5SGS 12F4500
TS - TG/142/04 Jul-10 1 of 6
5SGS 12F4500
Old part no. TG 918-1200-45
Gate Turn-off Thyristor
Properties Key Parameters
§ Full reverse voltage VDRM, VRRM
=
4 500 V
§ High reliability ITGQM
=
1 200 A
§ Suitable for drives and traction applications ITAVm
=
442 A
ITSM
=
7 600 A
VTO
=
2.285 V
rT
=
1.796 mΩ
Types
VDRM, VRRM
5SGS 12F4500
5SGS 12F4000 4 500 V
4 000 V
Conditions:
Tj = -40 ÷ 115 °C,
half sine waveform,
f = 50 Hz
Mechanical data
Fm Mounting force
10 ± 2
kN
m Weight 0.49
kg
DS Surface
creepage
distance
25
mm
Da Air strike
distance 13
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SGS 12F4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/142/04 Jul-10 2 of 6
Maximum Ratings Maximum Limits Unit
VDRM
VRRM Repetitive peak off-state
and peak reverse
voltage
Tj = -40 ÷ 115 °C, VGC = -2 V
5SGS 12F4500
5SGS 12F4000
4 500
4 000 V
ITGQM Peak Turn-off current
Tj = -40 ÷ 115 °C, CS = 3 µF, diGC /dt = -30 A/µs,
VDM = 0.8 VDRM
1 200 A
ITRMS RMS on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 694 A
ITAVm Average on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 442 A
ITSM Peak non-repetitive surge
half sine pulse, tp = 10 ms, VR = 0 V 10 000 A
I2t Limiting load integral
half sine pulse, tp = 10 ms, VR = 0 V 500 000 A2s
(diT/dt)cr Critical rate of rise of on-state current
IT = ITGQM, VD = 2/3 VDRM, f = 50 Hz 400 A/µs
(dvD/dt)cr Critical rate of rise of off-state voltage
VD = 2/3 VDRM, VGC = - 2 V 1 000 V/µs
VDSP Peak turn-off voltage spike due
to snubber 500 V
IFGCM Peak forward gate current 50 A
IGCMS RMS gate current 40 A
VGCM Peak reverse gate voltage -16 V
ton(min) Minimum permissible on-time 50 µs
toff(min) Minimum permissible off-time 100 µs
Tjmin - Tjmax Operating temperature range -40 ÷ 115 °C
Tstgmin -
Tstgmax Storage temperature range -40 ÷ 115 °C
Unless otherwise specified Tj = 115 °C
Recommended Diodes
Type of GTO Thyristor SNUBBER FREEWHEEL
5SGS 12F4500 5SDF 04D4504 5SDF 04D4504 or 5SDF 08F4505
5SGS 12F4000 5SDF 04D4004 5SDF 04D4004 or 5SDF 08F4005
5SGS 12F4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/142/04 Jul-10 3 of 6
Characteristics Value Unit
min. typ. max.
VTM Maximum peak on-state voltage
IGT = 2 A, ITM = 1 200 A 4.500
V
VT0 Threshold voltage 2.285
V
rT Slope resistance
IT1 = 533 A, IT2 = 1 600 A 1.796
mΩ
IL Latching current
Tj = 25 °C 40 A
IDM Peak off-state current
VD = VDRM, VGC = -2 V 75 mA
IRM Peak reverse current
VR = VRRM 75 mA
IGCM Peak negative gate leakage current
VGC = -16 V 50 mA
VGT Gate trigger voltage
Tj = -40 ÷ 115 °C 1.5 V
IGT
Gate trigger current
VD = 12 V, RL = 0.1 Ω
Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
9.0
1.0
0.8
A
tf
tS
tgq
ttail
Fall time
Storage time
Turn-off time
Tail time
Definitions as on Fig.9
VD = 2/3 VDRM,
ITGQ = ITGQM, CS = 3 µF,
VGC = -15 V,
diGC /dt = -30 A/µs
1.5
14.5
16
30
µs
Unless otherwise specified Tj = 115 °C
Thermal Parameters Value Unit
Rthjc Thermal resistance junction to case
double side cooling 24 K/kW
Rthch Thermal resistance case to heatsink,
double side cooling 8 K/kW
5SGS 12F4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/142/04 Jul-10 4 of 6
Transient Thermal Impedance
i 1 2 3 4
Ri( K/kW )
5.92 4.09 8.35 5.65
τi ( s ) 0.4209 0.2289 0.0749 0.0149
Analytical function for transient
thermal impedance
∑
=τ−−= 4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 10 ± 2 kN, Double side cooled
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0,0001 0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Zthjc ( K/kW )
10%
single
20%
30%
40%
50%
60%
70%
80%
D = 90%
Fig.2
Transient thermal impedance junction to case
(Double side cooled)
0
200
400
600
800
1000
1200
1400
1600
0 1 2 3 4 5 6
V
T
( V )
I
T
( A )
T
j
=25
°C
115°C
0
500
1000
1500
2000
2500
3000
3500
0200 400 600 800 1000 1200
ITAV ( A )
PT ( W )
10%
I
TRMSmax
20%
30%
40%
50%
60%
80%
D =100%
70%
90%
Fig.3
Maximum instaneous on-state
characteristics Fig.4
Power losses
vs Rectangular pulse current
5SGS 12F4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/142/04 Jul-10 5 of 6
0
200
400
600
800
1000
1200
1400
1600
1800
0 1 2 3 4 5 6
CS ( µF )
ITGQM ( A )
1
10
100
0 20 40 60 80 100
VDR normalized ( % of VDRM
)
RGC (
Ω
)
Fig.5 Maximum permissible turn-off current
vs Snubber capacitance Fig.6
Maximum forward blocking voltage
vs External gate-cathode resistance
0
1
2
3
4
5
6
7
8
9
10
-40 -20 0 20 40 60 80 100 120
Tj ( °C )
IGT ( A )
0
1
2
3
4
5
6
7
8
9
10
-40 -30 -20 -10 0 10 20 30
Tj ( °C )
IGT normalized
Typical
Fig.7
Maximum gate trigger current
vs Junction temperature Fig.8
Gate trigger current normalized to IGT
by 25°C vs Junction temperature
5SGS 12F4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/142/04 Jul-10 6 of 6
Fig.9
Turn-off waveform diagram
Notes:
