Lead-free Green
Maximum Ratings PNP, BC857B Type (Q2)
@ TA = 25°C unless otherwise specified
DS30627 Rev. 4 - 2 1 of 4 BC847BVN
www.diodes.com Diodes Incorporated
BC847BVN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Features
Maximum Ratings NPN, BC847B Type (Q1)
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Emitter Current IEM 200 mA
•Epitaxial Die Construction
•Two internally isolated NPN/PNP Transistors in one
package
•Ultra-Small Surface Mount Package
•Lead Free By Design/RoHS Compliant (Note 2)
•"Green" Device (Note 3)
Mechanical Data
•Case: SOT-563
•Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•Moisture Sensitivity: Level 1 per J-STD-020C
•Terminals: Finish Matte Tin Finish annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
•Terminal Connections: See Diagram
•Marking (See Page 3): KAW
•Ordering & Date Code Information: See Page 4
•Weight: 0.003 grams (approximate)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Peak Collector Current ICM -200 mA
Peak Emitter Current IEM -200 mA
C1
Q1Q2
B2E2
C2
E1B1
A
M
L
BC
H
K
GD
KA W YM
C1B2E2
C2
E1B1
SOT-563
Dim Min Max Typ
A0.15 0.30 0.25
B1.10 1.25 1.20
C1.55 1.70 1.60
D0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
K0.56 0.60 0.60
L0.10 0.30 0.20
M0.10 0.18
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Characteristic Symbol Value Unit
Power Dissipation (Note 1) @TA = 25oC Total Device Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) @TA = 25oCRθJA 833 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Thermal Characteristi cs
DS30627 Rev. 4 - 2 2 of 4 BC847BVN
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Electrical Characteristics NPN, BC847B Type (Q1)
@ TA = 25°C unless otherwise specified
Characteristic (Note 4) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V(BR)CBO 50 — — V IC = 10µA, IB = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 45 — — V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6——VIE = 1µA, IC = 0
DC Current Gain hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage VCE(SAT) —90
200 250
600 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) —700
900 —mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage VBE(ON) 580
—660
—700
720 mV VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
Collector-Cutoff Current ICBO —
——
—15
5.0 nA
µA VCB = 30V
VCB = 30V, TA = 150°C
Gain Bandwidth Product fT100 300 — MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO —3.5 6.0 pF VCB = 10V, f = 1.0MHz
1
10
100
1000
1.0 10 1000.10.01
h DC CURRENT GAIN
FE,
I , COLLECTOR CURRENT (mA)
C
Fig. 1, DC Current Gain vs Collector Current
(BC847B Type)
V = 5V
CE
100°C
T = 25°C
A
-50°C
0
0.1
0.2
0.3
0.4
0.5
0.1 1.0 10 100
V , COLLECTOR SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector-Emitter Saturation Voltage
vs Collector Current (BC847B Type)
I
C
I = 20
B
T = 100°C
A
T = 25°C
A
T = -50°C
A
10
100
1000
0.1 1.0 10 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Gain Bandwidth Product
vs Collector Current (BC847B Type)
T = 25°C
A
V = 10V
CE
V =5V
CE
V = 2V
CE
6
10
0510 15 20 25 30
CAPACITANCE (pF)
0
4
2
8
12
14
16
V , REVERSE VOLTAGE (V)
R
Fig. 4, Capacitance vs. Reverse Voltage
(BC847B Type)
Cobo
Cibo
f = 1MHz
Note: 4. Short duration pulse test used to minimize self-heating effect.
DS30627 Rev. 4 - 2 3 of 4 BC847BVN
www.diodes.com
-1
-10
-100
-1000
-1 -10 -100 -1000
V = 5V
CE
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
CFig. 5, DC Current Gain
vs. Collector Current (BC857B Type)
T = 25°C
A
T = -50°C
A
T = 150°C
A
-1
-0.1 -10 -100 -1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 6, Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
-0.1
-0.2
-0.3
-0.4
-0.5 IC
IB= 10
Characteristic (Note 5) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V(BR)CBO -50 ——VIC = -10µA, IB = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -45 ——VIC = -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5 ——VIE = -1µA, IC = 0
DC Current Gain hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage VCE(SAT) —-75
-250 -300
-650 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(SAT) —-700
-850 —
-950 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage VBE(ON) -600
—-650
—-750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE =- 5.0V, IC = -10mA
Collector-Cutoff Current ICBO —
——
—-15
-4.0 nA
µA VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product fT100 200 — MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance CCBO —34.5 pF VCB = -10V, f = 1.0MHz
Electrical Characteristics PNP, BC857B Type (Q2)
@ TA = 25°C unless otherwise specified
-10
-100
-1000
-1 -10 -100
f, GAIN BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
C
Fig. 7, Gain Bandwidth Product
vs Collector Current (BC857B Type)
V = -5V
CE
6
10
0510 15 20 25 30
Cibo
Cobo
CAPACITANCE (pF)
0
4
2
8
12
14
16
18
20
V , REVERSE VOLTAGE (V)
R
Fig. 8, Capacitance vs. Reverse Voltage
(BC857B Type)
f = 1MHz
Note: 5. Short duration pulse test used to minimize self-heating effect.
DS30627 Rev. 4 - 2 4 of 4 BC847BVN
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-50 0 50 100 150
200
150
50
100
0
T , AMBIENT TEMPERA TURE (°C)
A
Fig. 9, Derating Curve - Total Device
P , TOTAL POWER DISSIPATION (mW)
d
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product he rein. Diodes Incorporated does not assume any liability arisin g out of the application or u se of any product described her ein; neither
does it convey any license under its patent rights, nor the rights of othe rs. The user of products in such appl ications shall assume all risks of such use and wi ll
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
Ordering Information
Device Packaging Shipping
BC847BVN-7 SOT-563 3000/Tape & Reel
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 6)
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 123456789OND
Date Code Key
KAW = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
Marking Information
Year 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code RSTUVWXYZ