ES1AL - ES1JL CREAT BY ART 1.0AMP. Surface Mount Super Fast Rectifiers Sub SMA Pb RoHS COMPLIANCE Features For surface mounted application Low profile package Low power loss, high efficiency Ideal for automated placement Glass passivated chip junction High temperature soldering: 260/10 seconds at terminals Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Dimensions in inches and (millimeters) Marking Diagram Case: Sub SMA plastic case Terminal: Pure tin plated, lead free Polarity: Color band cathode end G = Green Compound Packing: 8mm/12mm tape per EIA STD RS-481 Y = Year Weight: 0.0196 grams M = Work Month EXL = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES 1AL ES 1BL ES 1CL ES 1DL ES 1FL ES 1GL ES 1HL ES 1JL Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current IF(AV) 1 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 30 A Type Number Maximum Instantaneous Forward Voltage (Note 1) @1A Maximum Reverse Current @ Rated VR T A=25 T A=125 VF Trr Typical Junction Capacitance (Note 3) Cj Operating Temperature Range Storage Temperature Range RjA RjL 1.7 1.3 V 5 IR Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance 0.95 uA 100 35 10 nS 8 85 35 pF O C/W TJ - 55 to + 150 O C TSTG - 55 to + 150 O C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:F11 RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL) FIG. 2 TYPICAL FORWARD CHARACTERISRICS FIG.1 FORWARD CURRENT DERATING CURVE 100 ES1HL-ES1JL 1 0.8 0.6 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 INSTANTANEOUS FORWARD A CURRENT (A) AVERAGE FORWARD A CURRENT (A) 1.2 ES1FL-ES1GL 10 ES1AL-ES1DL 1 0.1 0 80 90 100 110 120 130 140 150 LEAD TEMPERATURE (oC) TA=25 Pulse Width=300us 1% Duty Cycle 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE A CURRENT (A) 30 8.3mS Single Half Sine Wave JEDEC Method 25 20 15 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 5 TYPICAL REVERSE CHARACTERISTICS 1000 TA=125 INSTANTANEOUS REVERSE A CURRENT (uA) 100 FIG. 4 TYPICAL JUNCTION CAPACITANCE 14 CAPACITANCE (pF) 12 ES1AL-ES1DL 10 8 6 ES1FL-ES1JL 4 10 TA=75 1 TA=25 0.1 TA=25 f=1.0MHz Vsig=50mVp-p 2 0.01 0 1 10 REVERSE VOLTAGE (V) 100 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:F11 140