1
Subject to change without notice.
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Datasheet: CSD08060 Rev. B
CSD08060–Silicon Carbide Schottky Diode
Zero recovery® RectifieR
VRRM = 600 V
IF(AVG) = 8 A
Qc = 22 nC
Features
600-Volt Schottky Rectier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefcient on VF
Benets
Replace Bipolar with Unipolar Rectiers
Essentially No Switching Losses
Higher Efciency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 800W-1600W
Motor Drives
- Typical Power : 3HP-4HP
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Package
TO-220-2
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 600 V
VRSM Surge Peak Reverse Voltage 600 V
VDC DC Blocking Voltage 600 V
IF(AVG) Average Forward Current 8
12.5 ATC=150˚C, DC
TC=125˚C, DC
IF(PEAK) Peak Forward Current 17.5 A TC=125˚C, TREP<1 mS, Duty=0.5
IFRM Repetitive Peak Forward Surge Current 33
23 ATC=25˚C, tP = 10 ms, Half Sine Wave
TC=125˚C, tP=10 ms, Half Sine Wave
IFSM Non-Repetitive Peak Forward Surge Current 69.5 A TC=25˚C, tp = 1.5 mS, Half Sine Wave
IFSM Non-Repetitive Peak Forward Surge Current 220 A TC=25˚C, tP = 10 µs, Pulse
Ptot Power Dissipation 107
35.7 WTC=25˚C
TC=125˚C
TJ , Tstg Operating Junction and Storage Temperature -55 to
+175 ˚C
TO-220 Mounting Torque 1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
PIN 1
PIN 2 CASE
Part Number Package Marking
CSD08060A TO-220-2 CSD08060
2CSD08060 Rev. B
Figure 2. Reverse Characteristics
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.6
1.9
1.8
2.4 VIF = 8 A TJ=25°C
IF = 8 A TJ=175°C
IRReverse Current 50
100
200
1000 μAVR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QCTotal Capacitive Charge 22 nC
VR = 600 V, IF = 8A
di/dt = 500 A/μs
TJ = 25°C
CTotal Capacitance
470
55
50
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC Thermal Resistance from Junction to Case 1.4 °C/W
Typical Performance
1.
Figure 1. Forward Characteristics
VF Forward Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IF Forward Current (A)
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
16
14
12
10
8
6
4
2
0
100
80
60
40
20
0
0 100 200 300 400 500 600 700
VR Reverse Voltage (V)
IR Reverse Current (μA)
0.0000000000
0.0000100000
0.0000200000
0.0000300000
0.0000400000
0.0000500000
0.0000600000
0.0000700000
0.0000800000
0.0000900000
0.0001000000
0.00 100.00 200.00 300.00 400.00 500.00 600.00 700.00
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
3CSD08060 Rev. B
Figure 3. Current Derating Figure 4. Capacitance vs. Reverse Voltage
Figure 5. Transient Thermal Impedance
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175 200
I
F(PEAK)
Peak Forward Current (A)
T
C
Case Temperature (
°
C
)
* Frequency > 1KHz
0
50
100
150
200
250
300
350
400
450
1.00 10.00 100.00 1000.00
VRReverse Voltage (V)
C Capacitance (pF)
450
400
350
300
250
200
150
100
50
0
1 10 100 1000
V
R
Reverse Voltage (V)
C
Capacitance (pF)
CSD08060
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Time
Zth (°C/W)
Current Derating
0
10
20
30
40
50
60
70
80
25 50 75 100 125 150 175 200
T
C
Case Temperature (°C)
I
F(PEAK)
Peak Forward Current (A)
DC 70% Duty 50% Duty 30% Duty 10% Duty
10% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
Typical Performance
(s)
4CSD08060 Rev. B
Typical Performance
110
100
90
80
70
60
50
40
30
20
10
0
Power Dissipation (W)
T
C
Case Temperature (
°
C
)
25 50 75 100 125 150 175
Figure 6. Power Derating
CSD08060 Power Derating
0
10
20
30
40
50
60
70
80
90
100
110
25 50 75 100 125 150 175
Case Temperature
Power
Package Dimensions
Package TO-220-2
A
C
E
D
G
H
B
J
L
MN
FP
Q
S
T U
V
W
Y
M in M ax M in M ax
A .395 .410 10.033 10.414
B .235 .255 5.969 6.477
C .102 .112 2.591 2.845
D .337 .337 8.560 8.560
E .590 .610 14.986 15.494
F .149 .153 3.785 3.886
G 1.127 1.147 28.626 29.134
H .530 .550 13.462 13.970
J
L .028 .036 .711 .914
M .045 .055 1.143 1.397
N .195 .205 4.953 5.207
P .170 .180 4.318 4.572
Q .048 .054 1.219 1.371
S 3° 5° 3° 5°
T 3° 5° 3° 5°
U 3° 5° 3° 5°
V .100 .110 2.54 2.794
W .014 .021 .356 .533
X 3° 5° 3° 5°
Y .395 .410 10.033 10.414
Z .130 .150 3.302 3.810
Inc h es
M illim eters
P OS
R 0.010 R 0.254
1 2
Z
PIN 1
PIN 2 CASE
POS Inches Millimeters
Min Max Min Max
A.381 .410 9.677 10.414
B.235 .255 5.969 6.477
C.100 .120 2.540 3.048
D.223 .337 5.664 8.560
E.590 .615 14.986 15.621
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H.500 .550 12.700 13.970
JR 0.197 R 0.197
L .025 .036 .635 .914
M .045 .055 1.143 1.397
N.195 .205 4.953 5.207
P.165 .185 4.191 4.699
Q.048 .054 1.219 1.372
S3° 6° 3° 6°
T3° 6° 3° 6°
U 3° 6° 3° 6°
V.094 .110 2.388 2.794
W .014 .025 .356 .635
X3° 5.5° 3° 5.5°
Y.385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
Dimension L, M, W apply for Solder Dip
Finish
1.
55 CSD08060 Rev. B
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.
Copyright © 2006-2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
VT
RT
Diode Model CSD06060
Vf T = VT + If*RT
VT= 0.975 + (Tj * -1.0*10-3)
RT= 0.09 + (Tj * 0.51*10-3)
Recommended Solder Pad Layout
Part Number Package Marking
CSD08060A TO-220-2 CSD08060
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the
maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006. This part number was
released previously with Sn/Pb solder plating as a standard industry nish. For more information please contact power_sales@cree.com “
TO-220-2
Note: Tj = Diode Junction Temperature In Degrees Celcius
Diode Model
VfT= VT+If*RT
VT= 0.93+(Tj*(-.93*10-3))
RT= 0.058+(Tj*(.57*10-3))