SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo, LINE No. TYPE No. 2# |0C307-3 95 98 101 104 0C309-3 0C306/1 0C304/3 0C305/2 AFY37 2N24 2N 1003 2SB460 OC3LR OC4LR OC5LR 2V632 GAS3213 GET897 2N21A XA103 GA52829 2SA212t 2SA209t GET880 GET891 SYL1690 GET889 AT/S13 40490 GET890 AT/RE2 GET895 2SA75 XA141 2SA370 2N1631 2N644t 2N645t 107# |2SA280 36 DISS. | fab @25C 110m* * 110m* 110m 110m 110m 112m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 120m 45.M 120m | 50M /3. : 7: IN ORDER OF (1} MAX COLLECTOR DISSIPATION Cob |STRUCIY200 jE 0 TURE | s/a JAD T0200)D E R43 R43 1.0mo 1.0m 50 100m | 30 At 200m | 30 At 1.0m }110 A |300nb | 28 150 t 110 t 110 Z |300nb | 28 8/40 15m |100 t Omg |300 1.0m% |220 Z |250nb | 28 5.0 1.0m /120 5.0mh 20m | 70 (Om | 45 t 1.0m | 70 1.0m | 80 5.0mZ| 45 t 120m | 75M8 |3. 2. 7.08 |5.0md| 45 t 120m* | 80M |4. : 2.0 x D.A.T.A. 10m |125 t SYMBOLS AND CODES EXPLAINED IN INTERPRETER 36