Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8 Aand 10 A, 350 V - 400 V N-CHANNEL ENHANCEMENT MODE lpston = 0.55 Q and 0.80 D Features: a SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics 6 m High input impedance a Majority carrier device $s 9208-33741 TERMINAL DIAGRAM The IRF740, !RF741, IRF742, and IRF743 are n-channel enhancement-mode silicon-gate power field-effect transis- TERMINAL DESIGNATION tors designed for applications such as switching regula- tors, switching converters, motor drivers, relay drivers, and SOURCE drivers for high-power bipolar switching transistors requir- oo f ing high speed and low gate-drive power. These types can cepa DRAIN be operated directly from integrated circuits. OC) at The IRF-types are supplied in the JEDEC TO-220AB plastic to F package. TOP VIEW GATE 9208-39526 JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF740 IRF741 IRF742 {RF743 Units Vos Drain - Source Voltage O 400 350 400 350 v VOGR Drain - Gate Voltage (Rgg = 20 kf) 400 350 400 350 v Ip @ Tc = 25C Continuous Drain Current 10 10 8.0 8.0 A Ip @ Te = 100C Continuous Drain Current 6.0 6.0 5.0 5.0 A lom Pulsed Drain Current @ 40 40 32 32 A Vos Gate - Source Voltage +20 v Pp @ Tc = 28C Max. Power Dissipation 125 {See Fig. 14) Ww Linear Derating Factor 1.0 (See Fig. 14) wc lim Inductive Current, Clamped (See Fig. 15 and 16) L = 100uH A 40 I 40 | 32 | 32 T. i ion ani Trg Seorage vemperstare Mange ~85 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s} C 3-189Standard Power MOSFETs IRF740, IRF741, IRF742, IRF743 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min. } Typ. | Max. Units Test Conditions BVpss_ Orain - Source Breakdown Voltage IRF740 _ _ = iRe742 | 400 v Veg = OV IRF741 inF74g | 350 - | - Ip = 250pA V@sith) Gate Threshold Voltage ALL 2.0 > 4.0 Vps = Ves. lp = 250nA [Gsg _ Gate-Source Leakage Forward ALL = - 500 oA Ves = 20V lasg _Gate-Source Leakage Reverse ALL - |~500 nA Veg = -20V Ipss Zero Gate Voltage Drain Current ALL = = 250 BA Vps = Max. Rating, Vgs = OV t = = 1000 BA Vos = Max. Rating x 0.8, Veg = OV, Tc = 125C IDion) _ On-State Drain Current @ IRF740 ine7gr | 'O | |W A Vos >'pion)* Rpsion) max. Vag = 10V IRF742 | 6 4 _ _ A IRF743 . Rpsion) Static Orain-Source On-State iRF740 _ Resistance IRF741 0.47 | 0.55 a Vv 1ov.1 5.0A IRF742 | ea | a0 0 Gs eps IRF743 . Sts Forward Transconductance @) ALL 4.0 7.0 - S () Vps? 'pion) * Rpsion) max. 'p = 5-04 Ciss input Capacitance ALL - 1250 _ pF V6g = OV, Vpg = 25V, f = 1.0 MHz Coss Output Capacitance ALL = 300 _ pF See Fig. 10 Crss Reverse Transfer Capacitance ALL = 80 _ pF tdjon) _ Turn-On Delay Time ALL = 17 35 as Vop * 175V. tp = 5.0A, 2, = 4.72 uy Rise Time ALL = 5.0 15 ns See Fig. 17 tdioff) _Turn-Off Delay Time ALL = 45 90 ns {MOSFET switching times are essentially r tf Fall Time ALL _ 16 35 ns independent of operating temperature.) Q, Total Gate Charge Veg = 10V. Ip = 12A, Vig = 0.8 Max. Rating. 9 . . ALL - 41 60 ic GS 'D **DS (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially Qgs Gate-Source Charge ALL _ 18 27 nc independent of Operating temperature.) Qgq Gate-Drain (Miller) Charge ALL - 23 35 nc lp Internal Drain Inductance - 3.5 - nH Measured from the Moditied MOSFET contact screw on tab symbol showing the to center of die. internal device ALL inductances, - 4.5 ~ nH Measured from the drain lead, 6mm (0.25 in.) from package to 0 center of die. ls Internal Source Inductance ALL - 7.6 - nH Measured from the source lead, 6mm (0.25 in.) from i package to source bonding pad. Thermal Resistance Rinyc Junction-to-Case ALL = - 1.0 C/W Rihcs _ Case-to-Sink ALL - 1.0 - C/W Mounting surface flat, smooth, and