IPP030N10N3 G OptiMOSTM3 Power-Transistor IPI030N10N3 G Product Summary Features VDS * N-channel, normal level 100 RDS(on),max * Excellent gate charge x R DS(on) product (FOM) V 3 ID mW 100 A * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G Package PG-TO220-3 PG-TO262-3 Marking 030N10N 030N10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C2) 100 T C=100 C 100 Unit A Pulsed drain current2) I D,pulse T C=25 C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 W 1000 mJ Gate source voltage V GS 20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... 175 C T C=25 C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.1 page 1 2011-07-18 IPP030N10N3 G Parameter IPI030N10N3 G Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area3) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=275 A 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 2.6 3 mW V GS=6 V, I D=50 A - 3.1 4.8 - 1.9 - W 94 188 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2011-07-18 IPP030N10N3 G Parameter IPI030N10N3 G Values Symbol Conditions Unit min. typ. max. - 11100 14800 pF - 1940 2580 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 69 - Turn-on delay time t d(on) - 34 - Rise time tr - 58 - Turn-off delay time t d(off) - 84 - Fall time tf - 28 - Gate to source charge Q gs - 49 - Gate to drain charge Q gd - 28 - Switching charge Q sw - 43 - Gate charge total Qg - 155 206 Gate plateau voltage V plateau - 4.4 - Output charge Q oss - 205 273 nC - - 100 A - - 400 - 1 1.2 V - 86 - ns - 232 - nC V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=100 A, R G=1.6 W ns Gate Charge Characteristics4) V DD=50 V, I D=100 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=50 V, I F=I S , di F/dt =100 A/s See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2011-07-18 IPP030N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 350 IPI030N10N3 G 120 300 100 250 200 ID [A] Ptot [W] 80 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 TC [C] 100 150 200 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 limited by on-state resistance 1 s 10 s 100 s 102 0.5 ZthJC [K/W] ID [A] 1 ms 10 ms 101 DC 0.2 10-1 0.1 0.05 100 0.02 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.1 10-5 page 4 2011-07-18 IPP030N10N3 G IPI030N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 300 6 10 V 6V 250 5 7.5 V 4.5 V 5.5 V 5V 4 RDS(on) [mW] ID [A] 200 150 4.5 V 100 5V 6V 3 10 V 2 50 1 0 0 0 7.5 V 1 2 0 40 VDS [V] 80 120 160 120 160 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 300 240 250 200 200 160 gfs [S] ID [A] parameter: T j 150 100 120 80 25 C 50 40 175 C 0 0 0 2 4 6 VGS [V] Rev. 2.1 0 40 80 ID [A] page 5 2011-07-18 IPP030N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPI030N10N3 G parameter: I D 7 4 6 3.5 3 2750 A 2.5 4 VGS(th) [V] RDS(on) [mW] 5 98 % typ 3 275 A 2 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 Ciss 175 C, 98% 104 25 C 102 IF [A] C [pF] Coss 103 175 C 25 C, 98% 101 Crss 102 101 100 0 20 40 60 80 VDS [V] Rev. 2.1 0 0.5 1 1.5 2 VSD [V] page 6 2011-07-18 IPP030N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 IPI030N10N3 G 10 8 80 V 100 50 V 6 VGS [V] IAS [A] 25 C 100 C 150 C 20 V 4 10 2 1 0 1 10 100 1000 0 40 tAV [s] 80 120 160 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg VBR(DSS) [V] 105 100 V g s(th) 95 Q g (th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev. 2.1 page 7 2011-07-18 IPP030N10N3 G IPI030N10N3 G PG-TO220-3: Outline Rev. 2.1 page 8 2011-07-18 IPP030N10N3 G IPI030N10N3 G PG-TO262-3 Rev. 2.1 page 9 2011-07-18 IPP030N10N3 G IPI030N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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