Numerical Index 2N2230-2N2330 z|> MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS S/F = || REPLACE- | PAGE Py (El tN! Vee | Vee |= ee @ Ie Vogisan @ Ic B/ _ je TYPE = 3 MENT | NUMBER USE & J cB 15 2 {SAT} al hy 5 - lB =\= @ 25C | BS) C | (volts) | (volts) |S | (min) (max) 5) (volts) = 3 5/3 2N2230 S [N LPA 150W} C} 150 590 501 Vi 350 9.0A 3.5 9.0A} 100 E 4.0K] E 2N2231 Ss |[N LPA L50W] C] 150 100 100} V] 350 9.0A 3.5 9.0Aj 100 E 4.0K] E 2N2232 S {N LPA 150W, Cl 150 150 150) Vy 350 9.0A 3.5 9.0A} 100 E 4.0K] E 2N2233 S |N LPA 150W] C] 150 200 200) V} 350 9.0A 3.5 9.0A} 100 E 4.0K] E 2N2234 5S |N PHS 12.5W} C} 150 40 20} 0 15 60 100M} 0.25 100M 50M| T 2N2235 S|N PHS 12.5W} Cc] 150 40 20) 0 40] 125 100M] 0.25 LOOM LOOM] T 2N2236 S [N HSS 575M| Al 150 40 20, 0 15 60 100M) 0.25 100M 5OM! T 2N2237 S tN HSS 575M} A! 150 40 20} O 40} 125 100M] 0.25 LOOM 2N2238 GIP RFA G.3W!] Al 106 30 36} S 10 10M 25 E 400M] T 2N2239 8 |N | 2N3766 77-142 AFA 1.0W;] A] 156 60 50); R 301 200 200M 3.0 200M 2N2240 S |N HSA Q.6WL Af 200 25 201 O 40t 100 1,.0M 1.0 50M 50M) T 2N2241 S |N HSA 0.6W] A} 200 25 20] Of 100} 200 1.0M 1.0 50M 50M} T 2N2242 SIN 8-120 HSA 360M} A] 200 40 15] 0 40] 120 LOM 0.7 1G0M 250M} T 2N2243 S [N (2N2219 8-108 HSS O.8W] Af 200 120 80] 0 40! 120) O.15A] 0.35 0.15A 50M] T 2N2243A4 (S {N HSS 0.8W) A} 200 120 80; 0 40} 120) 0.154) 0.25 0,154 50M) T 2N2244 S |N | 2N835 8-54 AFA 0.5W] Al 200 20 20] O; 5,0 15 2.0% 0.2 1.0M 40 E 60M/ T 2N2245 S |N |2N835 8-54 AFA 0.5W] A} 200 20 20] 0 10 30 2.0% 0.2 1, 0M 80 E 60M{ T 2N2246 S |N | 2N835 8-54 AFA 0.5W) Al 200 20 20] O} 5.0 15 2.0% 0.2 1.CM 40 E 60M| T 2N2247 S |N |2N834 8-54 AFA 0.5Wr Al 200 45 45| OQ} 5.0 15 2.0% Q.2 L.om) 40 E 60M) T 2N2248 S |N |2N834 8-54 AFA 0.5W] A] 200 45 45{ 0 16 30 2.0% 0.2 1.0M 80 E 60M] T 2N2249 3S YN ]2N834 8-54 AFA Q.5W) Al 200 45 451 0 20 60 2.0% 0.2 1,OM] 150 E 60M) T 2N2250 S |N | 2N835 8-54 LNA G.5W] A] 200 25 20] Of 5.0 15 2.0% 0.2 1.0M 40 E 60M} T 2N2251 S [N (2N835 8-54 LNA 0.5W| At 200 25 20| 0 10 30 2.0% 0.2 1.0M 80 E 60M! T 2N2252 S [N |2N834 8-54 LNA 0.5Wy Af 200 25 20; 0 20 60 2.0% 0.2 1,0M| 150 E 60M; T 2N2253 S |N }2N834 8-54 LNA 0.5W] A! 200 45 50/ Of 5.0 15 2.0% 0.2 1. 