NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 1
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Based on DDR3-1066/1333/1600 128Mx16 (1GB) / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die
Features
•Performance:
Speed Sort
PC3-8500
PC3-10600
PC3-12800
Unit
-BE
-CG
-DI
DIMM CAS Latency
7
9
11
fck – Clock Frequency
533
667
800
MHz
tck – Clock Cycle
1.875
1.5
1.25
ns
fDQ – DQ Burst Frequency
1066
1333
1600
Mbps
• 204-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• 1GB: 128Mx64 Unbuffered DDR3 SO-DIMM based on 128Mx16
DDR3 SDRAM B-Die devices.
• 2GB: 256Mx64 Unbuffered DDR3 SO-DIMM based on 256Mx8
DDR3 SDRAM B-Die devices.
•4GB: 512Mx64 Unbuffered DDR3 SO-DIMM based on 256Mx8
DDR3 SDRAM B-Die devices.
• Intended for 533MHz/667MHz/800MHz applications
• Inputs and outputs are SSTL-15 compatible
• VDD = VDDQ = 1.5V ±0.075V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- DIMM Latency: 5, 6, 7, 8/PC3-8500; 5, 6, 7, 8,
9/PC3-10600; 5, 6, 7, 8, 9, 10, 11/PC3-12800
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
• Two different termination values (Rtt_Nom & Rtt_WR)
• 14/10/1 (row/column/rank) Addressing for 1GB
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/10/2 (row/column/rank) Addressing for 4GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• 1GB: SDRAMs are in 96-ball BGA Package
• 2GB: SDRAMs are in 78-ball BGA Package
• 4GB: SDRAMs are in 78-ball BGA Package
• RoHS compliance + Halogen Free
Description
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS are un-buffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM
Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of 128Mx64 (1GB) and one rank of 256Mx64 (2GB) /
512Mx64 (4GB) high-speed memory array. Modules use four 128Mx16 (1GB) 96-ball BGA packaged devices and eight 256Mx8 (2GB)
78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw
cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between
suppliers. All NANYA DDR3 SODIMMs provide a high-performance, flexible 8-byte interface in a space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz/800MHz clock speeds and achieves high-speed data transfer
rates of 1066Mbps/1333Mbps/1600Mbps. Prior to any access operation, the device latency and burst/length/operation type must be
programmed into the DIMM by address inputs A0-A13 (1GB)/A0-A14 (2GB/4GB) and I/O inputs BA0~BA2 using the mode register set
cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 2
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Ordering Information
Part Number
Speed
Organization
Power
Leads
Note
NT1GC64BH4B0PS-BE
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 7)
128Mx64
1.5V
Gold
NT1GC64BH4B0PS-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
NT1GC64BH4B0PS-DI
DDR3-1600
PC3-12800
800MHz(1.25ns @ CL=11)
NT2GC64B88B0NS-BE
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 7)
256Mx64
NT2GC64B88B0NS-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
NT2GC64B88B0NS-DI
DDR3-1600
PC3-12800
800MHz(1.25ns @ CL=11)
NT4GC64B8HB0NS-BE
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 7)
512Mx64
NT4GC64B8HB0NS-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
NT4GC64B8HB0NS-DI
DDR3-1600
PC3-12800
800MHz(1.25ns @ CL=11)
Pin Description
Pin Name
Description
Pin Name
Description
CK0, CK1
Clock Inputs, positive line
DQ0-DQ63
Data input/output
,
Clock Inputs, negative line
DQS0-DQS7
Data strobes
CKE0, CKE1
Clock Enable
-
Data strobes complement
Row Address Strobe
DM0-DM7
Data Masks
Column Address Strobe
Temperature event pin
Write Enable
Reset pin
,
Chip Selects
VREFDQ , VREFCA
Input/Output Reference
A0-A9, A11, A13-A15
Address Inputs
VDDSPD
SPD and Temp sensor power
A10/AP
Address Input/Auto-Precharge
SA0, SA1
Serial Presence Detect Address Inputs
A12/
Address Input/Burst Chop
Vtt
Termination voltage
BA0-BA2
SDRAM Bank Address Inputs
VSS
Ground
ODT0, ODT1
Active termination control lines
VDD
Core and I/O power
SCL
Serial Presence Detect Clock Input
NC
No Connect
SDA
Serial Presence Detect Data input/output
Note: A14 is for 2GB and 4GB modules only.
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 3
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DDR3 SDRAM Pin Assignment
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
1
VREFDQ
2
VSS
53
DQ19
54
VSS
105
VDD
106
VDD
155
VSS
156
VSS
3
VSS
4
DQ4
55
VSS
56
DQ28
107
A10/AP
108
BA1
157
DQ42
158
DQ46
5
DQ0
6
DQ5
57
DQ24
58
DQ29
109
BA0
110
159
DQ43
160
DQ47
7
DQ1
8
VSS
59
DQ25
60
VSS
111
VDD
112
VDD
161
VSS
162
VSS
9
VSS
10
61
VSS
62
113
114
163
DQ48
164
DQ52
11
DM0
12
DQS0
63
DM3
64
DQS3
115
116
ODT0
165
DQ49
166
DQ53
13
VSS
14
VSS
65
VSS
66
VSS
117
VDD
118
VDD
167
VSS
168
VSS
15
DQ2
16
DQ6
67
DQ26
68
DQ30
119
A13/NC
120
ODT1
169
170
DM6
17
DQ3
18
DQ7
69
DQ27
70
DQ31
121
122
NC
171
DQS6
172
VSS
19
VSS
20
VSS
71
VSS
72
VSS
123
VDD
124
VDD
173
VSS
174
DQ54
21
DQ8
22
DQ12
73
CKE0
74
CKE1
125
NC
126
VREFCA
175
DQ50
176
DQ55
23
DQ9
24
DQ13
75
VDD
76
VDD
127
VSS
128
VSS
177
DQ51
178
VSS
25
VSS
26
VSS
77
NC
78
A15/NC
129
DQ32
130
DQ36
179
VSS
180
DQ60
27
28
DM1
79
BA2
80
A14/NC
131
DQ33
132
DQ37
181
DQ56
182
DQ61
29
DQS1
30
81
VDD
82
VDD
133
VSS
134
VSS
183
DQ57
184
VSS
31
VSS
32
VSS
83
A12/
84
A11
135
136
DM4
185
VSS
186
33
DQ10
34
DQ14
85
A9
86
A7
137
DQS4
138
VSS
187
DM7
188
DQS7
35
DQ11
36
DQ15
87
VDD
88
VDD
139
VSS
140
DQ38
189
VSS
190
VSS
37
VSS
38
VSS
89
A8
90
A6
141
DQ34
142
DQ39
191
DQ58
192
DQ62
39
DQ16
40
DQ20
91
A5
92
A4
143
DQ35
144
VSS
193
DQ59
194
DQ63
41
DQ17
42
DQ21
93
VDD
94
VDD
145
VSS
146
DQ44
195
VSS
196
VSS
43
VSS
44
VSS
95
A3
96
A2
147
DQ40
148
DQ45
197
SA0
198
45
46
DM2
97
A1
98
A0
149
DQ41
150
VSS
199
VDDSPD
200
SDA
47
DQS2
48
VSS
99
VDD
100
VDD
151
VSS
152
201
SA1
202
SCL
49
VSS
50
DQ22
101
CK0
102
CK1
153
DM5
154
DQS5
203
Vtt
204
Vtt
51
DQ18
52
DQ23
103
104
Note: A14 is for 2GB and 4GB modules only.
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 4
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Input / Output Functional Description
Symbol
Type
Polarity
Function
CK0, CK1
,
Input
Cross
point
The system clock inputs. All address and command lines are sampled on the cross point of the
rising edge of CK and falling edge of . A Delay Locked Loop (DLL) circuit is driven from the
clock inputs and output timing for read operations is synchronized to the input clock.
CKE0, CKE1
Input
Active
High
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.
,
Input
Active
Low
Enables the associated DDR3 SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored but
previous operations continue, Rank 0 is selected by ; Rank 1 is selected by
, ,
Input
Active
Low
When sampled at the positive rising edge of CK and falling edge of , signals , ,
define the operation to be executed by the SDRAM.
ODT0, ODT1
Input
Active
High
Asserts on-die termination for DQ, DM, DQS, and signals if enabled via the DDR3 SDRAM
mode register.
