LITE-ON SEMICONDUCTOR MBR3030PTL thru 3060PTL REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications F E A P G Q O K PIN 2 1 B 3 D H C I MECHANICAL DATA Case : TO-3P molded plastic Polarity : As marked on the body Weight : 0.2 ounces, 5.6 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) N J L M L PIN 1 PIN 2 CASE PIN 3 TO-3P MIN. MAX. 15.75 16.25 21.25 21.75 20.10 19.60 3.78 4.38 1.88 2.08 4.87 5.13 4.4TYP. 1.90 2.16 2.93 3.22 1.12 1.22 2.90 3.20 5.20 5.70 2.10 2.40 0.76 0.51 2.18 1.93 DIM. A B C D E F G H I J K L M N O P Q 20 TYP 10 TYP All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) VRRM VRMS VDC MBR 3030PTL 30 MBR 3035PTL 35 21 30 24.5 35 MBR MBR MBR 3040PTL 3045PTL 3050PTL 40 45 50 28 31.5 35 50 40 45 MBR 3060PTL UNIT 60 42 60 V V V I(AV) 30 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 200 A Voltage Rate of Change (Rated VR) dv/dt 10000 V/us Maximum Forward Voltage (Note 1) @TC=110 C IF =15A @ IF =15A @ IF =30A @ IF =30A @ Maximum DC Reverse Current at Rated DC Blocking Voltage TJ =25 C TJ =125 C TJ =25 C TJ =125 C @TJ =25 C @TJ =125 C Typical Thermal Resistance (Note 2) VF 0.57 0.80 0.72 0.85 0.75 1.05 0.90 IR 1 60 5 100 V mA R0JC 5 C/W CJ 600 pF Operating Temperature Range TJ -55 to +150 C Storage Temperature Range TSTG -55 to +175 C Typical Junction Capacitance per element (Note 3) NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. REV. 3, Aug -2007, KTHD23 AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 40 30 20 10 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES MBR3030PTL thru MBR3060PTL FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 200 150 100 50 8.3ms Single Half-Sine-Wave 1 175 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 125 C 10 TJ = 75 C 1.0 0.1 TJ = 25 C 0.01 MBR3030PTL~ MBR3045PTL 10 MBR3050PTL ~ MBR3060PTL 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 100 10 TJ = 25 C, f= 1MHz 1 0.1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 1 10 REVERSE VOLTAGE , VOLTS 100 1.0