0M 40 E 60M] T 2N2254 S |N [2N834 8-54 LNA 0.5W}] A} 200 45 50} oO 10 30 2.0% 0.2 1.0M 80 E 60M] T 2N2255 S |N |2N834 8-54 LNA O.5W] Al 200 45 50) 0 20 60 2.0% 0.2 L.OM} 150 E 60M) T 2N2256 Ss |N 8-122 HNS 300M] Aj 175 7.0 7,0) S$ 7 10M 2N2257 S [N 8-122 HNS 300M] Al 175 7.0 7.0] S 40 10M 2N2258 G TP 8-122 HNS 150M| A| 160 7.0 7.01 S 17 LOM 2N2259 G |P 8-122 HNS 150M, A{ 100 7.0 7.01 S 4a 10M 2N2260 thru Thyristors, see Table on Page 1-154 2N2262 2N2 266 G |P [(2N2145 7-78 PMS 50W1 J} 125 100 55 40{ 120 500M! 0.75 5.0A 200K{ T 2N2267 G |P {2N2145 7-78 PMS SOW] J] 125 120 55 40; 120 500M] 0.75 5.0A 200K] T G }P |2N2145 7-78 PMS 50W] J} 125 100 55 40] 120 500M] 0.75 5.0A 200K] T G |P 12N2145 7-78 PMS 50W] J] 125 120 55 40] 120 500M} 0.75 5.0A 200K] T S )N $2N2219 8-108 AFA 5.0W} Ci 200 60 45] 0 30 1,0M 0.9 150M 50 E Pp AFC 0.25w] A} 100 20 15, R 50] 160 35M 10K] E 5S IN HSs 360M| A] 200 40 20] R 80} 240 LOM 0.7 200M] 3.0 E GIP 9-27 RFA 100M} A] 100 25 15] 0 20] 150 1.0M S$ |P CHP 150M}, A} 146 25 25) 0 10 5.0M 6.0M] 7 8S |P CHP 150M} Af 140 25 25, 0 10 5.0M 6.0M} T |P CHP 150M| A] 140 15 10] 0 10 5.0M 6.0M; T 5 [P CHP 150M] A} 140 15 10] 0 10 5.0M 6.0M] T 2N2278 S$ |P CHP 15soMt Al 140 415 154 0 7.6M) T 2N2279 5 7P CHP 150M| Ay 140 15 15] 0 7.6M] T 2n2280 [8 |P cup | 150M] AJ 140f 10} 4.0] 0 0.1} 5.0m Tom] 2n2281 |S |P cHP |} 150M] A] 140] 10) 6.0] 0 0.1 | 5.0m 16M] T 2N2282 G YP HPA 5.0Ww} Cy} 110 60 30} 0 is 3.0A 0.4 1.04 40 E 20M} T 2N2283 G IP HPA 5.0W] Cc] 110 100 60] 0 15 3.0A 0.4 1.0A 40 E 20M} T 2N2.284 G [P HPA 5.0W] C} 110 200 100] 0 15 3.0A 0.4 1.04 40 E 20M; T 2N2285 G |P LPA 1locw; Cj} 110 60 30; 0 35] 140 10A] 0.65 25A 0,6M/ T 2N22.86 Ge LPA 1o0w) Cc} 110 100 60) 0 35} 140 LOA] 0.65 258 0.6m} T 2N2287 G IP LPA LooWw}] Cc] 110 120 80] 0 35| 140 10A} 0.65 254 0.6M] T 2N2288 G |P {2N2526 7-87 LPA 60W}) C} 110 40 40] R 20 60 5.0A 1.0 5.0A 25 E] O.45My T 2N2289 G |P [2N2526 7-87 LPA 60Ww}] Cl 110 80 801 R 20 60 5.0A 1.0 5.04 25 E|] 0.45M| T 2N2290 G {P |2N2526 7-87 LPA 6OW| Cl LLO 120 120) R 20 690 5.0A 1.0 5.04 25 E) 0.45M) T 2N2291 G IP LPA 60W}] C] 110 40 30] 0 50} 120 5.04 1.0 5.0A 50 E}O.45M} T 2N2292 G |P LPA 60W} C} 110 80 70; 0 50] 120 5.0A 1.0 5.0A 50 E|] 0.45Mj T 2N2293 G IP LPA 60W}] C] 110 120 70| 0 50] 120 5.0A 1.0 5.0A 50 E] 0.45M|[ T 282294 G TP PMS 7OW}] C}] 110 40 30| 0 50} 120 5.0A 1.0 5.0A 50 E| 0.45M[ T 2N2295 GP PMS 7OW, C{ 110 80 50; 0 50] 120 5.04 1.0 5.0A 50 E] 0.45M] T 2N2296 G IP PMS 7OwW} C} 110 120 7O} O 50} 120 5.0A 1.9 5.0A 50 E{ 0.45M] fT 2N2297 S [N [2N3252 8-214 RFA 800M] A} 200 80 35] 0 40; 120 150M 0.2 150M 60M| T 2N2303 S }P J2N2801 