DM0 – DM7
Input
Active
High
The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask
by allowing input data to be written if it is low but blocks the write operation if it is high. In Read
mode, DM lines have no effect.
DQS0 – DQS7
–
I/O
Cross
point
The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the
data strobe is sourced by the controller and is centered in the data window. In Read mode, the
data strobe is sourced by the DDR3 SDRAM and is sent at the leading edge of the data window.
signals are complements, and timing is relative to the cross point of respective DQS and
. If the module is to be operated in single ended strobe mode, all signals must be tied on
the system board to VSS and DDR3 SDRAM mode registers programmed appropriately.
BA0, BA1, BA2
Input
-
Selects which DDR3 SDRAM internal bank of four or eight is activated.
A0 – A9
A10/AP
A11
A12/
A13 – A15
Input
-
During a Bank Activate command cycle, defines the row address when sampled at the cross point
of the rising edge of CK and falling edge of . During a Read or Write command cycle, defines
the column address when sampled at the cross point of the rising edge of CK and falling edge of
. In addition to the column address, AP is used to invoke autoprecharge operation at the end of
the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines the
bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command
cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is
high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then
BA0-BAn are used to define which bank to precharge.
DQ0 – DQ63
Input
-
Data Input/Output pins.
VDD, VDDSPD, VSS
Supply
-
Power supplies for core, I/O, Serial Presence Detect, Temp sensor, and ground for the module.
VREFDQ, VREFCA
Supply
-
Reference voltage for SSTL15 inputs
SDA
I/O
-
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM and temp sensor.
A resistor must be connected from the SDA bus line to VDDSPD on the system planar to act as a pull
up.
SCL
Input
-
This signal is used to clock data into and out of the SPD EEPROM and Temp sensor.
SA0 – SA2
Input
-
Address pins used to select the Serial Presence Detect and Temp sensor base address.
Output
-
The pin is reserved for use to flag critical module temperature.
Input
-
This signal resets the DDR3 SDRAM
ZQ
Supply
-
Reference pin for ZQ calibration
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 5
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram
[1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
Notes :
1. DQ wiring may differ from that shown however, DQ, DM,
DQS, and relationships are maintained as shown.
SPD
SCL
WP
SCL
SDA
SA0
SA1 A0
A1
A2
Vtt
VREFDQ
VREFCA
VDD
VDDSPD
Vtt
SPD
D0-D7
D0-D7
VSS
D0-D7
D0-D7, SPD
CK0
CK1
D0-D3
D0-D3
D0-D7
D4-D7
D4-D7
DQS0
DM0
DQS1
DM1
LDQS
L
UDM
UDQS
LDM
D0
CK0
CKE0
ODT0
A[0:13]/BA[0:2]
ZQ
240ohm
+/-1%
CK
CKE
ODT
A[0:13]/BA[0:2]
DQS2
DM2
DQS3
DM3
LDQS
L
UDM
UDQS
LDM
D1
ZQ
240ohm
+/-1%
CK
CKE
ODT
A[0:13]/BA[0:2]
DQS4
DM4
DQS5
DM5
LDQS
L
UDM
UDQS
LDM
D2
ZQ
240ohm
+/-1%
CK
CKE
ODT
A[0:13]/BA[0:2]
DQS6
DM6
DQS7
DM7
LDQS
L
UDM
UDQS
LDM
D3
ZQ
240ohm
+/-1%
CK
CKE
ODT
A[0:13]/BA[0:2]
Vtt
VDD
Vtt
DQ[0:15]
DQ[0:15]
DQ[0:15]
DQ[0:15]
DQ[0:15]
DQ[16:31]
DQ[32:47]
DQ[48:63]
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 6
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram
[2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
DQ0
DQ1
DQ2
DQ7
DQ4
DQ6
DQ5
DQ3
I/O 0
D0
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DQS/ODT/DM/CKE/S relationships must be maintained as shown.
3. For each DRAM, a unique ZQ resistor is connected to ground. The ZQ
resistor is 240Ω±1%.
4. One SPD exists per module.
ZQ
VDDSPD
VSS
VREFDQ
VREFCA
VDD/VDDQ
SPD
D0-D7
D0-D7
D0-D7
BA0-BA2 D0-D7
BA0-BA2: SDRAMs D0-D7
A0-A14
CKE0
ODT0
A0-A14: SDRAMs D0-D7
: SDRAMs D0-D7
: SDRAMs D0-D7
ODT: SDRAMs D0-D7
: SDRAMs D0-D7
CKE: SDRAMs D0-D7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DQ32
DQ33
DQ34
DQ39
DQ36
DQ38
DQ37
DQ35
I/O 0
D4
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM0
DQS0
DM4
DQS4
DQ8
DQ9
DQ10
DQ15
DQ12
DQ14
DQ13
DQ11
I/O 0
D1
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM1
DQS1
DQ40
DQ41
DQ42
DQ47
DQ44
DQ46
DQ45
DQ43
I/O 0
D5
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM5
DQS5
DQ16
DQ17
DQ18
DQ23
DQ20
DQ22
DQ21
DQ19
I/O 0
D2
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM2
DQS2
DQ48
DQ49
DQ50
DQ55
DQ52
DQ54
DQ53
DQ51
I/O 0
D6
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM6
DQS6
DQ24
DQ25
DQ26
DQ31
DQ28
DQ30
DQ29
DQ27
I/O 0
D3
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM3
DQS3
DQ56
DQ57
DQ58
DQ63
DQ60
DQ62
DQ61
DQ59
I/O 0
D7
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM7
DQS7
CK0 CK: SDRAMs D0-D7
: SDRAMs D0-D7
: SDRAMs D0-D7
DDR3
SDRAM
VTT
CKE0, A[14:0],
, , ,
ODT0, BA[2:0],
DDR3
SDRAM
VDD
CK
SPD
SCL
WP
SCL
SDA
SA0
SA1 A0
A1
A2
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 7
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram
[4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
DQS3
DM3
DQ[24:31]
DQS
DQ[0:7]
DM
D11
Notes :
1. DQ wiring may differ from that shown however, DQ, DM,
DQS, and relationships are maintained as shown.
CK1
CKE1
ODT1
A[0:14]/BA[0:2]
ZQ
240ohm
+/-1%
CK
CKE
ODT
A[0:14]/BA[0:2]
DQS1
DM1
DQ[8:15]
DQS0
DM0
DQ[0:7]
DQS2
DM2
DQ[16:23]
SPD
SCL
WP
SCL
SDA
SA0
SA1 A0
A1
A2
Vtt
VREFDQ
VREFCA
VDD
VDDSPD
Vtt
SPD
D0-D15
D0-D15
VSS
D0-D15
D0-D15, SPD
CK0
CK1
D0-D7
D0-D7
D0-D15
D8-D15
D8-D15
DQS
DQ[0:7]
DM
D1
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D0
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D2
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D3
CK0
CKE0
ODT0
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D9
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D8
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D10
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D4
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D14
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D15
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D13
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D12
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D6
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D7
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS
DQ[0:7]
DM
D5
ZQ
240ohm
+/-1%
CK
CKE
ODT
DQS4
DM4
DQ[32:39]
DQS6
DM6
DQ[48:55]
DQS7
DM7
DQ[56:63]
DQS5
DM5
DQ[40:47]
VDD
Vtt
Cterm
Vtt
VDD
Cterm
Vtt
CKE0
CKE1
D0-D7
D8-D15
D0-D7
D8-D15
ODT0
ODT1 D0-D7
D8-D15
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
A[0:14]/BA[0:2]
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 8
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
Byte
Description
SPD Data Entry (Hex.)
