DCR820SG64 - Dynex Semiconductor - Datasheet.Directory

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DCR820SG

www.dynexsemi.com

FEATURES

■Double Side Cooling

■High Surge Capability

APPLICATIONS

■High Power Drives

■High Voltage Power Supplies

■DC Motor Control

■Welding

■Battery Chargers

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the

Voltage Ratings selection table.

For example:

DCR820SG62

Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating

to your order.

KEY PARAMETERS

VDRM 6500V

IT(AV) 387A

ITSM 6000A

dVdt* 1000V/µs

dI/dt 100A/µs

*Higher dV/dt selections available

DCR820SG

Phase Control Thyristor

Supersedes October 2000 version, DS4214-5.1 DS4214-6.0 July 2001

6500

6400

6300

6200

6100

6000

DCR820SG65

DCR820SG64

DCR820SG63

DCR820SG62

DCR820SG61

DCR820SG60

Conditions

Tvj = 0˚ to 125˚C,

IDRM = IRRM = 50mA,

VDRM, VRRM tp = 10ms,

VDSM & VRSM =

VDRM & VRRM + 100V

Respectively

Lower voltage grades available.

Type Number Repetitive Peak

Voltages

VDRM VRRM

Outline type code: G.

See Package Details for further information.

Fig. 1 Package outline

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DCR820SG

CURRENT RATINGS

Tcase = 80˚C unless stated otherwise

Symbol Parameter Conditions

Double Side Cooled

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

Single Side Cooled (Anode side)

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

UnitsMax.

Half wave resistive load 310 A

- 485 A

- 447 A

Half wave resistive load 204 A

- 321 A

- 279 A

CURRENT RATINGS

Tcase = 60˚C unless stated otherwise

Symbol Parameter Conditions

Double Side Cooled

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

Single Side Cooled (Anode side)

IT(AV) Mean on-state current

IT(RMS) RMS value

ITContinuous (direct) on-state current

UnitsMax.

Half wave resistive load 387 A

- 608 A

- 567 A

Half wave resistive load 260 A

- 408 A

- 357 A

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DCR820SG

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SURGE RATINGS

Conditions

10ms half sine; Tcase = 125oC

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 125oC

VR = 0

Max. Units

Symbol Parameter

ITSM Surge (non-repetitive) on-state current

I2tI

2t for fusing

ITSM Surge (non-repetitive) on-state current

I2tI2t for fusing 180 x 103A2s

6.0 kA

115 x 103A2s

4.8 kA

THERMAL AND MECHANICAL DATA

Conditions Min. Max. Units

oC/W- 0.064Anode dc

Clamping force 12.0kN

with mounting compound

Thermal resistance - case to heatsink

Rth(c-h)

0.008

Double side -

125 oC

Tvj Virtual junction temperature

Tstg Storage temperature range

Reverse (blocking)

Single side

Thermal resistance - junction to case

Rth(j-c) Single side cooled

Symbol Parameter

Clamping force 10.8 13.2 kN

–55 150 oC

On-state (conducting) - 135 oC

- 0.016 oC/W

oC/W

Cathode dc - 0.064 oC/W

Double side cooled - 0.032 oC/W

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DCR820SG

GATE TRIGGER CHARACTERISTICS AND RATINGS

VDRM = 5V, Tcase = 25oC

ConditionsParameterSymbol

VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC

IGT Gate trigger current

VGD Gate non-trigger voltage At VDRM Tcase = 125oC

VFGM Peak forward gate voltage Anode positive with respect to cathode

VFGN Peak forward gate voltage Anode negative with respect to cathode

VRGM Peak reverse gate voltage

IFGM Peak forward gate current Anode positive with respect to cathode

PGM Peak gate power

See Fig.8/9 Gate characteristics curves and table

PG(AV) Mean gate power

- 3.0 V

- 300 mA

- 0.25 V

-30V

- 0.25 V

-5V

-10A

- 100 W

-5W

Typ. Max. Units

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions

IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC

From 67% VDRM to 1000A,

Gate source 10V, 5Ω

tr ≤ 0.5µs. Tj = 125oC.

dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

Min. Max. Units

-50mA

- 1000 V/µs

Repetitive 50Hz -50A/µs

Non-repetitive - 100 A/µs

Rate of rise of on-state current

dI/dt

VT(TO) Threshold voltage At Tvj = 125oC

rTOn-state slope resistance At Tvj = 125oC

tgd Delay time

ILLatching current Tj = 25oC, VD = 20V.

