1 - 5© 2002 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
238
VWI 3x20-06P1
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 6 0 0 V
VGES ± 20 V
IC25 TC = 25°C 19 A
IC80 TC = 80°C 14 A
ICM VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 73 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
VGE(th) IC = 0.35 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES;V
GE = 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 2.7 mA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 35 ns
tr35 ns
td(off) 230 ns
tf30 ns
Eon 0.4 mJ
Eoff 0.3 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
QGon VCE = 300 V; VGE = 15 V; IC = 10 A 39 nC
RthJC (per IGBT) 1.7 K /W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 3.4 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
IC25 = 19 A
VCES = 600 V
VCE(sat) typ. = 1.9 V
IGBT Module
Sixpack in ECO-PAC 1
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
www.ixys.com
Preliminary
Pin arrangement see outlines
2-3
4/G
1/A
G4/N
6-7
1/H
N
5/A
A
H
K
5/H
8/N8/G
2 - 5© 2002 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
238
VWI 3x20-06P1
Diodes
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 21 A
IF80 TC = 80°C 14 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 10 A; TVJ = 25°C 1.9 2.1 V
TVJ = 125°C 1.4 V
IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 11 A
trr VR = 300 V; VGE = 0 V 80 ns
RthJC 3.5 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 7.0 K/W
Component
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~
Mdmounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 20 g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Dimensions in mm (1 mm = 0.0394")
A
1/A
1/H
5/A
5/H
HK
6/7
2/3
G
4/G
8/G
4/N
8/N
N
3 - 5© 2002 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
238
VWI 3x20-06P1
IGBT
4 - 5© 2002 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
238
VWI 3x20-06P1
Transient thermal resistance junction to heatsink
(Z
thJH
is measured using 50 µm
thermal grease)
IGBT
ZthJH [K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t (s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
IGBT
5 - 5© 2002 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
238
VWI 3x20-06P1
Transient thermal resistance junction to heatsink
200 600 10000 400 800
70
80
90
100
110
120
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C -diF/dt 0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns
tfr
A/µs
µs
IF= 20A
IF= 10A
IF= 5A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 10A
Peak reverse current IRM
versus -diF/dt
Reverse recovery charge Qr
versus -diF/dt
Forward current IF versus VF
TVJ= 100°C
VR = 300V TVJ= 100°C
VR = 300V
IF= 20A
IF= 10A
IF= 5A
Qr
IRM
Dynamic parameters Qr, IRM
versus TVJ
Recovery time trr versus -diF/dt Peak forward voltage VFR and tfr
versus diF/dt
IF= 20A
IF= 10A
IF= 5A
tfr VFR
TVJ=150°C
TVJ=100°C
TVJ= 25°C
8-06A
(Z
thJH
is measured using 50 µm
thermal grease)
Fred
ZthJH[K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t(s)
D = 0
D = 0. 005
D = 0. 01
D = 0. 02
D = 0. 05
D = 0. 1
D = 0. 2
D = 0.5
Diode
