April 2017
DocID027989 Rev 4
1/11
This is information on a product in full production.
www.st.com
SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A,
59 mΩ (typ., TJ=150 °C) in an HiP247™ package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Very tight variation of on-resistance vs.
temperature
Very high operating junction temperature
capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Applications
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material allows
designers to use an industry-standard outline
with significantly improved thermal capability.
These features render the device perfectly
suitable for high-efficiency and high power
density applications.
Table 1: Device summary
Order code
Marking
Package
Packaging
SCT50N120
SCT50N120
HiP247™
Tube
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
Contents
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 5
3 Package information ....................................................................... 8
3.1 HiP247™ package information .......................................................... 8
4 Revision history ............................................................................ 10
SCT50N120
Electrical ratings
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1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
1200
V
VGS
Gate-source voltage
-10 to 25
V
ID
Drain current (continuous) at TC = 25 °C
65
A
ID
Drain current (continuous) at TC = 100 °C
50
A
IDM(1)
Drain current (pulsed)
130
A
PTOT
Total dissipation at TC = 25 °C
318
W
Tstg
Storage temperature range
-55 to 200
°C
Tj
Operating junction temperature range
°C
Notes:
(1)Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.55
°C/W
Rthj-amb
Thermal resistance junction-ambient
40
°C/W
Electrical characteristics
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2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDSS
Zero gate voltage
drain current
VDS = 1200 V, VGS = 0 V
1
100
µA
VDS = 1200 V, VGS = 0 V,
TJ = 200 °C
10
µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = -10 to 22 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
1.8
3.0
V
RDS(on)
Static drain-source
on-resistance
VGS = 20 V, ID = 40 A
52
69
mΩ
VGS = 20 V, ID = 40 A,
TJ = 150 °C
59
mΩ
VGS = 20 V, ID = 40 A,
TJ = 200 °C
70
mΩ
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 400 V, f = 1 MHz,
VGS = 0 V
-
1900
-
pF
Coss
Output capacitance
-
170
-
pF
Crss
Reverse transfer
capacitance
-
30
-
pF
Qg
Total gate charge
VDD = 800 V, ID = 40 A,
VGS = 0 to 20 V
-
122
-
nC
Qgs
Gate-source charge
-
19
-
nC
Qgd
Gate-drain charge
-
35
-
nC
Rg
Gate input resistance
f=1 MHz open drain
-
1.9
-
Ω
Table 6: Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
Turn-on switching energy
VDD = 800 V, ID = 40 A
RG= 2.2 Ω, VGS = -5 to 20 V
-
530
-
µJ
Eoff
Turn-off switching energy
-
310
-
µJ
Eon
Turn-on switching energy
VDD = 800 V, ID = 40 A
RG= 2.2 Ω, VGS = -5 to 20 V
TJ= 150 °C
-
670
-
µJ
Eoff
Turn-off switching energy
-
334
-
µJ
Table 7: Reverse SiC diode characteristics
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
VSD
Diode forward voltage
IF = 20 A, VGS = 0 V
-
3.5
-
V
trr
Reverse recovery time
IF = 40 A, di/dt = 2000/ns
VDD = 800 V
-
55
ns
Qrr
Reverse recovery charge
-
230
-
nC
IRRM
Reverse recovery current
-
14
-
A
SCT50N120
Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics (TJ= 25 °C)
Figure 5: Output characteristics (TJ= 150 °C)
Figure 6: Output characteristics (TJ= 200 °C)
Figure 7: Transfer characteristics
Electrical characteristics
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Figure 8: Power dissipation
Figure 9: Gate charge vs gate-source voltage
Figure 10: Capacitance variations
Figure 11: Switching energy vs. drain current
Figure 12: Switching energy vs. junction
temperature
Figure 13: Normalized V(BR)DSS vs. temperature
SCT50N120
Electrical characteristics
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Figure 14: Normalized gate threshold voltage vs.
temperature
Figure 15: Normalized on-resistance vs. temperature
Figure 16: Reverse conduction characteristics
(TJ = -50 °C)
Figure 17: Reverse conduction characteristics
(TJ = 25 °C)
Figure 18: Reverse conduction characteristics (TJ = 150 °C)
Package information
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3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
3.1 HiP247™ package information
Figure 19: HiP247™ package outline
SCT50N120
Package information
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Table 8: HiP247™ package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
Revision history
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4 Revision history
Table 9: Document revision history
Date
Revision
Changes
17-Jun-2015
1
First release
12-May-2016
2
Modified title.
Modified: Table 2: "Absolute maximum ratings", Table 4: "On/off
states", Table 5: "Dynamic", Table 6: "Switching energy (inductive
load)", and Table 7: "Reverse SiC diode characteristics".
Added: Section 4.1: "Electrical characteristics (curves)".
Minor text changes.
23-Jun-2016
3
Document status promoted from preliminary to production data.
03-Apr-2017
4
Modified Table 7: "Reverse SiC diode characteristics"
Modified Figure 7: "Transfer characteristics", Figure 15: "Normalized
on-resistance vs. temperature", Figure 16: "Reverse conduction
characteristics (TJ = -50 °C)", Figure 17: "Reverse conduction
characteristics (TJ = 25 °C)" and Figure 18: "Reverse conduction
characteristics (TJ = 150 °C)"
Updated Section 3: "Package information"
Minor text changes.
SCT50N120
DocID027989 Rev 4
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