qa peW 3975081 oo17334 oO I nn ee 3875081 GE SOLID STATE O1E 17334 D 7-33-37 Darlington Power Transistors . T1P115, TIP116, TIP117 File Number 1387 2-Ampere P-N-P Darlington Power Transistors TERMINAL DESIGNATIONS For Low and Medium Frequency Power Switching, Hammer Driver, Audio Amplifier, and | Series and Shunt Regulator Applications ae O o Features: = Operates from IC without predriver B Gain of 1000 at 1A . TOP VIEW o2cs-39969 = Low leakage al high temperatures L Designed for completementary use with TIP110, TIP111 and TIP112 . & Hard glass passivation JEDEC TO-220AB = Wire-bonded construction The RCA-TIP115, TIP116, and TIP117 series are monolithic p-n-p silicon Darlington transistors designed for low and medium frequency power applications. The construction of these devices provides good foward-bias second-breakdown capability; their high gain makes it possible for them to be driven directly from integrated circuits. These devices are supplied in the JEDEC TO-220AB (VER- SAWATT) plastic package. ~ | | | I | 92C9+20863RE Fig. 1 - Schematic diagram for all types. MAXIMUM RATINGS, Absolute Maximum Values; TIP115 TIP116 TIP117 UNITS VOBO vavccccnrer scence ents e eee se eee see ee Dene ene eedeens en eer eees 60 80 100 Vv VOEO(SUS) vecreceecnreecereneeterenesteeneenreneerecvettpetereeuen 60 80 100 Vv 2 A 4 A 0.05 A 50 Ww 0.4 Wee 65 to 150 C At distance 1/8 In. (3.17 mm) from cage for 108 MAX. seccessecreaee 260 C $36 wee eee. 0876 G-03 O1 DE 3875081 00174935 2 I 3875081 G E SOLID STATE 01 17335 OD [-33-3/ 1 Darlington Power Transistees TIP115, TIP116, TIP117 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C TEST CONDITIONS LIMITS CHARACTERISTIC Voltage Current TIP115 TIPI16 TiP117,s | UNITS. Vde Adc Vce Vee Ic IB MIN. | MAX. | MIN. | MAX. | MIN. | MAX. -608 _ _ ~ -1 _ _ - IcBo -80a _ _ - -1 =_ _ le =0 1 -100a | _ _ _ _ _ - mA * _ _ . _ _ 2 _ _ a Iceo -40 _ _ 0 _ - ~_ 2 - - -50 = _ 0 - _ -2 leso 5 0 _ _ -2 _ -2 -2 mA Vceo(sus) _ |-0.03b| o -60 _ -80 _ ~100 Vv -4 _ -1b _ 1000 - 1000 - 1000 _ hre _ 4 _ -ab 500 _ 500 - 500 Vee 4 - -2b - _ -2.8 _ -2.8 _ 2.8 V Vce(sat) - _ -2b |-0.008] -2.5 - -2.5 - "2.5 Cano -108 _ 400 _ 100 _ 100 pF hie -o | | 075 | 25 TYP. 25 TYP. 25 TYP, _ {= 1.0 mHz / ism 1.25 4.25 4.25 A t0, 5s non-rep. pulse 40 7 ~ ~ pt ~ ~ fu 7 Resc _ ~_ - 2.5 - 2.5 _ 2.5 C/W Reva _ _ _ _ _ 62.5 - 62.5 - 62.5 Vcp value, Pulsed: Pulsed duration = 300 ys, duty factor < 2%. i NOTE CURRENT OFAATING AT CONSTANT n He TAGE APPLES ONLY TO THE DISS.PATION- LIWITED PORTION AKO THE Isyy -LIMHTED FATE PORTION OF MAX'MUL OPERATING AAEA CURVE. D0 NOT CERATE THE ada SPECIFIED SALUE FOR Ie aT v 2 < SES Hye Theattforstpearttees TH ret LESS rt a ay bet CURRENT AT SPECIFIED VOLTAGE Yet 29C OA PERCENTAGE OF RATED PERCENTAGE OF MAKIMUM DISSIPATION AT oy t PH de "Sy stp tit PHY ~ ~ o OC FORWARD CURRENT : I< + fy Te HEH sO OF 12S BO ' 1a oF . 