IAUS300N08S5N012
OptiMOS™-5 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25°C, VGS=10V1) 300 A
TC=100 °C,
VGS=10 V2) 300
Pulsed drain current2) ID,pulse TC=25 °C 1200
Avalanche energy, single pulse2) EAS ID=150 A 817 mJ
Avalanche current, single pulse IAS -300 A
Gate source voltage VGS - ±20 V
Power dissipation Ptot TC=25 °C 375 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 80 V
RDS(on) 1.2 mW
ID300 A
Product Summary
Type Package Marking
IAUS300N08S5N012 PG-HSOG-8-1 A08S5N12
H-PSOG-8-1
1
8
8
1
Tab
Tab
Rev. 1.0 page 1 4/10/2018
IAUS300N08S5N012
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 0.4 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage2) V(BR)DSS VGS=0 V,
ID=1 mA 80 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=275 µA 2.2 3 3.8
Zero gate voltage drain current2) IDSS VDS=80 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=50 V, VGS=0 V,
Tj=85 °C2) - 1 20
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=6 V, ID=75 A - 1.3 1.7 mΩ
VGS=10 V, ID=100 A - 1.0 1.2
Values
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IAUS300N08S5N012
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance Ciss - 12500 16250 pF
Output capacitance Coss - 2000 2600
Reverse transfer capacitance Crss - 86 130
Turn-on delay time td(on) - 31 - ns
Rise time tr- 19 -
Turn-off delay time td(off) - 69 -
Fall time tf- 55 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 56 73 nC
Gate to drain charge Qgd - 37 56
Gate charge total Qg- 178 231
Gate plateau voltage Vplateau - 4.5 - V
Reverse Diode
Diode continous forward current2) IS- - 300 A
Diode pulse current2) IS,pulse - - 1200
Diode forward voltage VSD VGS=0 V, IF=100 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time2) trr - 86 - ns
Reverse recovery charge2) Qrr - 177 - nC
Values
VGS=0 V, VDS=40 V,
f=1 MHz
VDD=40 V, VGS=10 V,
ID=100 A, RG=3.5 W
VDD=40 V, ID=100 A,
VGS=0 to 10 V
2) Defined by design. Not subject to production test.
1) Current is limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry 400A at 25°C.
VR=40 V, IF=50A,
diF/dt=100 A/µs
TC=25 °C
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IAUS300N08S5N012
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID= f(TC); VGS ≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
10000
0.1 1 10 100
ID[A]
VDS [V]
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
ZthJC [K/W]
tp[s]
0
100
200
300
400
0 50 100 150 200
Ptot [W]
TC[°C]
0
50
100
150
200
250
300
350
0 50 100 150 200
ID[A]
TC[°C]
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IAUS300N08S5N012
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C RDS(on) = (ID); Tj= 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = 6V RDS(on) = f(Tj); ID= 100 A; VGS = 10 V
parameter: Tj
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
-55 °C 25 °C 175 °C
0
200
400
600
800
1000
1200
2468
ID[A]
VGS [V]
4.5 V
5.5 V
6 V
6.5 V
5 V
10 V
0
200
400
600
800
1000
1200
01234567
ID[A]
VDS [V]
6 V
10 V
4.5 V 5 V
5.5 V
6.5 V
0.5
1
1.5
2
2.5
3
3.5
4
0 100 200 300
RDS(on) [mW]
ID[A]
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IAUS300N08S5N012
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Typ. avalanche characteristics
IF = f(VSD)IAS = f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
100 °C
150 °C
10
100
1000
1 10 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
104
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
Ciss
Coss
Crss
101
102
103
104
105
0 20 40 60 80
C[pF]
VDS [V]
275 µA
2750 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
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IAUS300N08S5N012
13 Typical avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID_typ = 1 mA
parameter: ID
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID= 300 A pulsed
parameter: VDD
76
77
78
79
80
81
82
83
84
85
86
87
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
16 V
40 V
64 V
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160
VGS [V]
Qgate [nC]
300 A
150 A
75 A
0
400
800
1200
1600
2000
25 75 125 175
EAS [mJ]
Tj[°C]
VGS
Qgate
Qgs Qgd
Qg
VGS
Qgate
Qgs Qgd
Qg
Rev. 1.0 page 7 4/10/2018
IAUS300N08S5N012
Published by
Infineon Technologies AG
81726 Munich, Germany
©Infineon Technologies AG 2018
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 4/10/2018
IAUS300N08S5N012
Revision History
Version
Version 1.0
Changes
Final Datasheet
Date
4/10/2018
Rev. 1.0 page 9 4/10/2018