8-161 RFA 600M) A} 175 50 50) RK 739) 200 150M 1.5 150M 75 E 60M{ T 2N2304 S JN |[2N3766 7-142 LPA 25w} Cf 200 60 60] V 20 80 300M 0.9 300M 2N2305 S iN LPA 75W| C] 200 60 60] V 15 60 800M 1.2 600M 2N2306 S IN PHS i3w] C] 175 75 50] 0 12 75} 0.35A 2.0 1.0A 175M{ T 2N2307 Unijunetion Transistor, see Table on Page 1-174 2N2308 s|N PA 25w{ Cf 200 100 80] 0 20 60 1.0A 1.0 1.0A 15 E 30K 2N2309 S {N LNA 600M; A} zO0 30 30] 0 25] 125 0.2M 40 E 2N2310 S |N AFA 350M} Aj 200 60 60} O 12 36 200M 5.0 200M QN2341 Ss 4N AFA 350M) A} 200 100 100) 0 12 36 200M 5.0 200M 2N2312 S {N AFA 350M; A] 200 60 60] 0 30 90 200M 5.0 200M 2N2313 S |N AFA 350M] A] 200 100 100; 0 30 90 200M 5.0 200M 2N2314 S |N AFA 350M} Aj 200 60 40] R 20 60 150M 5.0 150M 15 E 40M| T 2N2315 S JN AFA 350M} A} 200 60 40) R 4a} 120 150M Ls 150M 25 E 50M) T 2N2316 S [N AFA 350M; AJ] 200 120 80] R 40] 120 150M 5.0 150M 50 E 50M] T 2N2317 S JN AFA 350M} AJ] 200 75 50, R 40] 120 150M 1.5 150M 30 E 60M] T 2N2318 S |N |[2N834 -54 HSA 360M| Al 200 30 25) 8 15 O.1M] 0.35 20M 300M} T 2N2319 S |N 12N834 8-54 HSA 300M{ Al 200 30 254 5 15 O.1M! 0.35 20M 300M) T ono S |N [2N834 8-54 HSA 600M] A| 200 30 25, S 15 O.1M] 0.35 20M. 300M} T 2N2322 thru Thyristors, sce Table on Page 1-154 2N2329 2n2330 fs |N | [8-125 | cHP | 0.sw] a] 150 30 20] o] 50 10M 100M] T 1-127- Switching and General Purpose Transistors an/ 22 (SILICON) Veto = 35-45 V 2N1132,A,B (] Ic = 500-600 mA 2N1132 USN/JAN + = 900 MHs 2N2303 T= 200 MHz Typ PNP silicon annular transistors for medium-current switching applications. CASE 22 CASE 31 (TO-18) (TO-5) 2N722 2N1132, A 2N2303 Collector connected to case MAXIMUM RATINGS Rating Symbol Valve Unit Collector-Base Voltage VcoB Vde 2N722, 2N1132, 2N2303 50 2N1132A 60 2N1132B 70 Collector-Emitter Voltage VCEO Vde 2N722, 2N1132, 2N2303 35 2N1132A 40 2N1132B 45 Emitter-Base Voltage VEB Vde 2N722, 2N1132, 2N1132A, 2N2303 5 2N1132B 6 Collector-Emitter Voltage VcER Vde (Rup = 109) 2N722, 2N1132, 2N1132A, 2N2303 50 2N1132B 60 Collector Current Ic mAdc 2N2303 500 2N1132A, 2N1132B 600 Total Device Dissipation @ Tc = 25C Pp TO-5: 2N1132, 2N1132A, 2N1132B, 2N2303 2 Watts Derating Factor Above 25C 13.3 mW/C TO-18: 2N722 1.5 Watts Derating Factor Above 25C 10 mW/C Total Device Dissipation @ T, = 25C Pp TO-5: 2N1132, 2N1132A, 2N1132B, 2N2303 0.6 Watt Derating Factor Above 25C 4.0 mwW/C TO-18:; 2N722 0.4 Watt Derating Factor Above 25C 2.6 mW/C