greased. Ringa _Junction-to-Ambient ALL = ~ so | C/w Free Air Operation Source-Drain Diode Ratings and Characteristics Ig Continuous Source Current IRF7406 _ _ 10 A Modified MOSFET symbol (Body Diode) IRF741 showing the integral IRF742 reverse P-N junction rectifier. IRF743 > - { 8 A Y Ism Pulse Source Current IRF740 _ (Body Diode) @) IRE744 -; A / IRF742 ine7aa | ~ | ~ | 32 A Vsp Diode Forward Voltage @ IRF740 _ _ 2,0 v Te = 26C, Ig = 10A, Vgg = OV IRF741 IRF742 = 25 e = IRF 743 - _ 1.9 Vv To = 25C, Ig = 8.0A, Vgg = OV tr Reverse Recovery Time ALL - 800 - ns Ty = 150C, Ie = 10A, dle/dt = 100 A/us QaR _ Reverse Recovered Charge ALL - 5.7] xe Ty = 150C, ip = 104, dig/dt = 100 A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. @Ty = 25C to 150C. 3-190 Pulse Test: Pulse width < 300ps, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermat Impedance Curve (Fig. 5).Zehaclt/Brhyc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) Standard Power MOSFETs IRF740, IRF741, IRF742, IRF743 us PULSE t ' Vos > 'p(on) * tp, DRAIN CURRENT (AMPERES) |p, ORAIN CURRENT (AMPERES) 0 20 40 60 80 100 a 2 4 6 8 10 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Veg, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 100 AREA IS LIMITEO 40 PULSE TEST 50 20 g g = = 10 # 2 = = < = e e z =z & & oc oc > B 2 <7 oO z z = = 10 a 2 Te = 26C oa a = ~ 05 Ty = 180C MAX, Rthyc = 1.0 KW SINGLE PULSE IRF741,3 02 . \ 2 av a1 0 2 4 6 8 10 1002 5 10 20 80 100 200 500 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area = | 0.2 0.4 : rtm po 12 1, DUTY FACTOR, 0 = < . SINGLE THERMAL IMPEDANCE} 2. PER UNIT BASE = Rinyc = 1.0 DEG. C/W. , 3. Tym - Te = Pom Ztnyc lt). 0.02 0.01 10-5 2 10-4 2 5 10-3 2 5 19-2 2 5 10-1 2 1.0 2 5 10 . ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 3-191Standard Power MOSFETs IRF740, IRF741, IRF742, IRF743 6 ws PULSE Vos > lo(on) * Rosion) we a S a Ty = 180C fy. TRANSCONDUCTANCE (SIEMENS) nN ipa, REVERSE DRAIN CURRENT (AMPERES) 1.0 0 5 10 18 20 25 Q 2 3 4 5 Ip, DRAIN CURRENT (AMPERES) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 25 TAS 2.0 e wn 2 8 {NORMALIZED) Vgg = 10V =5.5A 0.85 05 BVpsg, DRAIN-TO-SQURCE BREAKDOWN VOLTAGE (NORMALIZED) Aston). ORAIN-TO-SOURCE ON-STATE RESISTANCE 075 49 0 40 80 420 160 G0 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Cig = Coy + Coq, Coy SHORTED {p= 12a FOR TEST CIRCUIT 8 Com = Cog eres 1800 cna Vig me? Cod mw lgg + Cog a Z 2 s 8 a 1200 = 3 ~ 2 3 z 5 2 z 3 0 5 3 2 ws & o a > 0 5 0 56 20 2% 0 3 40 48 50 0 20 40 60 80 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Og, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 3-192Standard Power MOSFETs IRF740, IRF741, IRF742, IRF743 Ros(on). ORAIN-TO-SOURCE ON RESISTANCE (OHMS) 10 16 qT q qT t OT T Ros{on) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C, (HEATING + EFFECT OF 2.0 us PULSE iS MINIMAL.) 1 Vgg = 10V Jf 8 12 a Y E 4 Fr 2 fifVigs = 20V 4 =, (RF740, 741 = a 08 4 IRF742, 743 > 3 wf z4 <= a 04 ~ 2 0 0 10 20 30 40 25 50 78 100 125 150 1p. DRAIN CURRENT (AMPERES) Tp, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature VARY ty TO OBTAIN REQUIRED PEAK I, E,=05BVgss Ec = 0.75 BVoss Fig. 15 Clamped Inductive Test Circuit Pp, POWER DISSIPATION (WATTS) 0 20 40 60 80 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve Fig. 16 Clamped inductive Waveforms o Vos (ISOLATED SUPPLY) CURRENT REGULATOR SAME TYPE AS DUT lav T ] Out DT SOKE BATTERY $ 175 ADJUST Ry TO OBTAIN SPECIFIED Ip Vos Ves P puise Ou.T. | GENERATOR | Lf source J | | 0 ae IMPEDANCE -Vos ~~ CURRENT = CURRENT SAMPLING SAMPLING = RESISTOR RESISTOR Fig. 17 Switching Time Test Circuit Fig. 18 Gate Charge Test Circuit 3-193