SA SGS-THOMSON BTA08 BW/CW MICROELECTRONICS BTBO8 BW/CW SNUBBERLESS TRIACS FEATURES a HIGH COMMUTATION : (di/dt)c > 7A/ms without snubber A2 Ay ws HIGH SURGE CURRENT : Itsm = 80A Vor UP TO 800V S a BTA Family : INSULATING VOLTAGE = 2500V;pms) / (UL RECOGNIZED : 81734) DESCRIPTION y The BTA/BTBO8 BW/CW triacs use high per- formance glass passivated chips technology. Ay bo The SNUBBERLESS concept offer suppression G of RC network and it is suitable for application TO 220 AB such as phase control and static switching on in- (Plastic) ductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit (RMS) RMS on-state current BTA Tc = 90 C 8 A (360 conduction angle) BTB Te = 95 C ITSM Non repetitive surge peak on-state current tp = 8.3 ms 85 A ( Tj initial = 25C ) tp = 10 ms 80 2 12t value tp = 10 ms 32 A2s di/dt Critical rate of rise of on-state current Repetitive 20 Aus Gate supply :1q = 500mA dig/dt = 1A/us F = 50 Hz Non 100 Repetitive Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10s at 4.5 mm 230 C from case Symbol Parameter BTA / BTBOS8-... BW/CW Unit 400 600 700 800 VDRM Repetitive peak off-state voltage 400 600 700 800 v VRARM Tj = 125 C July 1991 Mid 315 BTAOS BW/CW / BTBO8 BW/CW THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) [Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC BTA 4.4 C/W BTB 3.3 Ath (j-c) AC | Junction to case for 360 conduction angle BTA 3.3 C ( F= 50 Hz) BTB 2.5 GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp =20 us) Iqm=4A(tp=20 ps) VGM= 16V (tp = 20 1s). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit BW cw IGT Vp=12V (DC) RL=332 Tj=25C 1-1-1 MIN 2 1 mA MAX 50 35 VG@T Vp=t2V (DC) RL=33Q Tj=25C IHU MAX 15 Vv VG@D VD=VDRM RL=3.3kQ Tj2125C Ia MIN 0.2 v tgt Vo=VpRM !G = 500mA Tj=25C tHl-dtt TYP 2 ps dig/dt = 3A/us I IG=1.2 IGT Tj=25C Itt TYP | 40 - mA WW TYP 80 - lll MAX - 50 HW MAX - 80 IH * IT= 500mA gate open Tj=25C MAX 50 35 mA Vim * | ItM= 111A tp= 380us Tj=25C MAX 1.75 V IDRM VpRM Rated Tj=26C MAX 0.01 mA 'RRM VRRM Rated Tj=125C MAX 2 dv/dt * Linear slope up to Vp=67%VpAM Tj=126C MIN 500 250 Vius gate open TYP 750 500 (di/dt}c * | Without snubber Tj=125C MIN 7 45 A/ms TYP 14 9 * For either polarity of electrode Ao voltage with reference to electrode A1. 25 316 BTA08 BW/CW / BTBO8 BW/CW ORDERING INFORMATION Package / Vv BTA 400 (Insulated) 600 700 800 BTB 400 (Uninsulated) 600 700 800 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (di/dt)c limitation) P (W) 12 180 8 a- 120 QA: 90 6 OQ: 4 2 0 0 Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (BTB). P (Ww) Tease (C) 12 0 95 10 160 5 8 105 6 110 4 115 2 tamb (C) 120 125 0 20 40 60 80 100 120 140 i SGS-THOMSON JA Rickorucraowmes ow = 2 = mK YK [OK LK LK P< Po | x xX | K [KP XK PK LK p< | x Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (BTA). P (Ww) Toase (C) 12 Ath=_o 25 10 . 78 Tamb (C) 126 it 20 40 60 80 100 120 140 Fig.4 : RMS on-state current versus case temperature. 'TRMS) (A) BTA 8TB 6 \ 4 oe +180" \ Tcase("C) \ 1 0 20 40 60 80 100 120 140 ws 317 BTA0S8 BW/CW / BTBO8 BW/CW Fig.5 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. (Zth j-c : BTA only version) 2th (C/W) 10E-09 1.0E-02 10E-01 1.06*00 1.06+01 1.0E+02 1.0+03 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Ig (A 70 Tj initial = 25C 60 50 40 30 20 10 Number of cycles 1 10 100 1000 Fig.9 : On-state characteristics (maximum values). "Tm (A) 100 Tj initial 25C = Tj max Vto = 105V Rt =0.0560 Vim (V) 1 2 3 4 6 4/5 318 ky seg OMSON Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. IgtITil Abit IgthTj-25C thiTj-25 TC 2.6 (gt 15 0.5 + Tj (C) 0 a -40-30-20-10 0 10 20 30 40 60 60 70 8G BO 100110420130 Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10ms, and corresponding value of {2t. IrslA). It (A*s) Tj initiat = 26C 'TS5M 100 st 10 BTA08 BW/CW / BTBO8 BW/CW PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic 2.54 $0.25 { 2.54 2 0.25 Ay A G 4.65 10.17 Cooling method : by conduction (method C) Marking : type number Weight : 2g Polarity : NA GS-THOMSO Sf A SGS-THOMSON 5/5 319