-BE
-CG
-DI
0
CRC range, EEPROM bytes, bytes used
92
92
92
1
SPD revision
10
10
10
2
DRAM device type
0B
0B
0B
3
Module type (form factor)
03
03
03
4
SDRAM Device density and banks
03
03
03
5
SDRAM device row and column count
11
11
11
6
Reserved
00
00
00
7
Module ranks and device DQ count
02
02
02
8
ECC tag and module memory Bus width
03
03
03
9
Fine timebase dividend/divisor (in ps)
52
52
52
10
Medium timebase dividend
01
01
01
11
Medium timebase divisor
08
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
0A
13
Reserved
00
00
00
14
CAS latencies supported
1E
3E
FE
15
CAS latencies supported
00
00
00
16
Minimum CAS latency time (tAAmin)
69
69
69
17
Minimum write recovery time (tWRmin)
78
78
78
18
Minimum CAS-to-CAS delay (tRCDmin)
69
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
50
3C
3C
20
Minimum row Precharge delay (tRPmin)
69
69
69
21
Upper nibble for tRAS and tRC
11
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
18
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
81
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
01
01
29
Minimum four active window delay (tFAWmin) MSB
90
68
40
30
SDRAM device output drivers supported
83
83
83
31
SDRAM device thermal and refresh options
05
05
05
32
Module Thermal Sensor
00
00
00
33
SDRAM Device Type
00
00
00
60
Module height (nominal)
0F
0F
0F
61
Module thickness (Max)
01
01
01
62
Raw Card ID reference
22
22
22
63
DRAM address mapping edge connector
00
00
00
117
Module manufacture ID
83
83
83
118
Module manufacture ID
0B
0B
0B
119-121
Module manufacturer Information
--
--
--
126
CRC
--
--
--
127
CRC
--
--
--
128-145
Module part number
--
--
--
146
Module die revision
--
--
--
147
Module PCB revision
--
--
--
150-175
Manufacturer reserved
--
--
--
176-255
Customer reserved
--
--
--
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 9
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
-DI
0
CRC range, EEPROM bytes, bytes used
92
92
92
1
SPD revision
10
10
10
2
DRAM device type
0B
0B
0B
3
Module type (form factor)
03
03
03
4
SDRAM Device density and banks
03
03
03
5
SDRAM device row and column count
19
19
19
6
Reserved
00
00
00
7
Module ranks and device DQ count
01
01
01
8
ECC tag and module memory Bus width
03
03
03
9
Fine timebase dividend/divisor (in ps)
52
52
52
10
Medium timebase dividend
01
01
01
11
Medium timebase divisor
08
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
0A
13
Reserved
00
00
00
14
CAS latencies supported
1E
3E
FE
15
CAS latencies supported
00
00
00
16
Minimum CAS latency time (tAAmin)
69
69
69
17
Minimum write recovery time (tWRmin)
78
78
78
18
Minimum CAS-to-CAS delay (tRCDmin)
69
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
30
20
Minimum row Precharge delay (tRPmin)
69
69
69
21
Upper nibble for tRAS and tRC
11
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
18
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
81
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
F0
30
SDRAM device output drivers suported
83
83
83
31
SDRAM device thermal and refresh options
05
05
05
32
Module Thermal Sensor
00
00
00
33
SDRAM Device Type
00
00
00
60
Module height (nominal)
0F
0F
0F
61
Module thickness (Max)
11
11
11
62
Raw Card ID reference
41
41
41
63
DRAM address mapping edge connector
00
00
00
117
Module manufacture ID
83
83
83
118
Module manufacture ID
0B
0B
0B
119-121
Module manufacturer Information
--
--
--
126
CRC
--
--
--
127
CRC
--
--
--
128-145
Module part number
--
--
--
146
Module die revision
--
--
--
147
Module PCB revision
--
--
--
150-175
Manufacturer reserved
--
--
--
176-255
Customer reserved
--
--
--
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 10
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
-DI
0
CRC range, EEPROM bytes, bytes used
92
92
92
1
SPD revision
10
10
10
2
DRAM device type
0B
0B
0B
3
Module type (form factor)
03
03
03
4
SDRAM Device density and banks
03
03
03
5
SDRAM device row and column count
19
19
19
6
Reserved
00
00
00
7
Module ranks and device DQ count
09
09
09
8
ECC tag and module memory Bus width
03
03
03
9
Fine timebase dividend/divisor (in ps)
52
52
52
10
Medium timebase dividend
01
01
01
11
Medium timebase divisor
08
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
0A
13
Reserved
00
00
00
14
CAS latencies supported
1E
3E
FE
15
CAS latencies supported
00
00
00
16
Minimum CAS latency time (tAAmin)
69
69
69
17
Minimum write recovery time (tWRmin)
78
78
78
18
Minimum CAS-to-CAS delay (tRCDmin)
69
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
30
20
Minimum row Precharge delay (tRPmin)
69
69
69
21
Upper nibble for tRAS and tRC
11
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
18
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
81
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
F0
30
SDRAM device output drivers suported
83
83
83
31
SDRAM device thermal and refresh options
05
05
05
32
Module Thermal Sensor
00
00
00
33
SDRAM Device Type
00
00
00
60
Module height (nominal)
0F
0F
0F
61
Module thickness (Max)
11
11
11
62
Raw Card ID reference
45
45
45
63
DRAM address mapping edge connector
00
00
00
117
Module manufacture ID
83
83
83
118
Module manufacture ID
0B
0B
0B
119-121
Module manufacturer Information
--
--
--
126
CRC
--
--
--
127
CRC
--
--
--
128-145
Module part number
--
--
--
146
Module die revision
--
--
--
147
Module PCB revision
--
--
--
150-175
Manufacturer reserved
--
--
--
176-255
Customer reserved
--
--
--
`
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 11
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Environmental Requirements
Symbol
Parameter
Rating
Units
TOPR
Operating Temperature (ambient)
0 to 85
°C
TSTG
Storage Temperature
-55 to +100
°C
Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Note
VDD
Voltage on VDD pins relative to Vss
-0.4 V ~ 1.975 V
V
1, 3
VDDQ
Voltage on VDDQ pins relative to Vss
-0.4 V ~ 1.975 V
V
1, 3
VIN, VOUT
Voltage on I/O pins relative to Vss
-0.4 V ~ 1.975 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1, 2
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer
to JESD51-2 standard.
3. VDD and VDDQ must be within 300 mV of each other at all times;and VREF must be not greater
Operating temperature Conditions
Symbol
Parameter
Rating
Units
Note
TOPER
Normal Operating Temperature Range
0 to 85
°C
1, 2
Extended Temperature Range
85 to 95
°C
1, 3
Note:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the
DRAM case temperature must be maintained between 0 to 85 °C under all operating conditions
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C case temperature. Full
specifications are supported in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 μs. It is also possible to specify
a component with 1X refresh (tREFI to 7.8μs) in the Extended Temperature Range. Please refer to supplier data sheet and/or the
DIMM SPD for option availability.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh
mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode
(MR2 A6 = 1b and MR2 A7 = 0b). Please refer to the supplier data sheet and/or the DIMM SPD for Auto Self-Refresh option
availability, Extended Temperature Range support and tREFI requirements in the Extended Temperature Range.
DC Electrical Characteristics and Operating Conditions
Symbol
Parameter
Min
Typ
Max
Units
Notes
VDD
Supply Voltage
1.425
1.5
1.575
V
1,2
VDDQ
Output Supply Voltage
1.425
1.5
1.575
V
1,2
Note:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 12
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Single-Ended AC and DC Input Levels for Command and Address
Symbol
Parameter
DDR3-1066 (-BE)
DDR3-1333 (-CG)
DDR3-1600(-DI)
Units
Note
Min.
Max.
Min.
Max.
Min.
Max.
VIH.CA(DC)
DC Input Logic High
Vref + 0.100
VDD
Vref + 0.100
VDD
Vref + 0.100
VDD
V
1
VIL.CA(DC)
DC Input Logic Low
VSS
Vref - 0.100
VSS
Vref - 0.100
VSS
Vref - 0.100
V
1
VIH.CA(AC)
AC Input Logic High
Vref + 0.175
Note 2
Vref + 0.175
Note 2
Vref + 0.175
Note 2
V
1, 2
VIL.CA(AC)
AC Input Logic Low
Note 2
Vref - 0.175
Note 2
Vref - 0.175
Note 2
Vref - 0.175
V
1, 2
VIH.CA(AC150)
AC Input Logic High
Vref + 0.15
Note 2
Vref + 0.15
Note 2
Vref + 0.15
Note 2
V
1, 2
VIL.CA(AC150)
AC Input Logic Low
Note 2
Vref - 0.15
Note 2
Vref - 0.15
Note 2
Vref - 0.15
V
1, 2
VRefCA(DC)
Reference Voltage
for ADD, CMD
Inputs
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
V
3, 4
Note:
1. For input only pins except RESET#. Vref = VrefCA(DC).
2. See “Overshoot and Undershoot Specifications” in the device datasheet.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
Single-Ended AC and DC Input Levels for DQ and DM
Symbol
Parameter
DDR3-1066 (-BE)
DDR3-1333 (-CG)
DDR3-1600(-DI)
Units
Note
Min.
