1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1N6356 thru 1N6372, e3
MPT-5 thru MPT-45C, e3
DESCRIPTION APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are
JEDEC registered selections for both unidirectional and bidirectional devices.
The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are
bi-directional where they all provide a very low specified clamping factor for
minimal clamping voltages (VC) above their respective breakdown voltages
(VBR) as specified herein. They are most often used in protecting sensitive
components from inductive switching transients or induced secondary
lightning effects as found in lower surge levels of IEC61000-4-5 . They are
also very successful in protecting airborne avionics and electrical systems.
Since their response time is virtually instantaneous, they can also protect
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
DO-13
(DO-202AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Unidirectional and bidirectional TVS series for thru-hole
mounting
• Suppresses transients up to 1500 watts @ 10/1000 µs
• t
clamping (0 volts to V(BR) min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
• Working voltage (VWM) range 5 V to 45 V
• Low clamping factor (ratio of actual VC/VBR): 1.33 @
full rated power and 1.20 @ 50% rated power
• Hermetic sealed DO-13 metal package
• Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS are also available
by adding MQ, MX, MV, MSP prefixes respectively to part
numbers, e.g. MX1N6356, etc.
• RoHS Compliant devices available by adding “e3” suffix
• Surface mount equivalent packages also available as
SMCJ6356 – SMCJ6372 (consult factory for other
surface mount options)
• Plastic axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
• Designed to protect Bipolar and MOS Microprocessor
based systems.
• Protection from switching transients and induced RF
• ESD and EFT protection per IEC 61000-4-2 and -4-4
• Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
• Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
• Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
• Inherently radiation hard per Microsemi MicroNote
050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• 1500 Watts for 10/1000 μs with repetition rate of 0.01% or
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)
• Operating & Storage Temperatures: -65o to +175oC
• THERMAL RESISTANCE: 50oC/W junction to lead at
0.375 inches (10 mm) from body or 110 oC/W junction to
ambient when mounted on FR4 PC board with 4 mm2
copper pads (1 oz) and track width 1 mm, length 25 mm
• DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” or 10
mm from body (also see Figure 5)
• Forward surge current: 200 Amps for 8.3ms half-sine
wave at TA = +25oC for unidirectional only (1N6356-6364)
• Solder Temperatures: 260 o C for 10 s (maximum)
• CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
• FINISH: All external metal surfaces are Tin-Lead or
RoHS Compliant annealed matte-Tin plating
solderable per MIL-STD-750 method 2026
• POLARITY: Cathode connected to case and
polarity indicated by diode symbol
• MARKING: Part number and polarity diode symbol
• WEIGHT: 1.4 grams. (Approx)
• TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
• See package dimension on last page
Microsemi
Scottsdale Division
Page 1
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
Copyright © 2006
3-31-2006 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1N6356 thru 1N6372, e3
MPT-5 thru MPT-45C, e3
ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)
MICROSEMI
PART NUMBER
STAND-OFF
VOLTAGE
(NOTE 1)
VWM
VOLTS
MAXIMUM
REVERSE
LEAKAGE
@VWM
ID
μA
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
VOLTS
MAXIMUM
PEAK PULSE
CURRENT
IPP3
A
1N6356
1N6357
1N6358
1N6359
1N6360
MPT-5
MPT-8
MPT-10
MPT-12
MPT-15
5.0
8.0
10.0
12.0
15.0
300
25
2
2
2
6.0
9.4
11.7
14.1
17.6
7.1
11.3
13.7
16.1
20.1
7.5
11.5
14.1
16.5
20.6
160
100
90
70
60
1N6361
1N6362
1N6363
1N6364
MPT-18
MPT-22
MPT-36
MPT-45
18.0
22.0
36.0
45.0
2
2
2
2
21.2
25.9
42.4
52.9
24.2
29.8
50.6
63.3
25.2
32.0
54.3
70.0
50
40
23
19
VF at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.
ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)
1N6365
1N6366
1N6367
1N6368
MPT-5C
MPT-8C
MPT-10C
MPT-12C
MPT-15C
5.0
8.0
10.0
12.0
15.0
300
25
2
2
2
6.0
9.4
11.7
14.1
17.6
7.1
11.4
14.1
16.7
20.8
7.5
11.6
14.5
17.1
21.4
160
100
90
70
60
1N6369
1N6370
1N6371
1N6372
MPT-18C
MPT-22C
MPT-36C
MPT-45C
18.0
22.0
36.0
45.0
2
2
2
2
21.2
25.9
42.4
52.9
24.8
30.8
50.6
63.3
25.5
32.0
54.3
70.0
50
40
23
19
C Suffix indicates Bidirectional
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the DC or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
Microsemi
Scottsdale Division
Page 2
Copyright © 2006
3-31-2006 REV B
FIGURE 1 FIGURE 2
Peak Pulse Power vs. Pulse Time Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1N6356 thru 1N6372, e3
MPT-5 thru MPT-45C, e3
Pulse current (IP) in percent of IPP
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of peak
value (IPP).
time (t) in milliseconds FIGURE 4
FIGURE 3 Typical Capacitance vs. Breakdown Voltage
Pulse wave form for exponential surge (Unidirectional Types)
PACKAGE DIMEN SIONS
FIGURE 5
Typical Capacitance vs. Breakdown Voltage
(Bidirectional Types)
Stead
y
-state
p
ower dissi
p
ation
(
watts
)
Microsemi
Scottsdale Division
Page 3
Copyright © 2006
3-31-2006 REV B
FIG. 5 Steady-state power derating curve
T
L
–
lead Tem
p
erature oC
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
