Vishay Siliconix
DG411, DG412, DG413
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (tON: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411, DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FEATURES
• Halogen-free according to IEC 61249-2-21
Definition
• 44 V supply max. rating
• ± 15 V analog signal range
• On-resistance - RDS(on): 25
• Fast switching - tON: 110 ns
• Ultra low power - PD: 0.35 µW
• TTL, CMOS compatible
• Single supply capability
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Widest dynamic range
• Low signal errors and distortion
• Break-bevor-make switching action
• Simple interfacing
APPLICATIONS
• Precision automatic test equipment
• Precision data acquisition
• Communication systems
• Battery powered systems
• Computer peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” 0.8 V
Logic “1” 2.4 V
Logic “0” 0.8 V
Logic “1” 2.4 V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
T op V iew
IN
1
IN
2
D
1
D
2
S
1
S
2
V- V+
GND V
L
S
4
S
3
D
4
D
3
IN
4
IN
3
Dual-In-Line and SOIC
Top View
S
1
S
2
V- V+
NC NC
GND V
L
S
4
S
3
LCC
NC IN
3
D
3
D
4
IN
4
NC IN
2
D
2
D
1
IN
1
Key
910111213
4
5
6
7
8
1232019
14
15
16
17
18
DG41 1 DG411
TRUTH TABLE
Logic DG411 DG412
0 ON OFF
1OFFON
Top View
S1S2
V- V+
NC NC
GND VL
S4S3
LCC
NC IN3D3
D4IN4
NC IN2D2
D1IN1
Key
910111213
4
5
6
7
8
1232019
14
15
16
17
18
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
T op V iew
IN
1 IN2
D
1 D2
S
1 S2
V- V+
GND VL
S
4 S3
D
4 D3
IN
4 IN3
Dual-In-Line and SOIC
DG413 DG413
TRUTH TABLE
Logic SW1, SW4SW2, SW3
0 OFF ON
1ONOFF
www.vishay.com
2
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on SX, DX, or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
ORDERING INFORMATION
Temp. Range Package Part Number
- 40 °C to 85 °C
16-pin plastic DIP
DG411DJ
DG411DJ-E3
DG412DJ
DG412DJ-E3
DG413DJ
DG413DJ-E3
16-pin narrow SOIC
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
DG412DY
DG412DY-E3
DG412DY-T1
DG412DY-T1-E3
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
16-pin TSSOP
DG411DQ-E3
DG411DQ-T1-E3
DG412DQ-E3
DG412DQ-T1-E3
DG413DQ-E3
DG413DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
V + to V - 44
V
GND to V - 25
VL(GND - 0.3) to (V+) + 0.3
Digital Inputsa, VS, VD
(V-) -2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (Any terminal) 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100
Storage Temperature (AK, AZ suffix) - 65 to 150 °C
(DJ, DY suffix) - 65 to 125
Power Dissipation (Package)b
16-pin plastic DIPc470
mW
16-pin narrow SOICd600
16-pin CerDIPe900
LCC-20e900
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
3
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Specified
V + = 15 V, V - = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
Drain-Source
On-Resistance RDS(on)
V + = 13.5 V, V - = - 13.5 V
IS = - 10 mA, VD = ± 8.5 V
Room
Full
25 35
45
35
45
Switch Off Leakage
Current
IS(off) V + = 16.5, V - = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
Room
Full
± 0.1 - 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
nAID(off)
Room
Full
± 0.1 - 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
Channel On Leakage
Current ID(on)
V + = 16.5 V, V - = - 16.5 V
VS = VD = ± 15.5 V
Room
Full
± 0.1 - 0.4
- 40
0.4
40
- 0.4
- 10
0.4
10
Digital Control
Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 µA
Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5
Dynamic Characteristics
Tu r n - On T im e t ON RL = 300 , CL = 35 pF
VS = ± 10 V, see figure 2
Room
Full
110 175
240
175
220
nsTurn-Off Time tOFF
Room
Full
100 145
160
145
160
Break-Before-Make
Time Delay tD
DG413 only, VS = 10 V