Junction Temperature Ty +175 oc Storage Temperature Range Tstg -65 to+ 200 C 8-36 Switching and General Purpose Transistors 2N722, 2N1132,A,B, 2N2303 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Types Symbol Min | Max | Unit Collector-Base Breakdown Voltage BVcpo Vde (Ig = 100 nAdc, Ig = 0) 2N722, 2N1132, 2N2303 50 _ 2N1132A 60 _ 2N1132B 10 - Emitter-Base Breakdown Voltage BVEBO Vdc (Ig = 100 Adc, Ig = 0) 2N722, 2N1132, 2N2303 5 _ (lg = 1 mAdc, Ic = 0) 2N1132A4 5 _ 2N1132B 6 _ Collector-Emitter Breakdown Voltage BVcEo Vde (Ig = 100 mAde pulsed) 2N722, 2N1132, 2N2303 35 2N1132A 40 _ 2N1132B 50 _ Collector-Emitter Breakdown Voltage BVcEeR Vdc {I = 100 mAdc pulsed, Rope 3 109) 2N722, 2N1132, A, 2N2303 50 2N1132B 60 Collector Cutoff Current IcBo Adc (Vos = 30 Vde, Ip = 0) 2N722, 2N1132, 2N2303 1 (Vog = 30 Vde, Ig = 0, Ta = 150C) 2N722, 2N1132, 2N2303 _ 100 (Voy = 50 Vde, Ig = 0) 2N1132A _ 0.5 2N1132B _ 0.01 (Von = 50 Vde, Ig = 0, T, = 150C) 2N1L132A _ 50 2N1132B _ 10 Emitter Cutoff Current TpBo MAdc (Veep = 5 Vdc, I, = 0) 2N1132A 100 2N1132B _ 0.1 (Vey = 2 Vde, k= 0) 2N2303 100 DC Forward Current Transfer Ratio hee _ (lc = 5 mAdc, Vog = 10 Vde) 2N722, 2N1132, A, B 25 ~~ 2N2303 wi) _ (Ig = 150 mAdc, Vopr = 10 Vde) 2N722, 2N1132, A, B 30 90 2N2303 15 200 Collector-Emitter Saturation Voltage Vex(sat) Vde (Ig = 150 mAdc, Ig = 15 mAdc) All Types _ 1.5 Base- Emitter Saturation Voltage VEE(sat) Vde (lg = 150 mAdc, Ip = 15 mAde) All Types 7 1.3 Output Capacitance Cob pF (Vop = 10 Vde, Ip = 0,f = 100 kHz) 2N722, 2N1132, 2N2303 _ 45 (Vop = 10 Vac, Ipg= 0,f= 1 MHz) 2N1132A, 2N1132B _ 30 Input Capacitance Cip pF (Vep = 0.5 Vde, Ig = 0, f= 100 kHz) All Types 80 Small-Signal Forward Current Transfer Ratio bee -_ {Ig = 1 mAde, Vcg = 5 Vde, f = 1 kHz) 2N722, 2N1132 25 100 2N1132A, 2N1132B 25 xi) 2N2303 15 300 (Ig = 5 mAdc, Vog = 10 Vdc, f = 1 kHz) 2N722, 2N1132, A, B 30 2N2303 5 _ Current-Gain Bandwidth Product f; MHz (Ig = 50 mAdc, Vog = 10 Vde, f= 20 MHz) | All Types 60 _ Small Signal Input Resistance hip ohms (Ic = Ll mAde, Vop = 5 Vde, f= 1 kHz) 25 35 (lg = 5 mAde, Vo = 10 Vde, f= 1 kHz) All Types ~ 10 Small Signal Output Admittance bop &mhos (ig = 1 mAdc, Vog = 5 Vde, f = 1 kHz) ~ 1 (Ig = 5 mAdc, Vog = 10 Vde, f = 1 kHz) All Types _ 5 Small Signal Voltage Feedback Ratio hyp x10" (lg = 1 mAde, Vog = 5 Vde, f = 1 kHz) _ All Types (lg = 5 mAdc, Vog = 10 Vde,f = 1 kHz) _ 8 8-37