1 10 CASE TEMPERATURE MTEI="C cys eoenen COLLECTOR CURRENT {ZGI-A Fig. 2- Derating curve for all types. Fig. 3 - Typical de-beta characteristics for all types. 337 0877 6-04 OL DEM 3875081 oo1733b uf 3875081 GE SOLID STATE ~ Darlington Power Transistors TIP115, TIP116, TIP 117 100, |CASE TEMPERATURE( Tc = 25C (CURVES MUST BE DERATED 8} LINEARLY WITH INCREASE IN TEMPERATURE) 2 a dito- at go 8h He ay ft punseo openarion 5 I (MAX) PULSEO ee w 4 c a > 9 1H g * eres TRE 5 eft toted HEEL eerie if Yi Ht Ze Ee 8 ele Gy 4 AN i iN 2 LEHI Voro (MAX.)+ 60 v (TIPIIS) Hg [3 Vceo (MAX.)280 V(TIPIT6} EI o VCEO(MAX.)# 100 V{TIPII7) D1E 17336 01 7-33-35) *or SINGLE NONREPETITIV! rm 8 COLLECTOR - TO~EMITTER VOLTAGE (Vee )V 92CM- 3516) Fig. 4 ~ Maximum operating areas for all types (Te = 25C). on IRR. i inA COLLECT CURRENT (Le 9208-34525 Fig. 5 - Typical saturation characteristics for all types. TEMPERATURE (Te 1128C wt 6S. is 3 bd ge ue az ze 3 2 es go es BE 5 za wur 3a aa Tt zz 32 5 23 oo to EMITTER-TO~-B8ASE VOLTAGE (Veg )-V COLLECTOR -TO-BASE VOLTAGE (Vegl-V 9208-35163 Fi . 7 - Typical common-base input (Cibo) or output (Coho) Capaciatance characteristic (all types). 338 COLLECTOR - TO-EMITTER VOLTAGE | Voge )s3 COLLECTOR CURRENT (Ie )-A 1 BASE-TO-EMITER VOLTAGE (Vag) 9208-39162 Fig. 6 - Typical transter characteristics for all types, COLLECTOR SUPPLY VOLTAGE Tay * #107250, Te 8 258C COLLECTOR CURRENT (Lc) AMPS 92C9-35104 Fig.8-Typical saturated switching charactaristics {all types). 0678 o1 ve 3a7504a1 0017337 & T 3875081 G E SOLID STATE : O1E 17337 D T= a3-Ry Darlington Power Transistors TIP115, TIP116, TIP117 ADJ FOR I Be tsn,2w Vel Yoo NON IND Re Q1,02 2N6354 fo CURRENT Q3 * 2N3762 iv" PROBE 04,05, 0001 pF IN4933 > Tg CURRENT Q6,07 * GA3725 QUAD 10 a 2479 on PROBE TRANSISTOR ARRAY 1woi4 & * THIS CONNECTION yINsesl SHOULD BE MADE AS 22k CLOSE AS POSSIBLE To 1. Ve(cLAMP} COLLECTOR OF 0005 pF av TRANSISTOR UNOER TEST xe = KELVIN SENSING 249 O CONNECTION + NOTE BATTERY SYMBOLS Veg Vg] + Vp2< "Lh s0 pr .VB(CLAMP) INDICATE RIGOROUSLY FILTERED VOLTAGE SOURCES AT THE CIRCUIT TERMINALS zov| TO ACCOMODATE THE FAST t, AND ty TIMES oT vy ANDO HIGH CURRENTS PRESENT IN THE CIRCUIT wo 70S Yen = 92CM~ 34847 ADU FOR Ig, FREQ* 500Hz Fig. 9 - Circuit for measuring switching times, 9208-34846 tyr A-B | Qe X- 8-6 ye -2 transitian * X-W NOTE: TRANSITION TIME FROM 90% ay TO 90% 'ag MUST BE LESS THAN 0.6 1. Fig, 10- Phase relationship between input and output currents showing referance points for specification of switching times. 339 G- 06 ,