Max.
Min.
Max.
Min.
Max.
VIH.DQ(DC)
DC Input Logic High
Vref + 0.100
VDD
Vref + 0.100
VDD
Vref + 0.100
VDD
V
1
VIL.DQ(DC)
DC Input Logic Low
VSS
Vref - 0.100
VSS
Vref - 0.100
VSS
Vref - 0.100
V
1
VIH.DQ(AC)
AC Input Logic High
Vref + 0.175
Note 2
Vref + 0.15
Note 2
Vref + 0.15
Note 2
V
1, 2, 5
VIL.DQ(AC)
AC Input Logic Low
Note 2
Vref - 0.175
Note 2
Vref - 0.15
Note 2
Vref - 0.15
V
1, 2, 5
VRefDQ(DC)
Reference Voltage for DQ, DM
Inputs
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
V
3, 4
Note:
1. For input only pins except RESET#. Vref = VrefDQ(DC).
2. See “Overshoot and Undershoot Specifications” in the device datasheet.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
5. Single-ended swing requirement for DQS, DQS# is 350 mV (peak to peak). Differential swing requirement for DQS - DQS# is 700 mV
(peak to peak).
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 13
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Operating, Standby, and Refresh Currents
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
PC3-12800
Unit
(-BE)
(-CG)
(-DI)
IDD0
Operating One Bank Active-Precharge Current
396
440
484
mA
IDD1
Operating One Bank Active-Read-Precharge Current
550
572
594
mA
IDD2P0
Precharge Power-Down Current Slow Exit
53
53
53
mA
IDD2P1
Precharge Power-Down Current Fast Exit
132
154
176
mA
IDD2Q
Precharge Quiet Standby Current
132
154
176
mA
IDD2N
Precharge Standby Current
141
163
185
mA
IDD3P
Active Power-Down Current
154
176
198
mA
IDD3N
Active Standby Current
132
176
198
mA
IDD4R
Operating Burst Read Current
880
1078
1188
mA
IDD4W
Operating Burst Write Current
924
1122
1232
mA
IDD5B
Burst Refresh Current
836
880
946
mA
IDD6
Self Refresh Current: Normal Temperature Range
53
53
53
mA
IDD7
Operating Bank Interleave Read Current
1650
1870
2090
mA
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
PC3-12800
Unit
(-BE)
(-CG)
(-DI)
IDD0
Operating One Bank Active-Precharge Current
660
748
836
mA
IDD1
Operating One Bank Active-Read-Precharge Current
836
880
924
mA
IDD2P0
Precharge Power-Down Current Slow Exit
106
106
106
mA
IDD2P1
Precharge Power-Down Current Fast Exit
220
264
308
mA
IDD2Q
Precharge Quiet Standby Current
264
308
352
mA
IDD2N
Precharge Standby Current
282
326
370
mA
IDD3P
Active Power-Down Current
264
308
352
mA
IDD3N
Active Standby Current
264
352
396
mA
IDD4R
Operating Burst Read Current
1232
1452
1584
mA
IDD4W
Operating Burst Write Current
1276
1452
1628
mA
IDD5B
Burst Refresh Current
1672
1760
1892
mA
IDD6
Self Refresh Current: Normal Temperature Range
106
106
106
mA
IDD7
Operating Bank Interleave Read Current
2948
3388
3828
mA
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
PC3-12800
Unit
(-BE)
(-CG)
(-DI)
IDD0
Operating One Bank Active-Precharge Current
942
1074
1206
mA
IDD1
Operating One Bank Active-Read-Precharge Current
1118
1206
1294
mA
IDD2P0
Precharge Power-Down Current Slow Exit
211
211
211
mA
IDD2P1
Precharge Power-Down Current Fast Exit
440
528
616
mA
IDD2Q
Precharge Quiet Standby Current
528
616
704
mA
IDD2N
Precharge Standby Current
563
651
739
mA
IDD3P
Active Power-Down Current
528
616
704
mA
IDD3N
Active Standby Current
546
678
766
mA
IDD4R
Operating Burst Read Current
1514
1778
1954
mA
IDD4W
Operating Burst Write Current
1558
1778
1998
mA
IDD5B
Burst Refresh Current
1954
2086
2262
mA
IDD6
Self Refresh Current: Normal Temperature Range
211
211
211
mA
IDD7
Operating Bank Interleave Read Current
3230
3714
4198
mA
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 14
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Standard Speed Bins
DDR3-1066MHz
Speed Bin
DDR3-1066
Unit
CL-nRCD-nRP
7-7-7 (-BE)
8-8-8 (-BF)
Parameter
Symbol
Min
Max
Min
Max.
Internal read command to first data
tAA
13.125
20.000
15.000
20.000
ns
ACT to internal read or write delay time
tRCD
13.125
-
15.000
-
ns
PRE command period
tRP
13.125
-
15.000
-
ns
ACT to ACT or REF command period
tRC
50.625
-
52.500
-
ns
ACT to PRE command period
tRAS
37.500
9*tREFI
37.500
9*tREFI
ns
CL=5
CWL=5
tCK(AVG)
3.000
3.300
3.000
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CL=6
CWL=5
tCK(AVG)
2.500
3.300
2.500
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CL=7
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
Reserved
ns
CL=8
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
ns
Supported CL Settings
5,6,7,8
6,8
nCK
Supported CWL Settings
5,6
5,6
nCK
DDR3-1333MHz
Speed Bin
DDR3-1333
Unit
CL-nRCD-nRP
8-8-8 (-CF)
9-9-9 (-CG)
Parameter
Symbol
Min
Max
Min
Max
Internal read command to first data
tAA
12.000
20.000
13.125
(13.125)5,11
20.000
ns
ACT to internal read or write delay time
tRCD
12.000
-
13.125
(13.125)5,11
-
ns
PRE command period
tRP
12.000
-
13.125
(13.125)5,11
-
ns
ACT to ACT or REF command period
tRC
48.000
-
49.125
(49.125)5,11
-
ns
ACT to PRE command period
tRAS
36.000
9*tREFI
36.000
9*tREFI
ns
CL=5
CWL=5
tCK(AVG)
2.500
3.300
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL=6
CWL=5
tCK(AVG)
2.500
3.300
2.500
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL=7
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875*
<2.5*
ns
CWL=7
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL=8
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
ns
CWL=7
tCK(AVG)
1.500
<1.875
Reserved
Reserved
ns
CL=9
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
1.500
<1.875
1.500
<1.875
ns
CL=10
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
1.500*
<1.875*
1.500*
<1.875*
ns
Supported CL Settings
5,6,7,8,9
5,6,7,8,9
nCK
Supported CWL Settings
5,6,7
5,6,7
nCK
*: Optional
`
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 15
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DDR3-1600MHz
Speed Bin
DDR3-1600
Unit
CL-nRCD-nRP
11-11-11 (-DI)
Parameter
Symbol
Min
Max
Internal read command to first data
tAA
13.75
(13.125)5,11
20.000
ns
ACT to internal read or write delay time
tRCD
13.75
(13.125)5,11
-
ns
PRE command period
tRP
13.75
(13.125)5,11
-
ns
ACT to ACT or REF command period
tRC
48.75
(48.125)5,11
-
ns
ACT to PRE command period
tRAS
35.000
9*tREFI
ns
CL=5
CWL=5
tCK(AVG)
3.000
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
Reserved
ns
CL=6
CWL=5
tCK(AVG)
2.500
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
Reserved
ns
CL=7
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875*
<2.5*
ns
CWL=7
tCK(AVG)
Reserved
Reserved
ns
CL=8
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
ns
CWL=7
tCK(AVG)
Reserved
Reserved
ns
CL=9
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
1.500
<1.875
ns
CL=10
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
1.500*
<1.875*
ns
CL=11
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
Reserved
ns
CWL=8
tCK(AVG)
1.25*
<1.5*
ns
Supported CL Settings
5, 6,(7),8,(9),10,11
nCK
Supported CWL Settings
5,6,7,8
nCK
*: Optional
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 16
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1066MHz)
Parameter
Symbol
DDR3-1066
Units
Notes
Min.
