Philips Semiconductors Product specification PowerMOS transistor BUK465-200A eee ee eee ee ee eee GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount Vos Drain-source voltage 200 Vv applications. Ip Drain current (DC) 14 A The device is intended for use in P.., Total power dissipation 125 WwW Switched Mode Power Supplies T Junction temperature 175 C (SMPS), motor control, welding, Rosiom Drain-source on-state 0.23 Q DC/DC and AC/DC converters, and in resistance general purpose switching applications. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION po a H d | ; mb ~ 1 |gate | i \ ! fi Po. 2 {drain hee : | oA, ae j eo TN ae A ed 3 |source iP f S I mb |drain u ( | 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage - - 200 Vv Voar Drain-gate voltage Res = 20 KO - 200 Vv tVes Gate-source voitage - - 30 Vv lp Drain current (DC) Trp = 25 C - 14 A Ip Drain current (DC) Tm = 100 C 10 A low Drain current (pulse peak value) |T,,= 25C - 56 A Prot Total power dissipation Tp = 25C - 125 Ww Tatg Storage temperature - - 55 175 Cc T, Junction temperature - - 175 C THERMAL RESISTANCES SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Re, pmo Thermal resistance junction to - - 1.2 KW mounting base Re ja Therma! resistance junction to minimum footprint, - 50 - KAW ambient FR4 board (see Fig. 18.) February 1996 749 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK465-200A STATIC CHARACTERISTICS Timp = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Vierjpss Drain-source breakdown Veg = OV; Ip = 0.25 MA 200 - - Vv voltage Vasiro) Gate threshold voltage Vos = Vas; Ip = 1 MA 2.1 3.0 4.0 Vv pss Zero gate voltage drain current }Vps = 200 V; Veg = OV; T, = 25C ~ 1 10 pA loss Zero gate voltage drain current |Vp5 = 200 V; Veg = 0 V; T, =125 C - 0.1 1.0 mA lass Gate source leakage current Vag = +30 Vi Vog = OV - 10 160 nA Rosion Drain-source on-state Veg= 10ViI,p=7A - 0.2 | 0.23 Q resistance DYNAMIC CHARACTERISTICS Tap = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Os Forward transconductance Vog= 25 Vi DH 7A 6 8.4 - Ss Cis Input capacitance Veg = OV; Vps = 25 Vi f= 1 MHz - 1400 | 1750 | pF Coss Output capacitance - 190 250 pF Cis Feedback capacitance - 55 80 pF ta on Turn-on delay time Vop = 30 V; 1b = 3 A; - 18 30 ns t, Turn-on rise time Veg = 10 V; Reg = 50 2; - 35 60 ns ta oft Turn-off delay time Reen = 50 Q - 85 120 ns t Turn-off fall time - 35 50 ns La Internal drain inductance Measured from upper edge of drain - 2.5 - nH tab to centre of die Ly Internal source inductance Measured from source lead - 7.5 - nH soldering point to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Trp = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT loa Continuous reverse drain - - - 14 A current loam Pulsed reverse drain current - - - 56 A Vsp Diode forward voltage lp=14A;Vgg=0V - 1.0 1.5 Vv te Reverse recovery time I. = 14 A; -di-/dt = 100 A/us; - 180 - ns Q, Reverse recovery charge Veg = OV; V_ = 30 V - 1.8 - pC AVALANCHE LIMITING VALUE Tinb = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Woss Drain-source non-repetitive Ip =14A3Vpp s 100V; : - 100 md unclamped inductive turn-off Veg = 10 V; Reg = 50 Q energy February 1996 750 Rev 1.000 Philips Semiconductors PowerMOS transistor Product specification BUK465-200A Normalised Power 120 110 100 9a 80 70 60 50 40 30 20 10 0 0 26 40 60 80 100 120 140 +160 180 tmb/ C Fig.1. Normalised power dissipation. PD% = 100-Po/Pp 26-6 HT pp) Zih j-mb / (KW) 10 7S 1E-07 16-05 16-03 t/s Fig.4. Transient thermal impedance. Zin imp = f(t); parameter D = t/T ID% Normalised Current Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 oO 20 40 60 go 100 120 140 160 180 Tmb / C Fig.2. Normalised continuous drain current. ID% = 100-In/Ip 05 -c = fTmp)i Conditions: Veg 2 10 V 107A 30 20 0 2 4 8 10 12 14 16 VDS/V Fig.5. Typical output characteristics, T, = 25 C. Ip = f(Vpg); parameter Vas 18 20 ID 100 fA 0.1 1 1a 100 1000 VDS/V Fig.3. Safe operating area. T,,, = 25 C ip & ton = F(Vos}; low single pulse; parameter t, 0.8 0.6 0.4 6.2 eG o 4 8 12 1G 20 24 28 IDFA Fig.6. Typical on-state resistance, T, = 25 C. Posrony = flp); parameter Vas February 1996 751 Rev 1.000 Philips Semiconductors PowerMOS transistor Product specification BUK465-200A a 2 4 6 8 10 VGS/V Fig.7. Typical transfer characteristics. Ip = f(Ves) ; conditions: Vas = 25 V,; parameter T,_ -60 -20 20 60 . 100 140 180 Wc Fig.i0. Gate threshold voltage. Vasero = f(T); conditions: Ip = 1 MA; Vos = Vas 0 4 8 12 16 20 24 28 ID/A Fig.8. Typical transconductance, T, = 25 C. Os = ftp); conditions: Vig = 25V 16-01 iO/A SUB- THRESHOLD CONDUCTION 1E-02 1E-GF 1E-04 TE-O5 1E-06 1 2 3 4 VGS/V Fig.11. Sub-threshold drain current. lo = "(Vesy conditions: T, = 25 C; Vos = Ves Normalised RDS(ON) = +60 -20 20 60, 100 140 180 WC a = Fosrony/| Rostonyes onl Ti); Ilp= 7A; Ves = 10V Fig.9. Normalised drain-source on-state resistance. 0 ~ 20 , 40 VDS /V a. 12. Typical capacitances, C,,., Coss f Ce C = f(Vps); conditions: Vag = 0 V; f= 1 MHz February 1996 752 Rev 1.000 Philips Semiconductors PowerMOS transistor Product specification BUK465-200A 1 0 0 10 20 36 OG /ne Ves = 1(Q,); conditions: 1, = 14 A; parameter Vp. Fig.13. Typical turn-on gate-charge characteristics. WDSS% 120 170 100 80 70 66 50 40 30 20 20 46 60 80 700 Tmb /C Fig.15. Normalised avalanche energy rating. Woss% = f(T); conditions: |, = 14 A 120 140 160 6180 IF/A 30 20 0 0 1 2 VSDS/V Fig.14. Typical reverse diode current. I. = f(Veps); conditions: V5 = 0 V; parameter T, Fig.16. Avalanche energy test circuit. W, pss = 9.5 Lh, - BV sol BV nss Vp) February 1996 753 Rev 1.000