2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 60 VQ1000J FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Code ll = Lot Traceability Dual-In-Line N D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 4 11 G2 5 10 G3 S2 6 9 S3 D2 7 8 D3 NC N Top View Plastic: VQ1000J Sidebraze: VQ1000P Document Number: 70226 S-04279--Rev. F, 16-Jul-01 N NC TO-92-18RM (TO-18 Lead Form) D 1 G 2 N S 3 Top View BS170 www.vishay.com 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage--Non-Repetitive Gate-Source Voltage--Continuous Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Symbol 2N7000 2N7002 VQ1000J VQ1000P VDS 60 60 60 60 VGSM "40 "40 "30 VGS "20 "20 "20 "20 ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Total Quad PD RthJA VQ1000J/P BS170 "25 V "20 0.2 0.115 0.225 0.225 0.5 0.13 0.073 0.14 0.14 0.175 0.5 0.8 1 1 0.4 0.2 1.3 1.3 2 0.16 0.08 0.52 0.52 0.8 312.5 625 96 96 62.5 TJ, Tstg Unit 60 A 0.83 W 156 _C/W _C -55 to 150 Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms. SPECIFICATIONS2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000 Parameter Symbol Test Conditions Typa Min Max 2N7002 Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA 70 60 VDS = VGS, ID = 1 mA 2.1 0.8 VDS = VGS, ID = 0.25 mA 2.0 IDSS V 1 VDS = 0 V, VGS = "15 V "100 Drain-Source On-Resistanceb ID(on) rDS(on) VDS = 60 V, VGS = 0 V 1 0.35 VDS = 7.5 V, VGS = 10 V 1 VGS = 4.5 V, ID = 0.075 A 4.5 VGS = 5 V, ID = 0.05 A 3.2 7.5 5.8 13.5 VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.2 A Common Source Output Conductanceb gos VDS = 5 V, ID = 0.05 A m mA 500 VDS = 10 V, VGS = 4.5 V TC = 125_C nA 1 1000 TC = 125_C TC = 125_C On-State Drain Currentb 2.5 "10 VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current 60 3 0.075 A 0.5 5.3 2.4 5 4.4 9 100 W 7.5 13.5 80 mS 0.5 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss www.vishay.com 11-2 VDS = 25 V, VGS = 0 V f = 1 MHz 22 60 50 11 25 25 2 5 5 pF Document Number: 70226 S-04279--Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix SPECIFICATIONS2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000 2N7002 Symbol Test Conditions Typa Turn-On Time tON 10 tOFF VDD = 15 V, RL = 25 W ID ^0.5 A, VGEN = 10 V, RG = 25 W 7 Turn-Off Time 7 10 Turn-On Time tON 7 20 Turn-Off Time tOFF VDD = 30 V, RL = 150 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 11 20 Parameter Min Max Min Max Unit Switchingd ns SPECIFICATIONSVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED) Limits VQ1000J/P Parameter Typa Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = 100 mA 70 60 VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 BS170 Max Min 2.5 0.8 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS = 0 V, VGS = "10 V Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb IDSS VDS = 25 V, VGS = 0 V 0.5 500 10 VDS = 10 V, VGS = 10 V 1 VGS = 5 V, ID = 0.2 A 4 VGS = 10 V, ID = 0.2 A 2.3 VGS = 10 V, ID = 0.3 A 2.3 5.5 4.2 7.6 TJ = 125_C gfs Common Source Output Conductanceb gos mA m 0.5 A 7.5 5 VDS = 10 V, ID = 0.2 A W 100 VDS = 10 V, ID = 0.5 A VDS =5 V, ID = 0.05 A V nA "10 VDS = 60 V, VGS = 0 V rDS(on) Forward Transconductanceb "500 VDS = 0 V, VGS = "15 V VDS = 48 V, VGS = 0 V, TJ = 125_C ID(on) 3 "100 TJ = 125_C IGSS 60 100 mS 0.5 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 22 60 11 25 2 5 VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W 7 10 7 10 VDD = 25 V, RL = 125 W ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 7 10 7 10 VDS =25 V, VGS = 0 V f = 1 MHz 60 pF Switchingd Turn-On Time tON Turn-Off Time tOFF Turn-On Time tON Turn-Off Time tOFF Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature. Document Number: 70226 S-04279--Rev. F, 16-Jul-01 ns VNBF06 www.vishay.com 11-3 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 0.8 0.8 6V ID - Drain Current (A) ID - Drain Current (A) TJ = -55_C 5.5 V 0.6 5V 0.4 4.5 V 4V 0.2 3.5 V 3V 0 1 2 3 4 5 125_C 0.4 0.2 2.5 V 2, 1 V 0.0 25_C 0.6 0.0 6 0 1 2 VDS - Drain-to-Source Voltage (V) 3 5 6 7 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 7 60 VGS = 0 V f = 1 MHz 6 50 rDS @ 5 V = VGS 5 C - Capacitance (pF) rDS(on) - On-Resistance ( ) 4 4 3 rDS @ 10 V = VGS 2 40 30 Ciss 20 Coss 10 1 Crss 0 0.0 0 0.2 0.4 0.6 0.8 0 1.0 5 ID - Drain Current (A) 15 20 25 30 35 VDS - Drain-to-Source Voltage (V) Gate Charge 20 10 2.0 On-Resistance vs. Junction Temperature 12 VDS = 30 V 8 4 0 0 400 800 1200 1600 Qg - Total Gate Charge (pC) www.vishay.com 11-4 VGS = 10 V, rDS @ 0.5 A 16 rDS(on) - On-Resistance ( ) (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.5 A 2000 2400 1.5 1.0 VGS = 5 V, rDS @ 0.05 A 0.5 0.0 -55 -30 -5 20 45 70 95 120 145 TJ - Junction Temperature (_C) Document Number: 70226 S-04279--Rev. F, 16-Jul-01 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.000 rDS(on) - On-Resistance ( ) 6 IS - Source Current (A) TJ = 125_C 0.100 TJ = 25_C 0.010 5 ID = 50 mA 4 500 mA 3 2 1 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.50 ID = 250 mA VGS(th) - Variance (V) 0.25 -0.00 -0.25 -0.50 -0.75 -50 -25 0 25 50 75 100 125 150 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) Document Number: 70226 S-04279--Rev. F, 16-Jul-01 www.vishay.com 11-5