IHHolding current Tj = 25oC, VD = 5V, IT = 5A, ITM = 500A

1.6-V

- 3.5 mΩ

- 3.3 µs

VD = 67% VDRM, Gate source 20V, 10Ω

Rise time 0.5µs, Tj = 25oC

-1A

30 120 mA

IT = 500A, tp = 1ms, Tj = 125˚C,

VRM = 100V, dIRR/dt = 10A/µs,

dVDR/dt = 25V/µs to 3000V µs1200500Turn-off timetq

QSStored charge - triangular approximation

through IRR and 25% IRR IT = 320A, -dIT/dt = 6A/µs 600 1500 µC

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DCR820SG

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CURVES

VTM Equation:-

VTM = A + Bln (IT) + C.IT+D.√IT

Where A = -0.759775

B = 0.639225

C = 0.004376

D = -0.092153

these values are valid for Tj = 125˚C for IT 100A to 1500A

Fig.2 Maximum (limit) on-state characteristics Fig.3 Maximum (limit) on-state characteristics

Instantaneous on-state voltage, V

- (V)

Instantaneous on-state current, I

- (A)

1.0 2.0 3.0 4.0 5.0 6.0 7.0

250

500

750

1000

1250

1500 T

= 125˚C

Instantaneous on-state voltage, V

- (V)

Instantaneous on-state current, I

- (A)

100

200

300

400

500

600

11.5

2.0 2.5 3 3.5 4

= 125˚C

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DCR820SG

Fig.4 Sine wave power dissipation curves Fig.5 Sine wave power dissipation curves

Fig.6 Square wave power dissipation curves Fig.7 Square wave power dissipation curves

Power loss - (W)

200

400

600

800

1000

1200

1400

1600

1800

2000

Mean on-state current, I

T(AV)

- (A)

0 50 100 150 200 250 300 350 400

180˚

120˚

90˚

60˚

30˚

15˚

Conduction angle

Mean on-state current, I

T(AV)

- (A)

Power loss - (W)

180˚

120˚

90˚

60˚

30˚

15˚

100

200

300

400

500

600

700

800

0 50 100 150 200 250

Conduction angle

Mean on-state current, IT(AV) - (A)

Power loss - (W)

D.C.

180˚

120˚

90˚

60˚

30˚

0 100 200 300 400 500 600

200

400

600

800

1000

1200

1400

1600

1800

2000

Conduction angle

Mean on-state current, IT(AV) - (A)

Power loss (W)

D.C.

180˚

120˚

90˚

60˚

30˚

100

200

300

400

500

600

700

800

0 50 100 150 200 250 300 350

Conduction angle

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DCR820SG

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Fig.8 Gate characteristics

Fig.9 Gate characteristics

Gate trigger current, I

- (A)

Gate trigger voltage, V

- (V)

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

= 125˚C

= 25˚C

= -40˚C

Preferred gate drive area

Upper limit

Lower limit

Pulse Width

µs

100

200

500

1000

10000

150

100

150

100

400

150

125

100

Frequency Hz

Table gives pulse power P

in Watts

Gate trigger current, IGT - (A)

Upper Limit

Lower Limit

10W

20W

50W

100W

Gate trigger voltage, VGT - (V)

012345678910

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DCR820SG

Fig.10 Stored charge

Fig.12 Surge (non-repetitive) on-state current vs time

(with 50% VRRM @ Tcase = 125˚C) Fig.13 Maximum (limit) transient thermal impedance

- junction to case

Fig.11 Reverse recovery current

10000

1000

100

Total stored charge, Q

RA3

- (µC)

0.1 1.0 10

Rate of decay of on-state current, dI/dt - (A/µs) 100

RA3

dI/dt

Max

Min

Conditions:

= 125˚C

= 320A

= 100V

25% I

1000

100

Peak reverse recovery current, I

- (A)

0.1 1.0 10

Rate of decay of on-state current, dI/dt - (A/µs) 100

Max

Min

Conditions:

= 125˚C

= 320A

= 100V

110510150

Cycles at 50Hzms Duration

7.5

Peak half sinewave on-state current - (kA)

12.5

0.05

I2t value for fusing - (A2s x 106)

0.1

2.5

I2t

0.1

0.01

0.001

Thermal impedance - junction to case, Z

th(j-c)

- (˚C/W)

0.001 0.01 0.1 1.0 10

Time - (s)

Anode side cooled

Double side

cooled

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Effective thermal resistance

Junction to case ˚C/W

Double side

0.032

0.034

0.044

0.057

Single side

0.064

0.066

0.076

0.089

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DCR820SG

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Hole Ø3.6x2.0 deep (in both electrodes)

Ø34 nom

27.0

25.4

Ø1.5

Cathode

Gate

Anode

Ø34 nom

Ø58.5 max

Cathode tab

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless

stated otherwise. DO NOT SCALE.

Nominal weight: 250g

Clamping force: 12kN ±10%

Lead lenght: 420mm

Lead terminal connector: M4 ring

Package outline type code: G

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DCR820SG

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,

and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current

capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The

Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our

customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution

(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded

clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.

Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance

or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer

Services.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

SALES OFFICES

Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33

North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (949) 733-3005. Fax: (949) 733-2986.

UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide.

TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.

Lincolnshire. LN6 3LF. United Kingdom.

Tel: 00-44-(0)1522-500500

Fax: 00-44-(0)1522-500550

DYNEX POWER INC.

99 Bank Street, Suite 410,

Ottawa, Ontario, Canada, K1P 6B9

Tel: 613.723.7035

Fax: 613.723.1518

Toll Free: 1.888.33.DYNEX (39639)

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves

the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such

methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication

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http://www.dynexsemi.com

e-mail: power_solutions@dynexsemi.com

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.

Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.

Advance Information: The product design is complete and final characterisation for volume production is well in hand.

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