RL = 300 , CL = 35 pF Room 25
Charge Injection Q Vg = 0 V, Rg = 0
CL = 10 nF Room 5 pC
Off IsolationeOIRR RL = 50 CL = 5 pF,
f = 1 MHz
Room 68
dB
Channel-to-Channel
CrosstalkeXTALK Room 85
Source Off CapacitanceeCS(off)
f = 1 MHz
Room 9
pF
Drain Off CapacitanceeCD(off) Room 9
Channel On
CapacitanceeCD(on) Room 35
Power Supplies
Positive Supply Current I+
V + = 16.5 V, V - = - 16.5 V
VIN = 0 V or 5 V
Room
Full
0.0001 1
5
1
5
µA
Negative Supply Current I- Room
Full
- 0.0001 - 1
- 5
- 1
- 5
Logic Supply Current IL
Room
Full
0.0001 1
5
1
5
Ground Current IGND
Room
Full
- 0.0001 - 1
- 5
- 1
- 5
www.vishay.com
4
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONSa (for Unipolar Supplies)
Parameter Symbol
Test Conditions
Unless Specified
V + = 12 V, V - = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Temp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C Unit
Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full 12 12 V
Drain-Source
On-Resistance RDS(on)
V + = 10.8 V,
IS = - 10 mA, VD = 3 V, 8 V
Room
Full
40 80
100
80
100
Dynamic Characteristics
Tur n -On T i m e tON RL = 300 , CL = 35 pF
VS = 8 V, see figure 2
Room
Hot
175 250
400
250
315
nsTurn-Off Time tOFF
Room
Hot
95 125
140
125
140
Break-Before-Make
Time Delay tD
DG413 only, VS = 8 V
RL = 300 , CL = 35 pF Room 25
Charge Injection Q Vg = 6 V, Rg = 0 , CL = 10 nF Room 25 pC
Power Supplies
Positive Supply Current I+
V + = 13.5 V, VIN = 0 V or 5 V
Room
Hot
0.0001 1
5
1
5
µA
Negative Supply Current I- Room
Hot
- 0.0001 - 1
- 5
- 1
- 5
Logic Supply Current IL
Room
Hot
0.0001 1
5
1
5
Ground Current IGND
Room
Hot
- 0.0001 - 1
- 5 - 5
On-Resistance vs. VD and Power Supply Voltage
V
D
- Drain Voltage (V)
- 20 - 15 - 10 - 5 0 5 10 15 20
45
40
35
30
25
20
15
10
5
0
50
R
DS(on)
- Drain-Source On-Resistance (Ω)
T
A
= 25 °C ± 5 V
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
On-Resistance vs. VD and Unipolar Supply Voltage
0 2 4 6 8 101214161820
0
50
100
150
200
250
300
V
V
L
= 5 V
V+ = 3 V
V
L
= 3 V
8 V
V+ = 5 V
12 V 15 V 20 V
V
D
- Drain Voltage (V)
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
5
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Leakage Current vs. Analog Voltage
Charge Injection vs. Analog Voltage
Input Switching Threshold vs. Supply Voltage
(pA)
I, I
SD
VD or VS - Drain or Source Voltage (V)
30
10
- 40
- 60
- 15 - 10 - 5 0 5 10 15
20
0
- 50
- 30
- 10
- 20
V+ = 15 V
V- = - 15 V
V
L
= 5 V
T
A
= 25 °C I
D(of f)
I
S( of f)
I
D(on)
40
Q (pC)
V
S
- Source Voltage (V)
100
80
60
40
20
0
- 20
- 40
- 60
- 15 - 10 - 5 0 5 10 15
V+ = 15 V
V- = - 15 V
V
L
= 5 V
C
L
= 10 nF
C
L
= 1 nF
(V)
TH
V
3.5
3.0
5 1015202530354
0
2.5
2.0
1.5
1.0
0.5
0
(V+)
6.5 V
5.5 V
V
L
= 7.5 V
4.5 V
ID, IS Leakages vs. Temperature
Charge Injection vs. Analog Voltage
Switching Time vs. Temperature
- 15 - 10 - 5 0 5 10 15
5
10
15
20
25
30
35
V+ = 15 V
V- = - 15 V
V
L
= 5 V
125 °C
85 °C
25 °C
- 55 °C
RDS(on) - Drain-Source On-Resistance ()
VD - Drain Voltage (V)
VD
- Drain Voltage (V)
Q (pC)
100
80
60
40
20
0
- 20
- 40
- 60
- 15 - 10 - 5 0 5 10 15
120
140
V+ = 15 V
V- = - 15 V
V
L
= 5 V C
L
= 10 nF
C
L
= 1 nF
Temperature (°C)
(ns)tON,t
OFF
240
180
120
60
0
- 55 - 35 - 15 5 25 45 65 85 105 125
210
150
90
30
V+ = 15 V
V- = - 15 V
V
L
= 5 V
V
S
= 10 V
t
OFF
t
ON
www.vishay.com
6
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SCHEMATIC DIAGRAM (Typical Channel)
TEST CIRCUITS
Supply Current vs. Input Switching Frequency
f - Frequency (Hz)
I
SUPPLY
100 mA
10 mA
1 mA
100 µA
10 µA
1 µA
100 nA
10 nA
100 1K 10K 100K 1M
10M
I+, I-
I
L
V+ = 15 V
V- = - 15 V
V
L
= 5 V
= 1 SW
= 4 SW
10
Figure 1.
