FLM6472-18F C-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: add = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM6472-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 W Total Power Dissipation Tc = 25C PT Storage Temperature Tstg -65 to +175 C Channel Temperature Tch 175 C Limit Typ. Max. Unit Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 48.0 and -8.4 mA respectively with gate resistance of 25. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 7.5 11.25 A Transconductance gm VDS = 5V, IDS = 4875mA - 7500 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0 V IGS = -250A -5.0 - - V 42.0 43.0 - dBm 8.5 9.5 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Idsr add VDS =10V, IDS = 0.65 IDSS (Typ.), f = 6.4 ~ 7.2 GHz, ZS=ZL= 50 ohm - 4875 6000 mA - 37 - % - - 0.6 dB -44 -46 - dBc Gain Flatness G 3rd Order Intermodulation Distortion IM3 f = 7.2 GHz, f = 10 MHz 2-Tone Test Pout = 32.0dBm S.C.L. Thermal Resistance Rth Channel to Case - 1.6 1.8 C/W Tch 10V x Idsr x Rth - - 80 C Channel Temperature Rise CASE STYLE: IK Edition 1.2 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM6472-18F C-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 7.2 GHz f2 = 7.21 GHz 2-tone test 38 80 60 40 20 0 50 100 150 36 -20 Pout -25 -30 34 IM3 32 IM3 (dBc) 100 Output Power (S.C.L.) (dBm) Total Power Dissipation (W) POWER DERATING CURVE -35 30 -40 28 -45 26 -50 24 -55 200 Case Temperature (C) 19 21 23 25 27 29 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. INPUT POWER VDS=10V P1dB 45 Pin=34.5dBm 44 43 32.5dBm 42 41 30.5dBm 40 39 Output Power (dBm) Output Power (dBm) 45 28.5dBm 38 VDS=10V f = 6.8 GHz 43 Pout 41 45 39 37 30 add 15 35 0 6.4 6.6 6.8 7.0 23 7.2 25 27 29 31 33 Input Power (dBm) Frequency (GHz) 2 35 add (%) OUTPUT POWER vs. FREQUENCY FLM6472-18F C-Band Internally Matched FET S11 S22 +j50 +j100 6.2 GHz 6.2 GHz +j250 6.6 6.4 6.8 25 7.4 50 7.0 7.0 7.0 6.6 0 6.8 250 180 7.0 7.4 6.8 6.6 1 6.4 -j250 6.4 0.1 6.2 GHz -j25 2 3 4 0 SCALE FOR |S21| 6.2 GHz 6.6 7.2 -j10 7.2 6.8 7.2 7.4 7.4 7.2 6.4 -j100 SCALE FOR |S12| +j25 +j10 S21 S12 +90 0.2 -90 -j50 FREQUENCY (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 4875mA S21 S12 MAG ANG MAG ANG 6200 .517 101.5 3.232 -103.7 .062 6300 .521 88.0 3.197 -118.5 6400 .524 75.7 3.135 6500 .519 64.3 6600 .507 6700 S11 S22 MAG ANG -144.7 .453 89.3 .064 -159.2 .445 81.8 -130.9 .066 -170.7 .432 74.0 3.075 -144.6 .068 -176.9 .424 65.8 52.6 3.108 -158.3 .071 164.6 .410 55.5 .490 40.7 3.111 -171.2 .074 152.8 .391 43.5 6800 .463 27.1 3.149 175.1 .079 139.3 .369 28.7 6900 .426 11.1 3.226 160.5 .086 125.2 .339 11.3 7000 .385 -9.3 3.308 145.2 .090 110.1 .301 -9.4 7100 .345 -33.6 3.366 129.9 .094 95.4 .259 -31.8 7200 .326 -66.5 3.378 112.2 .096 77.0 .202 -59.4 7300 .349 -102.2 3.287 93.9 .092 57.5 .141 -95.5 7400 .411 -134.0 3.133 75.3 .087 39.6 .098 -149.0 3 FLM6472-18F C-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IK" Metal-Ceramic Hermetic Package 0.1 (0.004) 2 3 2.40.15 (0.094) 2.0 Min. (0.079) 4-R 1.30.15 (0.051) 17.40.3 (0.685) 8.00.2 (0.315) 1 0.6 (0.024) 5.5 Max. (0.217) 1.4 (0.055) 14.9 (0.587) 20.40.3 (0.803) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) 240.5 (0.945) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com * Do not put this product into the mouth. Eudyna Devices Europe Ltd. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4