© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 250 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 120 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, Pulse Width Limited by TJM 300 A
IATC= 25°C 60A
EAS TC= 25°C 2.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 700 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Force (PLUS247) 20..120/4.5..27 N/lb.
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
Weight PLUS247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 250 V
VGS(th) VDS = VGS, ID = 4mA 2.5 5.0 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS= 0V 25 μA
TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 19 24 mΩ
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
IXFK120N25P
IXFX120N25P
VDSS = 250V
ID25 = 120A
RDS(on) ≤≤
≤≤
≤ 24mΩΩ
ΩΩ
Ω
DS99379F(5/09)
trr ≤≤
≤≤
≤ 200ns
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
GDS
TO-264 (IXFK)
PLUS247 (IXFX)
(TAB)
Features
zInternational Standard Packages
zFast Intrinsic Diode
zAvalanche Rated
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
IXFK120N25P
IXFX120N25P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 45 70 S
Ciss 8700 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1300 pF
Crss 240 pF
td(on) 30 ns
tr 33 ns
td(off) 130 ns
tf 33 ns
Qg(on) 185 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 80 nC
RthJC 0.18 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 120 A
ISM Repetitive, Pulse Width Limited by TJM 300 A
VSD IF = 120A, VGS = 0V, Note 1 1.5 V
trr 200 nS
QRM 0.8 μC
IRM 8.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
TO-264 (IXFK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK120N25P
IXFX120N25P
Fig. 1. Ou tp u t C h aracter isti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
DS
- Volt s
I
D
- Am peres
V
GS
= 10V
9V
7
V
8
V
6
V
Fig. 2. Extended Output Characteristics
@ 25º C
0
40
80
120
160
200
240
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volt s
I
D
- Am peres
V
GS
= 10V
7
V
6
V
9
V
8
V
Fi g . 3. Ou tp u t C h ar acter i stic s
@ 125ºC
0
20
40
60
80
100
120
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
DS
- Volt s
I
D
- A mp ere s
V
GS
= 10V
9V
8
V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 60A Value
vs. Junction Temp erature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orma liz ed
V
GS
= 10V
I
D
= 120A
I
D
= 60A
Fig. 5. R
DS(on)
Normalized to I
D
= 60A Val u e
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 30 60 90 120 150 180 210 240 270
I
D
- Amp eres
R
DS(on)
- N ormaliz ed
V
GS
= 10V
15V
- - - -
T
J
= 150ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Current vs.
Case Temp er atur e
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Am peres
External Lead Cur r ent Limit
IXFK120N25P
IXFX120N25P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- Am peres
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- A mperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
- V olt s
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 125V
I
D
= 60A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK120N25P
IXFX120N25P
IXYS REF: T_120N25P(88)4-27-09
Fig. 13. Maxim u m T ransient T hermal Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pu l se Width - Seconds
Z
(th)JC
- ºC / W