Level
Shift/
Drive
VIN
VL
S
V+
GND
V-
D
V-
V+
Figure 2. Switching Time
0 V
Logic
Input
Switch
Input*
Switch
Output
3 V
50 %
0 V
Switch
Input*
V
S
t
r
< 20 ns
t
f
< 20 ns
90 %
- VS
t
ON
t
ON
V
O
90 %
V
O
* VS
= 10 V for t
ON
, V
S
= - 10 V for t
OFF
Note: Logic input waveform is inverted for switches that
have the opposite logic sense control
C
L
(includes fixture and stray capacitance)
V+
IN
R
L
R
L
+ r
DS(on)
V
O
= V
S
S D
- 15 V
V
O
GND
± 10 V
V
L
C
L
35 pF
V-
R
L
300
+ 15 V + 5 V
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
www.vishay.com
7
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEST CIRCUITS
Figure 3. Break-Before-Make (DG413)
0 V
Logic
Input
Switch
Switch
Output
3 V
50 %
0 V
Output
0 V
90 %
V
O2
V
O1
90 %
V
S1
V
S2
t
D t
D
V
O2
C
L
(includes fixture and stray capacitance)
V+
S
2
V-
S
1
V
L
V
S2
IN
2
D
2
V
S1
R
L2
300
D
1 V
O1
C
L2
35 pF
- 15 V
GND
+ 5 V + 15 V
R
L1
300 C
L1
35 pF
IN
1
Figure 4. Charge Injection
CL
10 nF
D
Rg
VO
V+
S
V-
3 V
IN
VL
Vg
- 15 V
GND
+ 15 V+ 5 V
OFFONOFF
OFFONOFF
VO
VO
INX
INX
Q = VO x CL
INX dependent on switch configuration Input polarity determined
by sense of switch.
Figure 5. Crosstalk
0 V, 2.4 V
S1
XTA L K Isolation = 20 log
VS
VO
D2
C = RF bypass
RL
D1
S2
VS
0 V, 2.4 V
IN150
VO
IN2
Rg = 50
VLV+
- 15 V
GND V-
NC
C
+ 15 V
C+ 5 V C
www.vishay.com
8
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
Vishay Siliconix
DG411, DG412, DG413
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATIONS
Single Supply Operation:
The DG411, DG412, DG413 can be operated with unipolar
supplies from 5 V to 44 V. These devices are characterized
and tested for unipolar supply operation at 12 V to facilitate
the majority of applications. In single supply operation, V+ is
tied to VL and V- is tied to 0 V. See Input Switching Threshold
vs. Supply Voltage curve for VL versus input threshold
requirments.
Summing Amplifier
When driving a high impedance, high capacitance load such
as shown in figure 8, where the inputs to the summing
amplifier have some noise filtering, it is necessary to have
shunt switches for rapid discharge of the filter capacitor, thus
preventing offsets from occurring at the output.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70050.
Figure 6. Off Isolation
RL
50
D
0 V, 2.4 V
V+
Rg = 50
- 15 V
GND V- C
VS
Off Isolation = 20 log VS
VO
IN
VLVO
+ 5 V
C
+ 15 V
S
C
C = RF Bypass
Figure 7. Source/Drain Capacitances
D
IN
S
VLV+
- 15 V
GND V- C
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
+ 5 V
C
+ 15 V
C
Figure 8. Summing Amplifier
+
-
DG413
R1R2
C1
R3R4
C2
R6
R5
VIN 1
VIN 2
VOUT
All Leads
0.101 mm
0.004 IN
E
HC
D
e B A1 LĬ
4312 8756
131416 15 91012 11
Package Information
Vishay Siliconix
Document Number: 71194
02-Jul-01 www.vishay.com
1
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS INCHES
Dim Min Max Min Max
A1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B0.38 0.51 0.015 0.020
C0.18 0.23 0.007 0.009
D9.80 10.00 0.385 0.393
E3.80 4.00 0.149 0.157
e1.27 BS C 0.050 BSC
H5.80 6.20 0.228 0.244
L0.50 0.93 0.020 0.037
Ĭ0_8_0_8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
E1E
Q1
A
L
A1
e1B
B1
S
CeA
D
15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71261
06-Jul-01 www.vishay.com
1
PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
E1E
Q1
A
L
A1
e1B
B1
L1
S
C
eA∝
D
12 3 4 5 6 78
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71282
03-Jul-01 www.vishay.com
1
CERDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A4.06 5.08 0.160 0.200
A10.51 1.14 0.020 0.045
B0.38 0.51 0.015 0.020
B11.14 1.65 0.045 0.065
C0.20 0.30 0.008 0.012
D19.05 19.56 0.750 0.770
E7.62 8.26 0.300 0.325
E16.60 7.62 0.260 0.300
e12.54 BS C 0.100 BSC
eA7.62 BSC 0.300 BSC
L3.18 3.81 0.125 0.150
L13.81 5.08 0.150 0.200
Q11.27 2.16 0.050 0.085
S0.38 1.14 0.015 0.045
∝0°15°0°15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
D
L1
E
BL
e
A1
A
28
1
2
Packaging Information
Vishay Siliconix
Document Number: 71290
02-Jul-01 www.vishay.com
1
20ĆLEAD LCC
MILLIMETERS INCHES
Dim Min Max Min Max
A1.37 2.24 0.054 0.088
A11.63 2.54 0.064 0.100
B0.56 0.71 0.022 0.028
D8.69 9.09 0.342 0.358
E8.69 9.09 0.442 0.358
e1.27 BS C 0.050 BSC
L1.14 1.40 0.045 0.055
L11.96 2.36 0.077 0.093
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5321
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72608
24 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
0.372
(9.449)
Return to Index
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
