2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01 www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
2N7000 5 @ VGS = 10 V 0.8 to 3 0.2
2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115
VQ1000J 60 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
BS170 5 @ VGS = 10 V 0.8 to 3 0.5
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 2.5 W
DLow Threshold: 2.1 V
DLow Input Capacitance: 22 pF
DFast Switching Speed: 7 ns
DLow Input and Output Leakage
DLow Offset Voltage
DLow-Voltage Operation
DEasily Driven Without Buffer
DHigh-Speed Circuits
DLow Error Voltage
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Plastic: VQ1000J
Sidebraze: VQ1000P
Top View
TO-92-18RM
(TO-18 Lead Form)
D
S
G
1
2
3
2N7000
BS170
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D1D4
S1S4
G1G4
NC NC
G2G3
S2S3
D2D3
N
N
N
N
Marking Code: 72wll
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot T raceability
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70226
S-04279—Rev. F, 16-Jul-01
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N7000 2N7002 VQ1000J VQ1000P VQ1000J/P BS170 Unit
Drain-Source Voltage VDS 60 60 60 60 60
Gate-Source Voltage—Non-Repetitive VGSM "40 "40 "30 "25 V
Gate-Source Voltage—Continuous VGS "20 "20 "20 "20 "20
Continuous Drain Current TA= 25_C0.2 0.115 0.225 0.225 0.5
Continuous Drain Current
(TJ = 150_C) TA= 100_CID0.13 0.073 0.14 0.14 0.175 A
Pulsed Drain CurrentaIDM 0.5 0.8 1 1
TA= 25_C0.4 0.2 1.3 1.3 2 0.83
Power Dissipation TA= 100_CPD0.16 0.08 0.52 0.52 0.8 W
Thermal Resistance, Junction-to-Ambient RthJA 312.5 625 96 96 62.5 156 _C/W
Operating Junction and
Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA70 60 60
VDS = VGS, ID = 1 mA 2.1 0.8 3 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 2.0 1 2.5
VDS = 0 V, VGS = "15 V "10
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 48 V, VGS = 0 V 1
TC = 125_C1000
m
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1mA
TC = 125_C500
VDS = 10 V, VGS = 4.5 V 0.35 0.075
On-State Drain CurrentbID(on) VDS = 7.5 V, VGS = 10 V 1 0.5 A
VGS = 4.5 V, ID = 0.075 A 4.5 5.3
VGS = 5 V, ID = 0.05 A 3.2 7.5
Drain-Source On-ResistancebrDS(on) TC = 125_C5.8 13.5 W
DS(on) VGS = 10 V, ID = 0.5 A 2.4 5 7.5
TJ = 125_C4.4 9 13.5
Forward T ransconductancebgfs VDS = 10 V, ID = 0.2 A 100 80
Common Source Output Conductancebgos VDS = 5 V, ID = 0.05 A 0.5 mS
Dynamic
Input Capacitance Ciss 22 60 50
Output Capacitance Coss VDS = 25 V, VGS = 0 V
f = 1 MHz 11 25 25 pF
Reverse Transfer Capacitance Crss f = 1 MHz 2 5 5
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01 www.vishay.com
11-3
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Switchingd
Turn-On T ime tON V
DD
= 15 V, R
L
= 25 W7 10
Turn-Off Time tOFF
VDD = 15 V, RL = 25
W
ID ^0.5 A, VGEN = 10 V, RG = 25 W7 10
T urn-On Time tON VDD = 30 V, RL = 150 W7 20 ns
Turn-Off Time tOFF
VDD = 30 V, RL = 150
W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W11 20
SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P BS170
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA70 60 60
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3 V
VDS = 0 V, VGS = "10 V "100
Gate-Body Leakage IGSS TJ = 125_C"500 nA
GSS VDS = 0 V, VGS = "15 V "10
VDS = 25 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C500 mA
DSS VDS = 60 V, VGS = 0 V 10
m
On-State Drain CurrentbID(on) VDS = 10 V, VGS = 10 V 1 0.5 A
VGS = 5 V, ID = 0.2 A 4 7.5
VGS = 10 V, ID = 0.2 A 2.3 5
W
Drain-Source On-ResistancebrDS(on) VGS = 10 V, ID = 0.3 A 2.3 5.5 W
TJ = 125_C4.2 7.6
VDS = 10 V, ID = 0.2 A 100
Forward T ransconductancebgfs VDS = 10 V, ID = 0.5 A 100 mS
Common Source Output Conductancebgos VDS =5 V, ID = 0.05 A 0.5
Dynamic
Input Capacitance Ciss 22 60 60
Output Capacitance Coss VDS =25 V, VGS = 0 V
f = 1 MHz 11 25 pF
Reverse Transfer Capacitance Crss f = 1 MHz 2 5
Switchingd
T urn-On Time tON V
DD
= 15 V, R
L
= 23 W7 10
Turn-Off Time tOFF
VDD = 15 V, RL = 23
W
ID ^ 0.6 A, VGEN = 10 V, RG = 25 W7 10
T urn-On Time tON VDD = 25 V, RL = 125 W7 10 ns
Turn-Off Time tOFF
VDD = 25 V, RL = 125
W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W7 10
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBF06
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-4 Document Number: 70226
S-04279—Rev. F, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
CapacitanceOn-Resistance vs. Drain Current
0.0
0.2
0.4
0.6
0.8
1.0
0123456 0.0
0.2
0.4
0.6
0.8
1.0
012345678
Output Characteristics Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS = 10, 9, 8, 7 V 6.5 V
VGS – Gate-to-Source Voltage (V)
TJ = –55_C25_C
125_C
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V 2.5 V
2, 1 V
0
4
8
12
16
20
0 400 800 1200 1600 2000 2400 0.0
0.5
1.0
1.5
2.0
–55 –30 –5 20 45 70 95 120 145
0
1
2
3
4
5
6
7
0.0 0.2 0.4 0.6 0.8 1.0 0
10
20
30
40
50
60
0 5 10 15 20 25 30 35
Gate Charge
Qg – Total Gate Charge (pC)
VDS – Drain-to-Source Voltage (V)
Crss
Coss
Ciss
ID = 0.5 A
ID – Drain Current (A)
On-Resistance vs. Junction Temperature
VGS = 10 V, rDS @ 0.5 A
TJ – Junction Temperature (_C)
rDS @ 10 V = VGS
rDS @ 5 V = VGS
VGS = 5 V, rDS @ 0.05 A
VGS = 0 V
f = 1 MHz
VDS = 30 V
ID – Drain Current (A)
ID – Drain Current (A)
rDS(on) – On-Resistance ( Ω )
C – Capacitance (pF)
VGS – Gate-to-Source Voltage (V)
rDS(on) – On-Resistance ( Ω )
(Normalized)
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01 www.vishay.com
11-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0
1
2
3
4
5
6
0 2 4 6 8 101214161820
0.001
0.010
0.100
1.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
500 mA
ID = 50 mA
TJ = 25_C
TJ = 125_C
Threshold Voltage
–0.75
–0.50
–0.25
–0.00
0.25
0.50
–50 –25 0 25 50 75 100 125 150
ID = 250 mA
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1 1 10010 1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
Normalized Effective Transient
Thermal Impedance
t1 – Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
Notes:
PDM
t2
IS – Source Current (A)
rDS(on) – On-Resistance ( Ω )
VGS(th) – Variance (V)