Max.
Clock Timing
Minimum Clock Cycle Time (DLL off mode)
tCK (DLL_OFF)
8
-
ns
Average Clock Period
tCK(avg)
Refer to "Standard Speed Bins)
ps
Average high pulse width
tCH(avg)
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
tCK(avg)
Absolute Clock Period
tCK(abs)
Min.: tCK(avg)min + tJIT(per)min
Max.: tCK(avg)max + tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
0.43
-
tCK(avg)
Absolute clock LOW pulse width
tCL(abs)
0.43
-
tCK(avg)
Clock Period Jitter
JIT(per)
-90
90
ps
Clock Period Jitter during DLL locking period
JIT(per, lck)
-80
80
ps
Cycle to Cycle Period Jitter
tJIT(cc)
180
180
ps
Cycle to Cycle Period Jitter during DLL locking period
JIT(cc, lck)
160
160
ps
Duty Cycle Jitter
tJIT(duty)
-
-
ps
Cumulative error across 2 cycles
tERR(2per)
-132
132
ps
Cumulative error across 3 cycles
tERR(3per)
-157
157
ps
Cumulative error across 4 cycles
tERR(4per)
-175
175
ps
Cumulative error across 5 cycles
tERR(5per)
-188
188
ps
Cumulative error across 6 cycles
tERR(6per)
-200
200
ps
Cumulative error across 7 cycles
tERR(7per)
-209
209
ps
Cumulative error across 8 cycles
tERR(8per)
-217
217
ps
Cumulative error across 9 cycles
tERR(9per)
-224
224
ps
Cumulative error across 10 cycles
tERR(10per)
-231
231
ps
Cumulative error across 11 cycles
tERR(11per)
-237
237
ps
Cumulative error across 12 cycles
tERR(12per)
-242
242
ps
Cumulative error across n = 13, 14 . . . 49, 50 cycles
tERR(nper)
tERR(nper)min = (1 + 0.68ln(n)) * tJIT(per)min
tERR(nper)max = (1 + 0.68ln(n)) * tJIT(per)max
ps
Data Timing
DQS, DQS# to DQ skew, per group, per access
tDQSQ
-
150
ps
DQ output hold time from DQS, DQS#
tQH
0.38
-
tCK(avg)
DQ low-impedance time from CK, CK#
tLZ(DQ)
-600
300
ps
DQ high impedance time from CK, CK#
tHZ(DQ)
-
300
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC175
25
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC150
75
ps
Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) levels
tDH(base)
DC100
100
ps
DQ and DM Input pulse width for each input
tDIPW
490
ps
Data Strobe Timing
DQS,DQS# differential READ Preamble
tRPRE
0.9
Note 19
tCK(avg)
DQS, DQS# differential READ Postamble
tRPST
0.3
Note 11
tCK(avg)
DQS, DQS# differential output high time
tQSH
0.38
-
tCK(avg)
DQS, DQS# differential output low time
tQSL
0.38
-
tCK(avg)
DQS, DQS# differential WRITE Preamble
tWPRE
0.9
-
tCK(avg)
DQS, DQS# differential WRITE Postamble
tWPST
0.3
-
tCK(avg)
DQS, DQS# rising edge output access time from rising CK, CK#
tDQSCK
-300
300
tCK(avg)
DQS and DQS# low-impedance time
(Referenced from RL - 1)
tLZ(DQS)
-600
300
tCK(avg)
DQS and DQS# high-impedance time
(Referenced from RL + BL/2)
tHZ(DQS)
-
300
tCK(avg)
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
tCK(avg)
DQS, DQS# differential input high pulse width
tDQSH
0.45
0.55
tCK(avg)
DQS, DQS# rising edge to CK, CK# rising edge
tDQSS
-0.25
0.25
tCK(avg)
DQS, DQS# falling edge setup time to CK, CK# rising edge
tDSS
0.2
-
tCK(avg)
DQS, DQS# falling edge hold time from CK, CK# rising edge
tDSH
0.2
-
tCK(avg)
Command and Address Timing
DLL locking time
tDLLK
512
-
nCK
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 17
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Internal READ Command to PRECHARGE Command delay
tRTP
tRTPmin.: max(4nCK, 7.5ns)
tRTPmax.: -
Delay from start of internal write
transaction to internal read command
tWTR
tWTRmin.: max(4nCK, 7.5ns)
tWTRmax.:
WRITE recovery time
tWR
15
-
ns
Mode Register Set command cycle time
tMRD
4
-
nCK
Mode Register Set command update delay
tMOD
tMODmin.: max(12nCK, 15ns)
tMODmax.:
ACT to internal read or write delay time
tRCD
PRE command period
tRP
ACT to ACT or REF command period
tRC
CAS# to CAS# command delay
tCCD
4
-
nCK
Auto precharge write recovery + precharge time
tDAL(min)
WR + roundup(tRP / tCK(avg))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
nCK
ACTIVE to PRECHARGE command period
tRAS
Standard Speed Bins
ACTIVE to ACTIVE command period for 1KB page size
tRRD
max(4nCK, 7.5ns)
-
ACTIVE to ACTIVE command period for 2KB page size
tRRD
tRRDmin.: max(4nCK, 10ns)
tRRDmax.:
Four activate window for 1KB page size
tFAW
37.5
-
ns
Four activate window for 2KB page size
tFAW
50
-
ns
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base)
125
-
ps
Command and Address hold time from CK, CK#
referenced to Vih(dc) / Vil(dc) levels
tIH(base)
200
-
ps
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base) AC150
125+150
-
ps
Control and Address Input pulse width for each input
tIPW
780
-
ps
Calibration Timing
Power-up and RESET calibration time
tZQinit
512
-
nCK
Normal operation Full calibration time
tZQoper
256
-
nCK
Normal operation Short calibration time
tZQCS
64
-
nCK
Reset Timing
Exit Reset from CKE HIGH to a valid command
tXPR
tXPRmin.: max(5nCK, tRFC(min) + 10ns)
tXPRmax.: -
Self Refresh Timings
Exit Self Refresh to commands not requiring a locked DLL
tXS
tXSmin.: max(5nCK, tRFC(min) + 10ns)
tXSmax.: -
Exit Self Refresh to commands requiring a locked DLL
tXSDLL
tXSDLLmin.: tDLLK(min)
tXSDLLmax.: -
nCK
Minimum CKE low width for Self Refresh entry to exit timing
tCKESR
tCKESRmin.: tCKE(min) + 1 nCK
tCKESRmax.: -
Valid Clock Requirement after Self Refresh Entry (SRE)
or Power-Down Entry (PDE)
tCKSRE
tCKSREmin.: max(5 nCK, 10 ns)
tCKSREmax.: -
Valid Clock Requirement before Self Refresh Exit (SRX)
or Power-Down Exit (PDX) or Reset Exit
tCKSRX
tCKSRXmin.: max(5 nCK, 10 ns)
tCKSRXmax.: -
Power Down Timings
Exit Power Down with DLL on to any valid command;
Exit Precharge Power Down with DLL frozen to commands
not requiring a locked DLL
tXP
tXPmin.: max(3nCK, 7.5ns)
tXPmax.: -
Exit Precharge Power Down with DLL frozen to commands
requiring a locked DLL
tXPDLL
tXPDLLmin.: max(10nCK, 24ns)
tXPDLLmax.: -
CKE minimum pulse width
tCKE
tCKEmin.: max(3nCK 5.625ns)
tCKEmax.: -
Command pass disable delay
tCPDED
tCPDEDmin.: 1
tCPDEDmin.: -
nCK
Power Down Entry to Exit Timing
tPD
tPDmin.: tCKE(min)
tPDmax.: 9*tREFI
Timing of ACT command to Power Down entry
tACTPDEN
tACTPDENmin.: 1
tACTPDENmax.: -
nCK
Timing of PRE or PREA command to Power Down entry
tPRPDEN
tPRPDENmin.: 1
tPRPDENmax.: -
nCK
Timing of RD/RDA command to Power Down entry
tRDPDEN
tRDPDENmin.: RL+4+1
tRDPDENmax.: -
nCK
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 18
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Timing of WR command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRPDEN
tWRPDENmin.: WL + 4 + (tWR / tCK(avg))
tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRAPDEN
tWRAPDENmin.: WL+4+WR+1
tWRAPDENmax.: -
nCK
Timing of WR command to Power Down entry (BC4MRS)
tWRPDEN
tWRPDENmin.: WL + 2 + (tWR / tCK(avg))tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BC4MRS)
tWRAPDEN
tWRAPDENmin.: WL + 2 +WR + 1
tWRAPDENmax.: -
nCK
Timing of REF command to Power Down entry
tREFPDEN
tREFPDENmin.: 1
tREFPDENmax.: -
nCK
Timing of MRS command to Power Down entry
tMRSPDEN
tMRSPDENmin.: tMOD(min)
tMRSPDENmax.: -
ODT Timings
ODT high time without write command or
with write command and BC4
ODTH4
ODTH4min.: 4
ODTH4max.: -
nCK
ODT high time with Write command and BL8
ODTH8
ODTH8min.: 6
ODTH8max.: -
nCK
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONPD
2
8.5
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFPD
2
8.5
ns
RTT turn-on
tAON
-300
300
ps
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tAOF
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
tCK(avg)
Write Leveling Timings
First DQS/DQS# rising edge after
write leveling mode is programmed
tWLMRD
40
-
nCK
DQS/DQS# delay after write leveling mode is programmed
tWLDQSEN
25
-
nCK
Write leveling setup time from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLS
245
-
ps
Write leveling hold time from rising DQS, DQS#
crossing to rising CK, CK# crossing
tWLH
245
-
ps
Write leveling output delay
tWLO
0
9
ns
Write leveling output error
tWLOE
0
2
ns
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 19
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1333MHz)
Parameter
Symbol
DDR3-1333
Units
Notes
Min.
