Industrial & Multimarket
Data Sheet
Rev. 2.0, 2010-05-31
Final
2nd Generation thinQ!™
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
SiC
Silicon Carbide Diode
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C
Final Data Sheet 2 Rev. 2.0, 2010-05-31
1 Description
The second generation of Infineon SiC Schottky diodes has emerged over the
years as the industry standard. The IDVxxS60C family is extending the already
broad portfolio with the TO220FullPAK package. In order to greatly reduce the
impact of the internal isolation of the FullPAK on the thermal performance, Infineon
is applying its patented diffusion soldering process for attaching the chip to the
leadframe. The result is nearly identical thermal characteristics to those of the SiC
diodes in the non-isolated TO220 package.
Features
• Revolutionary semiconductor material - Silicon Carbide
• Nearly no reverse / forward recovery charge
• High surge current capability
• Fully isolated package with nearly similar Rth,jc as the standard T0220
• Suitable for high temperature operation
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
•Switching behavior independent of forward current, switching speed and
temperature
Benefits
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Good thermal performance without the need for additional isolation layer and washer
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures and less fans
• Reduced EMI
Applications
Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit
VDC 600 V
QC 3.2 nC
IF @ TC < 120°C 2A
Table 2 Pin Definition
Pin 1 Pin2 Pin 3
C A n.a.
Type / Ordering Code Package Marking Related Links
IDV02S60C PG-TO220 FullPAK D02S60C IFX SiC Diodes Webpage
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Table of Contents
Final Data Sheet 3 Rev. 2.0, 2010-05-31
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 Electrical chara cteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table of Contents
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Maximum ratings
Final Data Sheet 4 Rev. 2.0, 2010-05-31
2 Maximum ratings
3 Thermal characteristics
Table 3 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous forward current IF--2 ATC= < 120°C
Surge non-repetitive IF, SM --11.5 TC= 25°C, tp = 10 ms
forward current, sine halfwave - - 9.7 TC= 150°C, tp = 10 ms
Non-repetitive peak forward current IF, max --100 TC= 25°C, tp = 10 µs
i² t value ∫i²dt - - 0.61 A²s TC= 25°C, tp = 10 ms
-0.44 TC= 150°C, tp = 10 ms
Repetitive peak reverse voltage VRRM --600 VTj= 25°C
Diode dv/dt ruggedness dv/dt - - 50 V/ns VR= 0...480 V
Power dissipation Ptot --18 WTC= 25 °C
Operating and storage temperature Tj; Tstg - 55 - 175 °C
Mounting torque - - 50 Ncm M2.5 screws
Table 4 Thermal characteristics TO-220 FullPAK
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case RthJC -- 8.5K/W
Thermal resistance, junction -
ambient
RthJA - - 62 leaded
Soldering temperature,
wavesoldering only allowed at
leads
Tsold - - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Electrical characteristics
Final Data Sheet 5 Rev. 2.0, 2010-05-31
4 Electrical characteristics
Table 5 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
DC blocking voltage VDC 600 - - V Tj= 25 °C, IR= 0.015 mA
Diode forward voltage VF-1.71.9 IF= 2 A, Tj= 25 °C
-2.12.6 IF= 2 A, Tj= 150 °C
Reverse current IR-0.2315µAIR= 600 V, Tj=25 °C
- 1 150 IR= 600 V, Tj=150 °C
Table 6 AC characterist ics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Total capacitive charge Qc-3.2- nCVR= 400 V, F ≤I Fmax
diF /dt =200 A/μs,
Tj=150 °C
Switching time1)
1)tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from
trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
tc-- <10ns
C-60- pFVR= 1 V, f= 1 MHz
-8- VR= 300 V, f= 1 MHz
-8- VR= 600 V, f= 1 MHz
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Electrical characteristics diagrams
Final Data Sheet 6 Rev. 2.0, 2010-05-31
5 Electrical characteristics diagrams
Table 7
Power dissipation Diode forward current
Ptot = f(TC) IF=f(TC); T j≤ 175 °C
Table 8
Typ. forward characteristic Typ. forward characteristic in surge current
IF=f(VF); tp=400 µs; parameter: Tj IF=f(VF); tp=400 µs; parameter: Tj
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Electrical characteristics diagrams
Final Data Sheet 7 Rev. 2.0, 2010-05-31
Table 9
Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage
QD=f(diF/dt)4); Tj= 150 °C; IF ≤ IF max I
R =f(VR)
1) Only capacitive charge occuring, guaranteed by design
Table 10
Typ. transient thermal impedance Typ. capacitance vs. reverse voltage
Zthjc=f(tp) ; parameter: D = tP / T C=f(VR); TC=25 °C, f=1 MHz
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Electrical characteristics diagrams
Final Data Sheet 8 Rev. 2.0, 2010-05-31
Table 11
Typ. C stored energy
EC=f(VR)
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Package outlines
Final Data Sheet 9 Rev. 2.0, 2010-05-31
6 Package outlines
Figure 1 Outlines TO-220 FullPAK, dimensions in mm/inches
2nd Generation thinQ!™ SiC Schottky Diode
IDV02S60C
Revision History
Final Data Sheet 10 Rev. 2.0, 2010-05-31
7 Revision History
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2010-05-31
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode
Revision History: 2010-05-31, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last revision)
2.0 Release of final data sheet
