FEATURES
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Low IM3= -46dBc@Po = 32.0dBm
• Broad Band: 6.4 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
1
Edition 1.2
August 2004
FLM6472-18F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
83.3
-65 to +175
175
Tc = 25°C
V
V
W
°C
°C
PT
Tstg
Tch
Condition Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 48.0 and -8.4 mA respectively with
gate resistance of 25Ω.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS - 7.5 11.25
- 7500 -
-0.5 -1.5 -3.0
-5.0 - -
8.5 9.5 -
-37-
42.0 43.0 -
VDS = 5V, IDS = 250mA
VDS = 5V, IDS = 4875mA
VDS = 5V, VGS = 0V
IGS = -250µA
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 6.4 ~ 7.2 GHz,
ZS=ZL= 50 ohm
f = 7.2 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 32.0dBm S.C.L.
A
mS
V
dB
%
-44 -46 - dBc
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Drain Current - 4875 6000 mA
Idsr
IM3
ηadd
Gain Flatness --±0.6 dB∆G
Test Conditions Unit
Limit
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Channel to Case
Thermal Resistance - 1.6 1.8 °C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IK
10V x Idsr x Rth
Channel Temperature Rise --80 °C
∆Tch
DESCRIPTION
The FLM6472-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLM6472-18F
C-Band Internally Matched FET
POWER DERATING CURVE
500 100 150 200
Case Temperature (°C)
100
80
60
40
20
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 7.2 GHz
f2 = 7.21 GHz
2-tone test
19 21 23 25 27 29
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
34
36
30
32
38
24
26
28
-55
-50
-45
-40
-35
-30
-25
-20
Output Power (S.C.L.) (dBm)
IM3
Pout
IM3 (dBc)
OUTPUT POWER vs. FREQUENCY
Pin=34.5dBm
32.5dBm
30.5dBm
28.5dBm
6.66.4 6.8 7.27.0
Frequency (GHz)
38
39
40
41
42
43
44
45
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 6.8 GHz
2523 27 29 31 33 35
Input Power (dBm)
39
41
43
45
37
35
30
45
15
0
Output Power (dBm)
ηadd
Pout
ηadd (%)
3
FLM6472-18F
C-Band Internally Matched FET
S-PARAMETERS
VDS = 10V, IDS = 4875mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
6200 .517 101.5 3.232 -103.7 .062 -144.7 .453 89.3
6300 .521 88.0 3.197 -118.5 .064 -159.2 .445 81.8
6400 .524 75.7 3.135 -130.9 .066 -170.7 .432 74.0
6500 .519 64.3 3.075 -144.6 .068 -176.9 .424 65.8
6600 .507 52.6 3.108 -158.3 .071 164.6 .410 55.5
6700 .490 40.7 3.111 -171.2 .074 152.8 .391 43.5
6800 .463 27.1 3.149 175.1 .079 139.3 .369 28.7
6900 .426 11.1 3.226 160.5 .086 125.2 .339 11.3
7000 .385 -9.3 3.308 145.2 .090 110.1 .301 -9.4
7100 .345 -33.6 3.366 129.9 .094 95.4 .259 -31.8
7200 .326 -66.5 3.378 112.2 .096 77.0 .202 -59.4
7300 .349 -102.2 3.287 93.9 .092 57.5 .141 -95.5
7400 .411 -134.0 3.133 75.3 .087 39.6 .098 -149.0
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180°
+90°
0°
-90°
S21
S12
0.2
0.1
SCALE FOR |S12|
50Ω
25 250
SCALE FOR |S21|
123
4
7.4
7.4
6.6
6.6
6.2 GHz
6.2 GHz
6.4
6.4
6.8
6.8
7.0
7.0
7.2
7.2
7.4
7.4
6.6
6.6
6.2 GHz
6.2 GHz
6.8
6.8
7.0 7.0
7.2
7.2
6.4
6.4
4
FLM6472-18F
C-Band Internally Matched FET
4-R 1.3±0.15
(0.051)
0.6
(0.024)
14.9
(0.587)
20.4±0.3
(0.803)
24±0.5
(0.945)
5.5 Max.
(0.217)
2.4±0.15
(0.094)
0.1
(0.004)
1.4
(0.055)
17.4±0.3
(0.685)
8.0±0.2
(0.315)
2.0 Min.
(0.079)
2.0 Min.
(0.079)
Case Style "IK"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
1
3
2
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
