VWI 3x20-06P1 IC25 = 19 A = 600 V VCES VCE(sat) typ. = 1.9 V IGBT Module Sixpack in ECO-PAC 1 Preliminary 2-3 6-7 K 1/A 5/A H A 1/H 5/H G 4/N N 4/G 8/G 8/N Pin arrangement see outlines Features IGBTs Conditions Maximum Ratings VCES TVJ = 25C to 150C VGES 600 V 20 V IC25 IC80 TC = 25C TC = 80C 19 14 A A ICM VCEK VGE = 15 V; RG = 82 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H 20 A tSC (SCSOA) VCE = 720 V; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive 10 s Ptot TC = 25C 73 W Symbol Conditions VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 0.35 mA; VGE = VCE ICES VCE = VCES; IGES td(on) tr td(off) tf Eon Eoff VCES 1.9 2.2 4.5 2.4 V V 6.5 V 0.6 mA mA 100 nA 2.7 VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 10 A VGE = 15 V; RG = 82 35 35 230 30 0.4 0.3 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 10 A 600 39 pF nC RthJC RthJH (per IGBT) 3.4 1.7 K/W K/W with heatsink compound (0.42 K/m.K; 50 m) * FRED diodes - fast reverse recovery - low forward voltage * Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Typical Applications Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VGE = 0 V; TVJ = 25C TVJ = 125C * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching * AC drives * power supplies with power factor correction 238 Symbol IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-5 www.ixys.com IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 VWI 3x20-06P1 Diodes Dimensions in mm (1 mm = 0.0394") Symbol Conditions IF25 IF80 TC = 25C TC = 80C Maximum Ratings 21 14 A A N H 5/H Symbol Conditions Characteristic Values min. typ. max. VF IF = 10 A; TVJ = 25C TVJ = 125C 1.9 1.4 IRM t rr IF = 10 A; diF/dt = -400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V 11 80 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 m) 7.0 3.5 K/W K/W 5/A V V 6/7 A 8/N 8/G 4/N 1/H 1/A 2.1 K 2/3 4/G G Data according to IEC 60747 and refer to a single diode unless otherwise stated. Component Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 C C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 VISOL IISOL 1 mA; 50/60 Hz; t = 1 s Md mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved mm mm 20 g 238 Symbol 2-5 VWI 3x20-06P1 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 238 IGBT 3-5 VWI 3x20-06P1 IGBT Transient thermal resistance junction to heatsink 10 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 (ZthJH is measured using 50 m thermal grease) IGBT ZthJH [K/W] 0.1 0.01 0.001 100 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 238 t (s) 4-5 VWI 3x20-06P1 Diode 30 1.4 T = 100C nC VJ V = 300V 1.2 R A 25 IF TVJ=150C TVJ=100C TVJ= 25C 20 15 40 TVJ= 100C A VR = 300V 1.0 Qr IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 0.0 100 2.0 V 2.5 1.5 0 A/s 1000 -diF/dt VF Forward current IF versus VF 0 200 Reverse recovery charge Qr versus -diF/dt 120 2.0 20 trr 1.5 1.0 90 IRM 80 0.5 0.9 10 0.6 5 0.3 Qr TVJ= 100C IF = 10A 70 0.0 0 0 40 80 120 C 160 0 200 400 TVJ 600 800 1000 A/s 0 -diF/dt Dynamic parameters Qr, IRM versus TVJ s VFR tfr tfr IF= 20A IF= 10A IF= 5A 100 1.2 V VFR 15 110 Kf 600 A/s 800 1000 -diF/dt Peak reverse current IRM versus -diF/dt TVJ= 100C VR = 300V ns 400 Recovery time trr versus -diF/dt 200 400 8-06A 0.0 600 A/s 800 1000 diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 m thermal grease) 1 Fred ZthJH[K/W] D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 0.01 0.001 0.0001 0.001 0.01 t(s) 0.1 1 Transient thermal resistance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 10 100 238 0.00001 5-5