Max.
Clock Timing
Minimum Clock Cycle Time (DLL off mode)
tCK (DLL_OFF)
8
-
ns
Average Clock Period
tCK(avg)
Refer to "Standard Speed Bins)
ps
Average high pulse width
tCH(avg)
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
tCK(avg)
Absolute Clock Period
tCK(abs)
Min.: tCK(avg)min + tJIT(per)min
Max.: tCK(avg)max + tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
0.43
-
tCK(avg)
Absolute clock LOW pulse width
tCL(abs)
0.43
-
tCK(avg)
Clock Period Jitter
JIT(per)
-80
80
ps
Clock Period Jitter during DLL locking period
JIT(per, lck)
-70
70
ps
Cycle to Cycle Period Jitter
tJIT(cc)
160
160
ps
Cycle to Cycle Period Jitter during DLL locking period
JIT(cc, lck)
140
140
ps
Duty Cycle Jitter
tJIT(duty)
-
-
ps
Cumulative error across 2 cycles
tERR(2per)
-118
118
ps
Cumulative error across 3 cycles
tERR(3per)
-140
140
ps
Cumulative error across 4 cycles
tERR(4per)
-155
155
ps
Cumulative error across 5 cycles
tERR(5per)
-168
168
ps
Cumulative error across 6 cycles
tERR(6per)
-177
177
ps
Cumulative error across 7 cycles
tERR(7per)
-186
186
ps
Cumulative error across 8 cycles
tERR(8per)
-193
193
ps
Cumulative error across 9 cycles
tERR(9per)
-200
200
ps
Cumulative error across 10 cycles
tERR(10per)
-205
205
ps
Cumulative error across 11 cycles
tERR(11per)
-210
210
ps
Cumulative error across 12 cycles
tERR(12per)
-215
215
ps
Cumulative error across n = 13, 14 . . . 49, 50 cycles
tERR(nper)
tERR(nper)min = (1 + 0.68ln(n)) * tJIT(per)min
tERR(nper)max = (1 + 0.68ln(n)) * tJIT(per)max
ps
Data Timing
DQS, DQS# to DQ skew, per group, per access
tDQSQ
-
125
ps
DQ output hold time from DQS, DQS#
tQH
0.38
-
tCK(avg)
DQ low-impedance time from CK, CK#
tLZ(DQ)
-500
250
ps
DQ high impedance time from CK, CK#
tHZ(DQ)
-
250
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC175
-
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC150
30
ps
Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) levels
tDH(base)
DC100
65
ps
DQ and DM Input pulse width for each input
tDIPW
400
-
ps
Data Strobe Timing
DQS,DQS# differential READ Preamble
tRPRE
0.9
Note 19
tCK(avg)
DQS, DQS# differential READ Postamble
tRPST
0.3
Note 11
tCK(avg)
DQS, DQS# differential output high time
tQSH
0.4
-
tCK(avg)
DQS, DQS# differential output low time
tQSL
0.4
-
tCK(avg)
DQS, DQS# differential WRITE Preamble
tWPRE
0.9
-
tCK(avg)
DQS, DQS# differential WRITE Postamble
tWPST
0.3
-
tCK(avg)
DQS, DQS# rising edge output access time from rising CK, CK#
tDQSCK
-255
255
tCK(avg)
DQS and DQS# low-impedance time
(Referenced from RL - 1)
tLZ(DQS)
-500
250
tCK(avg)
DQS and DQS# high-impedance time
(Referenced from RL + BL/2)
tHZ(DQS)
-
250
tCK(avg)
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
tCK(avg)
DQS, DQS# differential input high pulse width
tDQSH
0.45
0.55
tCK(avg)
DQS, DQS# rising edge to CK, CK# rising edge
tDQSS
-0.25
0.25
tCK(avg)
DQS, DQS# falling edge setup time to CK, CK# rising edge
tDSS
0.2
-
tCK(avg)
DQS, DQS# falling edge hold time from CK, CK# rising edge
tDSH
0.2
-
tCK(avg)
Command and Address Timing
DLL locking time
tDLLK
512
-
nCK
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 20
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Internal READ Command to PRECHARGE Command delay
tRTP
tRTPmin.: max(4nCK, 7.5ns)
tRTPmax.: -
Delay from start of internal write
transaction to internal read command
tWTR
tWTRmin.: max(4nCK, 7.5ns)
tWTRmax.:
WRITE recovery time
tWR
15
-
ns
Mode Register Set command cycle time
tMRD
4
-
nCK
Mode Register Set command update delay
tMOD
tMODmin.: max(12nCK, 15ns)
tMODmax.:
ACT to internal read or write delay time
tRCD
PRE command period
tRP
ACT to ACT or REF command period
tRC
CAS# to CAS# command delay
tCCD
4
nCK
Auto precharge write recovery + precharge time
tDAL(min)
WR + roundup(tRP / tCK(avg))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
nCK
ACTIVE to PRECHARGE command period
tRAS
Standard Speed Bins
ACTIVE to ACTIVE command period for 1KB page size
tRRD
tRRDmin.: max(4nCK, 6ns)
tRRDmax.:
ACTIVE to ACTIVE command period for 2KB page size
tRRD
tRRDmin.: max(4nCK, 7.5ns)
tRRDmax.:
Four activate window for 1KB page size
tFAW
30
0
ns
Four activate window for 2KB page size
tFAW
45
0
ns
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base)
65
-
ps
Command and Address hold time from CK, CK#
referenced to Vih(dc) / Vil(dc) levels
tIH(base)
140
-
ps
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base) AC150
65+125
-
ps
Control and Address Input pulse width for each input
tIPW
620
-
ps
Calibration Timing
Power-up and RESET calibration time
tZQinit
512
-
nCK
Normal operation Full calibration time
tZQoper
256
-
nCK
Normal operation Short calibration time
tZQCS
64
-
nCK
Reset Timing
Exit Reset from CKE HIGH to a valid command
tXPR
tXPRmin.: max(5nCK, tRFC(min) + 10ns)
tXPRmax.: -
Self Refresh Timings
Exit Self Refresh to commands not requiring a locked DLL
tXS
tXSmin.: max(5nCK, tRFC(min) + 10ns)
tXSmax.: -
Exit Self Refresh to commands requiring a locked DLL
tXSDLL
tXSDLLmin.: tDLLK(min)
tXSDLLmax.: -
nCK
Minimum CKE low width for Self Refresh entry to exit timing
tCKESR
tCKESRmin.: tCKE(min) + 1 nCK
tCKESRmax.: -
Valid Clock Requirement after Self Refresh Entry (SRE)
or Power-Down Entry (PDE)
tCKSRE
tCKSREmin.: max(5 nCK, 10 ns)
tCKSREmax.: -
Valid Clock Requirement before Self Refresh Exit (SRX)
or Power-Down Exit (PDX) or Reset Exit
tCKSRX
tCKSRXmin.: max(5 nCK, 10 ns)
tCKSRXmax.: -
Power Down Timings
Exit Power Down with DLL on to any valid command;
Exit Precharge Power Down with DLL frozen to commands
not requiring a locked DLL
tXP
tXPmin.: max(3nCK, 6ns)
tXPmax.: -
Exit Precharge Power Down with DLL frozen to commands
requiring a locked DLL
tXPDLL
tXPDLLmin.: max(10nCK, 24ns)
tXPDLLmax.: -
CKE minimum pulse width
tCKE
tCKEmin.: max(3nCK ,5.625ns)
tCKEmax.: -
Command pass disable delay
tCPDED
tCPDEDmin.: 1
tCPDEDmin.: -
nCK
Power Down Entry to Exit Timing
tPD
tPDmin.: tCKE(min)
tPDmax.: 9*tREFI
Timing of ACT command to Power Down entry
tACTPDEN
tACTPDENmin.: 1
tACTPDENmax.: -
nCK
Timing of PRE or PREA command to Power Down entry
tPRPDEN
