SIEMENS NPN Silicon Double Transistors @ To be used as a current mirror @ Good thermal coupling and Vee matching @ High current gain @ Low emitter-saturation voltage BCV61 4 vPS05178 Type Marking Ordering Code Pin Configuration Package) (tape and reel) BCV 61A 1Js Q62702-C2155 1(2) c2(1) SOT-143 BCV 61B 1Ks Q62702-C2156 [ord BCV 61C iLs Q62702-C2157 | E1(3) 2(4) ano012 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Vee 30 Vv (transistor T1) Collector-base voltage (open emitter) Vcao 30 (transistor T1) Emitter-base voltage Veps 6 Collector current Ic 100 mA Collector peak current Icom 200 Base peak current (transistor T1) Tem 200 Total power dissipation, Ts < 99 C?) Prot 300 mW Junction temperature Ty 150 Cc Storage temperature range Tstg - 65... + 150 Thermal Resistance Junction - ambient?! Rina < 240 KAW Junction - soldering point Riis < 170 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 3841 01.97 SIEMENS BCV 61 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. | max. DC characteristics for transistor T1 Collector-emitter breakdown voltage Ic=10mA, Is=0 Vieryceo 30 - - Collector-base breakdown voltage Ic = 10 pA, Jn =0 Veryceo 30 - - Emitter-base breakdown voitage Je = 10 pA, Ic = 0 Vieryess Collector-base cutoff current Ves = 30 V, le =0 Ves = 30 V, fe = 0, Ta= 150C Iceo DC current gain) Ic = 0.1 MA, Vee=5V Ic=2MA, Vee=5V BCV 61A BCV 61B BCV 61C Are 100 |- 110 180 220 200 290 450 420 520 800 Collector-emitter saturation voltage) ic= 10 mA, =0.5 mA Ie = 100 mA, Ie = 5 mA Veesat - 90 250 mV Base-emitter saturation voltage) Ie = 10mA, ic =0.5 mA Ic = 100 mA, Ic = 5 MA VBEsat Base-emitter voltage Ic = 2MA, Vce=5 V Ic =10mMA, Vcee=5V Vee 580 |660 | 700 1) Pulse test conditions: +< 300 us, D = 2%. Semiconductor Group B42 SIEMENS BCV 61 Electrical Characteristics at 7a = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics for transistor T2 Base-emitter forward voltage fe = 10 pA Te = 250 MA Vees Matching of transistor T1 and transistor T2 at fe2 = 0.5 mA and Veer = 5 V Ta= 25C Ta = 150 C Tes / Ice Tet / Ic2 0.7 - 0.7 ~ ~ ww Thermal coupling of transistor T1 and transistor T2) 71: Vee=5V Maximum current for thermal stability of Jc: Tee mA AC characteristics for transistor T1 Transition frequency ic = 10 mA, Vee = 5 V, f= 100 MHz - 250 MHz Collector-base capacitance Ves = 10 V, lc=ic=0, f= 1 MHz Cx pF Input capacitance Ves = 0.5 V, Ic = ic = 0, f= 1 MHz Cro Noise figure Ic = 200 pA, Vee =5 V, Rs = 2 kQ f= 1 kHz, B = 200 Hz dB Input impedance Ic=1MA, Vee = 10 V, f= 1 kHz Antes Open-circuit reverse voltage transfer ratio Io=1 mA, Vee = 10 V, f= 1 KHz hie 10-4 Short-circuit forward current transfer ratio Io=1 mA, Vee = 10V, f= 1 kHz hate 100 - Open-circuit output admittance ic=1 MA, Vce= 10 V, f= 1 kHz he2e The} 1) Without emitter resistor. Device mounted on alumina 15 mm x 16.5 mm x 0.7 mm. Semiconductor Group SIEMENS BCV 61 Test circuit for current matching 1 =constant Veg Yeo EHNOOOOT Note: Voltage drop at contacts: Vco < Vr= 16 mV Characteristic for determination of Vce: at specified Re range with Jez as parameter under condition of Ic: / fez = 1.3 Note: BCV 61 with emitter resistors Semiconductor Group 844 SIEMENS BCV 61 Total power dissipation Pra = f (Ta*; Ts) * Package mounted on epoxy 400 BCY 61 EHPOOS 40, Pro mW 300 \ \ I 200 \ s WAN \ 100 \ 0 Q 56 100 C 150 oe Nils Semiconductor Group Permissible pulse load Pic max/Pio vc = f (fp) Prot mox Prot oc Ru Hit rit THC Na CTT TSS 0 1078 1078 10 107 107 ~s 10 > hh 845