CSD08060-Silicon Carbide Schottky Diode Zero R ecovery(R) VRRM Rectifier IF(AVG) = 8 A Qc Features * * * * * * * = 600 V = 22 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits * * * * * Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications * * * Switch Mode Power Supplies Power Factor Correction - Typical PFC Pout : 800W-1600W Motor Drives - Typical Power : 3HP-4HP Part Number Package Marking CSD08060A TO-220-2 CSD08060 Maximum Ratings B D08060 Rev. Datasheet: CS Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V IF(AVG) Average Forward Current 8 12.5 A TC=150C, DC TC=125C, DC IF(PEAK) Peak Forward Current 17.5 A TC=125C, TREP<1 mS, Duty=0.5 33 23 A TC=25C, tP = 10 ms, Half Sine Wave TC=125C, tP=10 ms, Half Sine Wave IFRM Repetitive Peak Forward Surge Current IFSM Non-Repetitive Peak Forward Surge Current 69.5 A TC=25C, tp = 1.5 mS, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 220 A TC=25C, tP = 10 s, Pulse Ptot Power Dissipation 107 35.7 W TC=25C TC=125C -55 to +175 C 1 8.8 Nm lbf-in TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque Note M3 Screw 6-32 Screw Subject to change without notice. www.cree.com Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.6 1.9 1.8 2.4 V IF = 8 A TJ=25C IF = 8 A TJ=175C IR Reverse Current 50 100 200 1000 A VR = 600 V TJ=25C VR = 600 V TJ=175C QC Total Capacitive Charge 22 nC VR = 600 V, IF = 8A di/dt = 500 A/s TJ = 25C C Total Capacitance 470 55 50 pF VR = 0 V, TJ = 25C, f = 1 MHz VR = 200 V, TJ = 25C, f = 1 MHz VR = 400 V, TJ = 25C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RJC Parameter Thermal Resistance from Junction to Case Typ. Unit 1.4 C/W Typical Performance 16 0.0001000000 100 14 0.0000900000 80 0.0000800000 TJ = TJ = TJ = TJ = 10 25C 75C 125C 175C 0.0000700000 IR Reverse Current (A) IF Forward Current (A) 12 0.0000600000 60 8 0.0000500000 6 0.0000400000 40 0.0000300000 4 0.0000200000 20 2 0 0.0000100000 0.0 0.5 1.0 1.5 2.0 2.5 VF Forward Voltage (V) Figure 1. Forward Characteristics TJ = TJ = TJ = TJ = CSD08060 Rev. B 3.0 3.5 0.0000000000 0 0 0.00 100 100.00 25C 75C 125C 175C 200 300 500 200.00 300.00 400 400.00 500.00 VR Reverse Voltage (V) Figure 2. Reverse Characteristics 600 600.00 700 700.00 Typical Performance 80 80 450 450 70 70 400 400 IF(PEAK) Peak Forward Current (A) 350 350 60 60 10% 30% 50% 70% DC 50 50 40 40 C Capacitance (pF) C Capacitance (pF) IF(PEAK) Peak Forward Current (A) Current Derating Duty* Duty* Duty* Duty* 30 30 20 20 300 300 250 250 200 200 150 150 100 100 10 10 50 50 00 25 25 50 50 75 75 100 100 125 125 150 150 175 175 0 0 200 200 1 1.00 TC Case TTemperature (C) C Case Temperature (C) 70% Duty 50% Duty 30% Duty 100 1000 100.00 1000.00 VR Reverse Voltage (V) * Frequency > 1KHz DC 10 10.00 VR Reverse Voltage (V) 10% Duty Figure 3. Current Derating Figure 4. Capacitance vs. Reverse Voltage CSD08060 1.E+01 Zth (C/W) 1.E+00 1.E-01 1.E-02 1.E-03 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 Time (s) Figure 5. Transient Thermal Impedance CSD08060 Rev. B 1.E-02 1.E-01 1.E+00 Typical Performance CSD08060 Power Derating 110110 100100 80 80 70 70 60 60 Power Power Dissipation (W) 90 90 50 50 40 40 30 30 20 20 10 10 0 0 25 50 25 75 50 75 100 125 100 Case Temperature 150 125 175 150 175 TC Case Temperature (C) Figure 6. Power Derating Package Dimensions POS Package TO-220-2 A F J C B D X S E Y 1 2 G T Z U H V L M W N CASE PIN 2 Max .381 .410 9.677 10.414 .235 .255 5.969 6.477 C .100 .120 2.540 3.048 FA .223 Inc hes .590 M in M ax .395.143 .410 GB .235 1.105 .255 HC D J E L F MG .102.500 .112 2.591 .550 .337 .337 8.560 R 0.197 .590 .610 14.986 .025 .036 .149 .153 3.785 1.127.045 1.147 .055 28.626 NH J P L Q M SN .530.195 .550 R 0.010 .165 .028 .036 .048 .045 .055 .195 3 .205 TP .170 3 .180 4.318 6 UQ S V T WU .048 3 .054 1.219 6 3 .110 3 .025 3 1.371 3 5 2.388 5 .356 5 5.5 2.54 3 2.794 .356 .410 3 .150 10.033 .533 9.779 5 3.302 10.414 XV PIN 1 Min A EP OS Q Millimeters Max B D P Inches Min YW X z Y 3 5 .094 3 5 3.014 5 .100 3 .110 .014.385 .021 3 5 .130 .395 .410 .337 5.664 M illim eters .615 14.986 M in M ax .153 3.632 10.033 10.414 5.969 1.147 6.477 28.067 8.560 15.621 3.886 29.134 2.845 12.700 13.970 8.560 R 0.197 15.494 .635 .914 3.886 1.143 1.397 29.134 13.462 13.970 .205 4.953 R 0.254 .185 4.191 .711 .914 .054 1.219 1.143 1.397 6 3 4.953 5.207 4.572 3 5.207 4.699 1.372 6 6 6 2.794 .635 5.5 10.414 3.810 NOTE:Z .130 .150 3.302 3.810 1. Dimension L, M, W apply for Solder Dip Finish CSD08060 Rev. B Recommended Solder Pad Layout TO-220-2 Part Number Package Marking CSD08060A TO-220-2 CSD08060 Diode Model Diode Model CSD06060 VfTT== VVTT+If*R Vf + If*RT T -3 V 0.93+(Tj*(-.93*10-3 )) VT= T= 0.975 + (Tj * -1.0*10 -3) RT= 0.058+(Tj*(.57*10-3 )) RT= 0.09 + (Tj * 0.51*10 ) Note: Tj = Diode Junction Temperature In Degrees Celcius VT RT "The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006. This part number was released previously with Sn/Pb solder plating as a standard industry finish. For more information please contact power_sales@cree.com " This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright (c) 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. CSD08060 Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power