SS24T3 - ON Semiconductor - Datasheet.Directory

December, 2006 − Rev. 3 1Publication Order Number:

SS24/D

SS22, SS24

Surface Mount

Schottky Power Rectifier

SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a

metal−to−silicon power rectifier. Features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low

voltage, high frequency switching power supplies; free wheeling

diodes and polarity protection diodes.

Features

•Compact Package with J−Bend Leads Ideal for Automated Handling

•Highly Stable Oxide Passivated Junction

•Guardring for Over−Voltage Protection

•Low Forward Voltage Drop

•Pb−Free Packages are Available

Mechanical Characteristics

•Case: Molded Epoxy

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Weight: 95 mg (approximately)

•Cathode Polarity Band

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3”

Suffix to Part Number

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3B

SMB

CASE 403A

PLASTIC

SCHOTTKY BARRIER

RECTIFIER

2 AMPERES

20, 40 VOLTS

http://onsemi.com

SS2x = Specific Device Code

x = 2 or 4

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

AYWW

SS2xG

Device Package Shipping†

ORDERING INFORMATION

SS22T3 SMB 2500/Tape & Ree

MARKING DIAGRAM

SS24T3 SMB 2500/Tape & Ree

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SS24T3G SMB

(Pb−Free) 2500/Tape & Ree

SS22T3G SMB

(Pb−Free) 2500/Tape & Ree

SS22, SS24

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage SS22

SS24

VRRM

VRWM

VR20

Average Rectified Forward Current

(At Rated VR, TL = 100°C) IO2.0 A

Peak Repetitive Forward Current

(At Rated VR, Square Wave,

100 kHz, TC = 105°C)

IFRM 3.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 75 A

Storage/Operat ing Case Temperature Tstg, TC−55 to +150 °C

Operating Junction Temperature (Note 1) TJ−55 to +150 °C

Voltage Rate of Change

(Rated VR, TJ = 25°C) dv/dt 10,000 V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance,

Junction−to−Lead (Note 2)

Thermal Resistance,

Junction−to−Ambient (Note 3)

RqJL

RqJA

°C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 4)

see Figure 2 (iF = 2.0 A)

vFTJ = 25°C TJ = 125°CV

0.50 0.46

Maximum Instantaneous Reverse Current (Note 4)

see Figure 4 (VR = 40 V)

IRTJ = 25°C TJ = 100°CmA

0.4 5.7

2. Mounted with minimum recommended pad size, PC Board FR4.

3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.

4. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤2.0%.

SS22, SS24

http://onsemi.com

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

Figure 5. Current Derating Figure 6. Forward Power Dissipation

0.70.1

vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.0

400

VR, REVERSE VOLTAGE (VOLTS)

100E−3

10E−3

1.0E−3

100E−6

10E−6

1.0E−6

45 8525

TL, LEAD TEMPERATURE (°C)

2.5

1.5

1.0

0.5

IO, AVERAGE FORWARD CURRENT (AMPS)

0.5 2.00

1.2

1.0

0.8

0.6

0.2

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)I

0.1

0.3 0.5 0.9

10 20 30

, AVERAGE FORWARD CURRENT (AMPS)IO

125105 1.0 2.51.5

0.4

PFO, AVERAGE POWER DISSIPATION (WATTS)

100

TJ = 125°C

100°C

25°C

−40 °C

0.70.1

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.0

IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

0.1

0.3 0.5 0.9

100

TJ = 125°C

100°C

25°C

, REVERSE CURRENT (AMPS)

400

VR, REVERSE VOLTAGE (VOLTS)

100E−3

10E−3

1.0E−3

100E−6

10E−6

1.0E−6

10 20 30

, MAXIMUM REVERSE CURRENT (AMPS)

2.0

FREQ = 20 kHz

TJ = 125°C

100°C

25°C

TJ = 125°C

100°C

25°C

SQUARE WAVE

Ipk/Io = p

Ipk/Io = 5.0

Ipk/Io = 10

Ipk/Io = 20

SQUARE WAVE

Ipk/Io = p

Ipk/Io = 5.0

Ipk/Io = 10

Ipk/Io = 20

SS22, SS24

http://onsemi.com

Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating

Figure 9. Thermal Response — Junction to Case

Figure 10. Thermal Response — Junction to Ambient

300

VR, REVERSE VOLTAGE (VOLTS)

1000

100

VR, DC REVERSE VOLTAGE (VOLTS)

25 400

105

C, CAPACITANCE (pF)

155.0 10 20 25 35 40 30 355.0 10 2015

115

125

, DERATED OPERATING TEMPERATURE ( C)

J°

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re

verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating

TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr

where r(t) = Rthja. For other power applications further calculations must be performed.

Rtja = 24°C/W

43°C/W

63°C/W

80°C/W

93°C/W

TJ = 25°C

0.10.00001

t, TIME (s)

1.0E+00

1.0E−01

1.0E−02

1.0E−03

1.0E−04

0.0001 0.001 0.01

, TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 10 100 1000

50%

20%

10%

5.0%

2.0%

1.0%

Rtjl(t) = Rtjl*r(t)

0.10.00001

t, TIME (s)

1.0E+00

1.0E−01

1.0E−02

1.0E−03

1.0E−04

0.0001 0.001 0.01 1.0 10 100 1000

50%

20%

10%

5.0%

2.0%

1.0% Rtjl(t) = Rtjl*r(t)

R , TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SS22, SS24

http://onsemi.com

PACKAGE DIMENSIONS

SMB

CASE 403A−03

ISSUE E

2.261

0.089

2.743

0.108

2.159

0.085 ǒmm

inchesǓ

SCALE 8:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

DIM

AMIN NOM MAX MIN

MILLIMETERS

1.90 2.13 2.41 0.075

INCHES

A1 0.05 0.10 0.15 0.002

b1.96 2.03 2.11 0.077

c0.15 0.23 0.30 0.006

D3.30 3.56 3.81 0.130

E4.06 4.32 4.57 0.160

L0.76 1.02 1.27 0.030

0.084 0.095

0.004 0.006

0.080 0.083

0.009 0.012

0.140 0.150

0.170 0.180

0.040 0.050

NOM MAX

5.21 5.44 5.59 0.205 0.214 0.220

0.51 REF 0.020 REF

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

SS24/D

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative