APTGT150A120TG Phase leg Fast Trench + Field Stop IGBT(R) Power Module Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control NTC2 Q1 G1 Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring E1 OUT Q2 G2 E2 G2 E2 VBUS 0/VBUS NTC1 Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant OUT OUT E1 E2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25C Max ratings 1200 220 150 350 20 690 Tj = 125C 300A @ 1150V TC = 25C TC = 80C TC = 25C Unit V A July, 2006 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150A120TG - Rev 1 VBUS VCES = 1200V IC = 150A @ Tc = 80C APTGT150A120TG All ratings @ Tj = 25C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM Min Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 1.7 2.0 5.8 Typ 10.7 0.56 0.48 280 40 420 Max Unit 250 2.1 A 6.5 400 V nA Max Unit nF ns 290 45 520 ns 90 14 mJ 16 Typ Max 1200 Tj = 25C Tj = 125C IF = 150A Tc = 80C Tj = 25C Tj = 125C Tj = 25C 150 1.6 1.6 170 Tj = 125C Tj = 25C 280 15 Tj = 125C Tj = 25C Tj = 125C 29 7 12 di/dt =3000A/s www.microsemi.com Unit V VR=1200V IF = 150A VR = 600V V 75 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 2.2 Fall Time Tf Min 250 500 A A 2.1 V ns C July, 2006 Symbol Characteristic mJ 2-5 APTGT150A120TG - Rev 1 Electrical Characteristics APTGT150A120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R 25 Max Unit k K Min Typ Max 0.18 0.34 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 C/W V 150 125 125 4.7 160 C N.m g July, 2006 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT150A120TG - Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : APTGT150A120TG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 300 300 TJ = 125C 250 TJ=25C VGE=17V 200 200 150 VGE=15V 150 100 100 50 50 0 VGE=9V 0 0 1 2 3 4 0 1 2 VCE (V) VCE (V) 40 30 TJ=125C E (mJ) IC (A) 200 150 20 100 Eon Eoff Er 10 TJ=125C 50 4 VCE = 600V VGE = 15V RG = 2.2 T J = 125C T J=25C 250 3 Energy losses vs Collector Current Transfert Characteristics 300 0 0 5 6 7 8 9 10 11 0 12 50 100 Switching Energy Losses vs Gate Resistance Eon 300 300 250 20 IC (A) 25 250 350 VCE = 600V VGE =15V IC = 150A TJ = 125C 30 200 Reverse Bias Safe Operating Area 40 35 150 IC (A) VGE (V) E (mJ) VGE=13V TJ =125C IC (A) IC (A) 250 Eoff 15 Er 10 200 150 V GE=15V T J=125C RG=2.2 100 50 5 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 16 0 400 800 V CE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 IGBT 0.9 0.7 July, 2006 0.12 0.5 0.08 0.04 0 0.3 0.1 Single Pulse 0.05 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT150A120TG - Rev 1 Thermal Impedance (C/W) 0.2 APTGT150A120TG 50 VCE=600V D=50% RG=2.2 TJ =125C TC=75C ZVS 40 250 200 ZCS 30 Forward Characteristic of diode 300 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 20 TJ=125C 150 100 10 40 TJ=25C 0 0 10 TJ =125C 50 Hard Switching 70 100 130 IC (A) 160 190 0 220 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 Diode 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT150A120TG - Rev 1 July, 2006 rectangular Pulse Duration (Seconds)