DPTDELECTAONICS 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS PACKAGE DIMENSIONS | seg 047 (1.20) 4 | 3 t 270 (6.88) 248 (6.30} 4 40 1 2 fo .187 (4.75) .| 175 (4.48) 0 to 15 100 (2.54) TYP 1 a COLLECTOR ANODE id 4] COLLECTOR E| 3] EMITTER CATHODE [2| 3] EMITTER Equivalent Circuil (H11AA814) Equivalent Circuit (H11A817} NOTE: ALL DIMENSIONS ARE IN INCHES (mm) PACKAGE CODE T H11AA814 SERIES H11A817 SERIES DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, con- nected in inverse parallel, driving a single silicon pho- totransistor in a 4-pin dual in-line package. The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransis- tor in a 4-pin dual in-line package. a Compact 4-pin package = Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: 50-600% H11AA814A: 50-150% H11A817A: 80-160% H11A817B: 130-260% H11A817C: 200-400% H11A817D: 300-600% APPLICATIONS H11AA814 Series a AC line monitor a Unknown polarity DC sensor a Telephone line interface H11A817 Series = Power supply regulators m Digital logic inputs m= Microprocessor inputs ABSOLUTE MAXIMUM RATING TOTAL PACKAGE Storage temperature ................, -55 to 150 C Operating temperature ............... -55 to 100 C Lead solder temperature ........... 260 C for 10 sec Power dissipation ...............0000005- 200 mW INPUT DIODE Power dissipation (25 C ambient) ............ 70 mW Derate linearly (above 25C) ............ 1.33 mW/? C Continuous forward current ..............0005 50 mA Peak forward current (1 p's pulse, 300 pps) ......... 1A Reverse voliage (H11A817) ................-.-. 5V OUTPUT TRANSISTOR Power dissipation (25 C ambient) ..... 150 mw Derate linearly (above 25C) ...... 2.0 mW? C VCEO Le ee ee eee eens 35 V VECO Le ens 6V Continuous collector current .......... 50 mA Mm 7466851 OOObIb4 O73 OPTOELECTRONICS 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS ELECTRO-OPTICAL CHARACTERISTICS (Tas = 25 C Unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS (Applies to all unless indicated otherwise) PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS INPUT DIODE Forward voltage H11A817 Ve 1.2 1.5 Vv IF = 20 mA H11AA814 Ve 1.2 1.5 V IF =+20 mA Reverse current H11A817 IR .001 10 WA VR =5V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVceo 35 100 V lo=1mA, Ip =0 Emitter to collector BVEco 6 10 V le = 100 pA, Ip = 0 Collector dark current IcEO .025 100 nA Voce = 10 V, Ir = 0 Capacitance Cce 8 pF Voce = OV, f= 1 MHz TRANSFER CHARACTERISTICS CHARACTERISTIC SYMBOL MIN TYP MAX UNITS TEST CONDITIONS DC current transfer ratio H11AA814 CTR 20 300 % IF = +1 MA,Vce = 5V H11AA814A CTR 50 150 % lp =+1 MAVce = 5V H11A817 CTR 50 600 % lr = 5 MA,Vce = 5V H11A817A CTR 80 160 % H11A817B CTR 130 260 % H11A817C CTR 200 400 % H11A817D CTR 300 600 % Saturation Voltage VcE (SAT) 0.1 0.2 Vv IF = (+)20 mA, Ic = 1 MA Rise time (non saturated) tr 2.4 18 Us Ic =2 mA, Voce =2V, Ri = 100 QO Fall time (non saturated) tt 2.4 18 Us Ic =2 MA, Vce =2V, R_ = 100 Q CHARACTERISTIC SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Steady-state isolation voltage Viso 5300 Vrms 1 Minute Isolation resistance Riso 10" Q Vio = 500 VDC Isolation capacitance Ciso 0.5 pF Vio =O, f = 1 MHz ME 746685) 0006969 TOT yn DPIDELECTRONICS 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS | TYPICAL CHARACTERISTICS 14 : 1.2 - | |__| ; Prom 12 mm ; L \ 26C 25C y 5 mA, Ve = 5 V, Ta "7 a iy > ce > ot = cH a2" cz | / N a5 / zu N MW - = 0.6 5 8 ge | 25 Ri 3 = 2 o4 Ht $ 2 < 0.6 RYO 5 oO 0.2 0 04 0 5 10 1 20 25 30 -50 25 0 +25 +50 +75 +100 FORWARD CURRENT ~ |-(mA) AMBIENT TEMPERATURE ( C) FG. 1 - Normalized CTR vs. Forward Current FIG. 2 - Normalized CTR vs. Ambient Temperature 14 T |,= 20 mA 17 I= 1mA 12 V4 1.5 = 1 oe a ua = 13 _ 08 | LT g | = T=-59 C ea | a S it 7 06 = Ln a | La = T= ee LA 09-4 .04 c L~ T=10 re 02 0.7 0 0.5 50-28 0 2% 500 75 100125 04 02 OF 10 20 5 10 2 50 100 AMBIENT TEMPERATURE ( C) FORWARD CURRENT |, (mA) FIG. 3 - Veg joan VS. Ambient Temperature FIG. 4 - Forward Voltage vs. Forward Current Mi 7466851 0006970 721 OPTOELECTRONICS 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS TYPICAL CHARACTERISTICS 25 10 = 20mA | 1 20 = i 40" x= E / | = 15 ia _ 10? & = D> = - = 10mA g _ a: e Ly 10 @ 10 a Qo oO / | 10! 5 / ,=5mA | La 404 L =1mA 0 . 108 QO 1 2 8 4 5 6 *# 8 9 10 0) 8B 50 75 ~100 125 COLLECTOR-EMITTER VOLTAGE Vc (V) AMBIENT TEMPERATURE ( 6) FIG. 5 - Collector Current vs. Collector-Emitter Voltage FIG. 6 - Collector Leakage Current vs. Ambient Temperature 1000 100 an Z a wu a os 10 = x= e = wm 01 . 0.1 1 10 100 R-LOAD RESISTOR (k Q) FIG. 7 - Switching Speed vs. Load Resistor (TYP) Call QT Optoelectronics for more information or the phone number of your nearest distributor. United States 800-533-6786 France 33 01/43.99.25.12 Germany 49 089/96.30.51 = United Kingdom 44 [0] 1296/39.44.99 Asia/Pacific 603/735-2417 1996 QT Optoelectronics QT-012-A ME 7466851 OO0b971 bbs a uf DS 104