, input to output
C
ISO
f
= 1MHz 0.7 pF
Transfer
Isolation resistance, input to output
R
ISO
V
ISO
= 500V 10
11
Ω
characteristics
Rise time
t
r*2
V
CC
= 10V, I
C
= 10mA, 40 µs
Fall time
t
f*3
R
t
= 100Ω15 µs
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 1mA, I
C
= 2mA 1.0 V
*1 DC current transfer ratio (CTR) is a ratio of output current against DC input current.
IC
CTR = × 100 (%)
IF
*2 tr : Time required for the collector current to increase from 10% to 90% of its final value
*3 tf : Time required for the collector current to decrease from 90% to 10% of its initial value
3
Optoisolators (Photocouplers)
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
IF — VF
60
30
20
10
50
40
Forward voltage VF (V)
Forward current I
F
(mA)
0.4 0.8 1.2 1.6 2.42.0
00
Ta = 25˚C
PD — Ta
200
150
100
50
Ambient temperature Ta (˚C )
LED Power dissipation P
D
(mW)
25 75 1250 50 100
0
– 30
IFP — DR
10
5
10
4
10
3
10
2
Duty ratio D
R
Allowable pulse forward current I
FP
(mA)
1
10
Pulse width ≤ 100µs
Ta = 25˚C
10
–1
10
–2
10
–3
Relative CTR — Ta
120
100
80
60
Ambient temperature Ta (˚C )
Relative DC current transfer ratio CTR (%)
40
I
F
= 1mA
V
CE
= 2V
IC — IF
10
3
10
2
10
1
Forward current IF (mA)
Collector current I
C
(mA)
11010
2
10
–1
10
–1
V
CE
= 2V
Ta = 25˚C
CTR — IF
10
6
10
3
10
5
10
4
Forward current I
F
(mA)
DC current transfer ratio CTR (%)
11010
2
10
2
10
–1
V
CE
= 2V
Ta = 25˚C
IC — VCE
160
40
80
120
Collector to emitter voltage VCE (V)
Collector current I
C
(mA)
24 86
00
Ta = 25˚C
PC — Ta
400
300
200
100
Ambient temperature Ta (˚C )
Collector power dissipation P
C
(mW)
25 75 1250 50 100
0
– 30
IC — VCE(sat)
Collector saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
10
3
10
2
10
1
10
–1
Ta = 25˚C
0 0.4 0.8 1.2
0 20406080100– 40 – 20
CNZ3731
CNC2S501
CNC7C501/
CNC7C502
CNZ3734/
CNC7H501
I
F
= 5mA
3mA
2mA
1.5mA
Pc(max.)
0.5mA
1mA
0.5mA
2mA
1mA
I
F
= 5mA
4
CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501
Optoisolators (Photocouplers)
– 40 – 20 0 40 8020 60 100
ICEO — Ta
10
–5
10
–9
10
–10
10
–7
10
–8
10
–6
Ambient temperature Ta (˚C )
V
CE = 200V
Dark current I
CEO
(A)
10
–11
10 10
–3
10
–2
ICEO — VCE
10
–9
10
–8
Collector to emitter voltage V
CE
(V)
Ta = 25˚C
Dark current I
CEO
(A)
10
–10
VCE(sat) — Ta
1.6
1.4
1.2
1.0
0.8
Ambient temperature Ta (˚C )
Collector to emitter saturation voltage V
CE(sat)
(V)
0 20406080100
0.4
0.6
– 40 – 20
IF = 1mA
IC = 2mA
Response time —
External load resistance characteristics
10
3
10
2
10
1
External load resistance RL (kΩ)
Response time (µs)
10
–1
110
10
–1
10
–2
VCC = 10V
IC = 10mA
Ta = 25˚C
Frequency characteristics
Response time measurement circuit
Measurement circuit of
frequency characteristics
Frequency f (kHz)
Voltage gain A
V
(dB)
10
0
– 10
– 20
10110
2
10
3
– 30
10
–1
VCE = 4V
Ta = 25˚C
IC = 10mA
tr
tf
td
ts
RL = 10Ω
1kΩ
100Ω
;;
;
;;
;;
50Ω5kΩ50Ω
50kΩ
V
CC
R
L
;;
;;
;;;
;
50Ω
Sig.IN
R
L
V
CC
10%
90%
t
d
t
r
t
f
t
s
;
;
+10V
16V
100µFSig.OUT
Sig.IN –+
I
C
= 10mA
4mAp - p
5ms
V
1
V
1
V
2
Caution for Safety
DANGER
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Consult our sales staff in advance for information on the following applications:
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Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
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material in powder or vapor form is harmful to human
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Observe the relevant laws and regulations when dispos-
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dustrial waste or household refuse when disposing of
GaAs-containing products.
2001 MAR