tPRPDENmin.: 1
tPRPDENmax.: -
nCK
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 21
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Timing of RD/RDA command to Power Down entry
tRDPDEN
tRDPDENmin.: RL+4+1
tRDPDENmax.: -
nCK
Timing of WR command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRPDEN
tWRPDENmin.: WL + 4 + (tWR / tCK(avg))
tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRAPDEN
tWRAPDENmin.: WL+4+WR+1
tWRAPDENmax.: -
nCK
Timing of WR command to Power Down entry (BC4MRS)
tWRPDEN
tWRPDENmin.: WL + 2 + (tWR / tCK(avg))tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BC4MRS)
tWRAPDEN
tWRAPDENmin.: WL + 2 +WR + 1
tWRAPDENmax.: -
nCK
Timing of REF command to Power Down entry
tREFPDEN
tREFPDENmin.: 1
tREFPDENmax.: -
nCK
Timing of MRS command to Power Down entry
tMRSPDEN
tMRSPDENmin.: tMOD(min)
tMRSPDENmax.: -
ODT Timings
ODT high time without write command or
with write command and BC4
ODTH4
ODTH4min.: 4
ODTH4max.: -
nCK
ODT high time with Write command and BL8
ODTH8
ODTH8min.: 6
ODTH8max.: -
nCK
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONPD
2
8.5
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFPD
2
8.5
ns
RTT turn-on
tAON
-250
250
ps
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tAOF
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
tCK(avg)
Write Leveling Timings
First DQS/DQS# rising edge after
write leveling mode is programmed
tWLMRD
40
-
nCK
DQS/DQS# delay after write leveling mode is programmed
tWLDQSEN
25
-
nCK
Write leveling setup time from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLS
195
-
ps
Write leveling hold time from rising DQS, DQS#
crossing to rising CK, CK# crossing
tWLH
195
-
ps
Write leveling output delay
tWLO
0
9
ns
Write leveling output error
tWLOE
0
2
ns
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 22
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1600MHz)
Parameter
Symbol
DDR3-1600
Units
Notes
Min.
Max.
Clock Timing
Minimum Clock Cycle Time (DLL off mode)
tCK (DLL_OFF)
8
-
ns
Average Clock Period
tCK(avg)
Refer to "Standard Speed Bins)
ps
Average high pulse width
tCH(avg)
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
tCK(avg)
Absolute Clock Period
tCK(abs)
Min.: tCK(avg)min + tJIT(per)min
Max.: tCK(avg)max + tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
0.43
-
tCK(avg)
Absolute clock LOW pulse width
tCL(abs)
0.43
-
tCK(avg)
Clock Period Jitter
JIT(per)
-70
70
ps
Clock Period Jitter during DLL locking period
JIT(per, lck)
-60
60
ps
Cycle to Cycle Period Jitter
tJIT(cc)
140
140
ps
Cycle to Cycle Period Jitter during DLL locking period
JIT(cc, lck)
120
120
ps
Duty Cycle Jitter
tJIT(duty)
-
-
ps
Cumulative error across 2 cycles
tERR(2per)
-103
103
ps
Cumulative error across 3 cycles
tERR(3per)
-122
122
ps
Cumulative error across 4 cycles
tERR(4per)
-136
136
ps
Cumulative error across 5 cycles
tERR(5per)
-147
147
ps
Cumulative error across 6 cycles
tERR(6per)
-155
155
ps
Cumulative error across 7 cycles
tERR(7per)
-163
163
ps
Cumulative error across 8 cycles
tERR(8per)
-169
169
ps
Cumulative error across 9 cycles
tERR(9per)
-175
175
ps
Cumulative error across 10 cycles
tERR(10per)
-180
180
ps
Cumulative error across 11 cycles
tERR(11per)
-184
184
ps
Cumulative error across 12 cycles
tERR(12per)
-188
188
ps
Cumulative error across n = 13, 14 . . . 49, 50 cycles
tERR(nper)
tERR(nper)min = (1 + 0.68ln(n)) * tJIT(per)min
tERR(nper)max = (1 + 0.68ln(n)) * tJIT(per)max
ps
Data Timing
DQS, DQS# to DQ skew, per group, per access
tDQSQ
-
100
ps
DQ output hold time from DQS, DQS#
tQH
0.38
-
tCK(avg)
DQ low-impedance time from CK, CK#
tLZ(DQ)
-450
225
ps
DQ high impedance time from CK, CK#
tHZ(DQ)
-
225
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC175
-
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC150
10
ps
Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) levels
tDH(base)
DC100
45
ps
DQ and DM Input pulse width for each input
tDIPW
360
-
ps
Data Strobe Timing
DQS,DQS# differential READ Preamble
tRPRE
0.9
Note 19
tCK(avg)
DQS, DQS# differential READ Postamble
tRPST
0.3
Note 11
tCK(avg)
DQS, DQS# differential output high time
tQSH
0.4
-
tCK(avg)
DQS, DQS# differential output low time
tQSL
0.4
-
tCK(avg)
DQS, DQS# differential WRITE Preamble
tWPRE
0.9
-
tCK(avg)
DQS, DQS# differential WRITE Postamble
tWPST
0.3
-
tCK(avg)
DQS, DQS# rising edge output access time from rising CK, CK#
tDQSCK
-255
255
tCK(avg)
DQS and DQS# low-impedance time
(Referenced from RL - 1)
tLZ(DQS)
-450
225
tCK(avg)
DQS and DQS# high-impedance time
(Referenced from RL + BL/2)
tHZ(DQS)
-
225
tCK(avg)
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
tCK(avg)
DQS, DQS# differential input high pulse width
tDQSH
0.45
0.55
tCK(avg)
DQS, DQS# rising edge to CK, CK# rising edge
tDQSS
-0.27
0.27
tCK(avg)
DQS, DQS# falling edge setup time to CK, CK# rising edge
tDSS
0.18
-
tCK(avg)
DQS, DQS# falling edge hold time from CK, CK# rising edge
tDSH
0.18
-
tCK(avg)
Command and Address Timing
DLL locking time
tDLLK
512
-
nCK
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 23
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Internal READ Command to PRECHARGE Command delay
tRTP
tRTPmin.: max(4nCK, 7.5ns)
tRTPmax.: -
Delay from start of internal write
transaction to internal read command
tWTR
tWTRmin.: max(4nCK, 7.5ns)
tWTRmax.:
WRITE recovery time
tWR
15
-
ns
Mode Register Set command cycle time
tMRD
4
-
nCK
Mode Register Set command update delay
tMOD
tMODmin.: max(12nCK, 15ns)
tMODmax.:
ACT to internal read or write delay time
tRCD
PRE command period
tRP
ACT to ACT or REF command period
tRC
CAS# to CAS# command delay
tCCD
4
nCK
Auto precharge write recovery + precharge time
tDAL(min)
WR + roundup(tRP / tCK(avg))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
nCK
ACTIVE to PRECHARGE command period
tRAS
Standard Speed Bins
ACTIVE to ACTIVE command period for 1KB page size
tRRD
tRRDmin.: max(4nCK, 6ns)
tRRDmax.:
ACTIVE to ACTIVE command period for 2KB page size
tRRD
tRRDmin.: max(4nCK, 7.5ns)
tRRDmax.:
Four activate window for 1KB page size
tFAW
30
-
ns
Four activate window for 2KB page size
tFAW
40
-
ns
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base)
45
-
ps
Command and Address hold time from CK, CK#
referenced to Vih(dc) / Vil(dc) levels
tIH(base)
120
-
ps
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base) AC150
170
-
ps
Control and Address Input pulse width for each input
tIPW
560
-
ps
Calibration Timing
Power-up and RESET calibration time
tZQinit
512
-
nCK
Normal operation Full calibration time
tZQoper
256
-
nCK
Normal operation Short calibration time
tZQCS
64
-
nCK
Reset Timing
Exit Reset from CKE HIGH to a valid command
tXPR
tXPRmin.: max(5nCK, tRFC(min) + 10ns)
tXPRmax.: -
Self Refresh Timings
Exit Self Refresh to commands not requiring a locked DLL
tXS
tXSmin.: max(5nCK, tRFC(min) + 10ns)
tXSmax.: -
Exit Self Refresh to commands requiring a locked DLL
tXSDLL
tXSDLLmin.: tDLLK(min)
tXSDLLmax.: -
nCK
Minimum CKE low width for Self Refresh entry to exit timing
tCKESR
tCKESRmin.: tCKE(min) + 1 nCK
tCKESRmax.: -
Valid Clock Requirement after Self Refresh Entry (SRE)
or Power-Down Entry (PDE)
tCKSRE
tCKSREmin.: max(5 nCK, 10 ns)
tCKSREmax.: -
Valid Clock Requirement before Self Refresh Exit (SRX)
or Power-Down Exit (PDX) or Reset Exit
tCKSRX
tCKSRXmin.: max(5 nCK, 10 ns)
tCKSRXmax.: -
Power Down Timings
Exit Power Down with DLL on to any valid command;
Exit Precharge Power Down with DLL frozen to commands
not requiring a locked DLL
tXP
tXPmin.: max(3nCK, 6ns)
tXPmax.: -
Exit Precharge Power Down with DLL frozen to commands
requiring a locked DLL
tXPDLL
tXPDLLmin.: max(10nCK, 24ns)
tXPDLLmax.: -
CKE minimum pulse width
tCKE
tCKEmin.: max(3nCK ,5ns)
tCKEmax.: -
Command pass disable delay
tCPDED
tCPDEDmin.: 1
tCPDEDmin.: -
nCK
Power Down Entry to Exit Timing
tPD
tPDmin.: tCKE(min)
tPDmax.: 9*tREFI
Timing of ACT command to Power Down entry
tACTPDEN
tACTPDENmin.: 1
tACTPDENmax.: -
nCK
Timing of PRE or PREA command to Power Down entry
tPRPDEN
tPRPDENmin.: 1
tPRPDENmax.: -
nCK
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 24
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Timing of RD/RDA command to Power Down entry
tRDPDEN
tRDPDENmin.: RL+4+1
tRDPDENmax.: -
nCK
Timing of WR command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRPDEN
tWRPDENmin.: WL + 4 + (tWR / tCK(avg))
tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRAPDEN
tWRAPDENmin.: WL+4+WR+1
tWRAPDENmax.: -
nCK
Timing of WR command to Power Down entry (BC4MRS)
tWRPDEN
tWRPDENmin.: WL + 2 + (tWR / tCK(avg))tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BC4MRS)
tWRAPDEN
tWRAPDENmin.: WL + 2 +WR + 1
tWRAPDENmax.: -
nCK
Timing of REF command to Power Down entry
tREFPDEN
tREFPDENmin.: 1
tREFPDENmax.: -
nCK
Timing of MRS command to Power Down entry
tMRSPDEN
tMRSPDENmin.: tMOD(min)
tMRSPDENmax.: -
ODT Timings
ODT high time without write command or
with write command and BC4
ODTH4
ODTH4min.: 4
ODTH4max.: -
nCK
ODT high time with Write command and BL8
ODTH8
ODTH8min.: 6
ODTH8max.: -
nCK
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONPD
2
8.5
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFPD
2
8.5
ns
RTT turn-on
tAON
-225
225
ps
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tAOF
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
tCK(avg)
Write Leveling Timings
First DQS/DQS# rising edge after
write leveling mode is programmed
tWLMRD
40
-
nCK
DQS/DQS# delay after write leveling mode is programmed
tWLDQSEN
25
-
nCK
Write leveling setup time from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLS
165
-
ps
Write leveling hold time from rising DQS, DQS#
crossing to rising CK, CK# crossing
tWLH
165
-
ps
Write leveling output delay
tWLO
0
7.5
ns
Write leveling output error
tWLOE
0
2
ns
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 25
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
Detail B
Detail A
2.0
(0.079)
6.0
(0.236)
1 203
67.60 +/- 0.15
(2.661 +/- 0.006)
20.0
(0.787)
30.0 +/- 0.15
(1.181 +/- 0.006)
63.60
(2.504)
2x O1.80
(0.071)
21.0
(0.827) 39.0
(1.535)
1.35
(0.053)
4.0
(0.157)
1.00 +0.07/-0.1
2.7 max.
(0.150 max.)
2x 4.0 +/- 0.1
(0.157 +/- 0.004)
3.0
(0.118)
1.5
(0.059)
1.0
(0.039) 0.6
(0.024)
0.45 +/- 0.03
(0.018 +/- 0.001)
2.55
(0.100)
0.25 max.
(0.010 max.)
Detail A Detail B
Units: Millimeters (Inches)
Note: Device position and scale are only for reference.
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 26
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Detail B
Detail A
2.0
(0.079)
6.0
(0.236)
1 203
67.60 +/- 0.15
(2.661 +/- 0.006)
20.0
(0.787)
30.0 +/- 0.15
(1.181 +/- 0.006)
63.60
(2.504)
2x O1.80
(0.071)
21.0
(0.827) 39.0
(1.535)
1.35
(0.053)
4.0
(0.157)
1.00 +0.07/-0.1
3.8 max.
(0.150 max.)
2x 4.0 +/- 0.1
(0.157 +/- 0.004)
3.0
(0.118)
1.5
(0.059)
1.0
(0.039) 0.6
(0.024)
0.45 +/- 0.03
(0.018 +/- 0.001)
2.55
(0.100)
0.25 max.
(0.010 max.)
Detail A Detail B
Units: Millimeters (Inches)
Note: Device position and scale are only for reference.
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 27
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
Detail B
Detail A
2.0
(0.079)
6.0
(0.236)
1 203
67.60 +/- 0.15
(2.661 +/- 0.006)
20.0
(0.787)
30.0 +/- 0.15
(1.181 +/- 0.006)
63.60
(2.504)
2x O1.80
(0.071)
21.0
(0.827) 39.0
(1.535)
1.35
(0.053)
4.0
(0.157)
1.00 +0.07/-0.1
3.8 max.
(0.150 max.)
2x 4.0 +/- 0.1
(0.157 +/- 0.004)
3.0
(0.118)
1.5
(0.059)
1.0
(0.039) 0.6
(0.024)
0.45 +/- 0.03
(0.018 +/- 0.001)
2.55
(0.100)
0.25 max.
(0.010 max.)
Detail A Detail B
Units: Millimeters (Inches)
Note: Device position and scale are only for reference.
NT1GC64BH4B0PS / NT2GC64B88B0NS / NT4GC64B8HB0NS
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SO-DIMM
REV 1.1 28
08/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Revision Log
Rev
Date
Modification
0.1
01/2010
Preliminary Release
0.5
05/2010
Preliminary Release 2
1.0
05/2010
Official Release
1.1
08/2010
Official Release
Nanya Technology Corporation
Hwa Ya Technology Park 669
Fu Hsing 3rd Rd., Kueishan,
Taoyuan, 333, Taiwan, R.O.C.
Tel: +886-3-328-1688
Please visit our home page for more information: www.nanya.com
Printed in Taiwan
© 2010
