UNISONIC TECHNOLOGIES CO., LTD
2N5401 PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2011 Unisonic Technologies Co., Ltd QW-R201-001,E
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* Collector-emitter voltage:
VCEO = -150V
* High current gain
SOT-89
1
TO-92
1
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
2N5401L-x-AB3-R 2N5401G-x-AB3-R SOT-89 B C E Tape Reel
2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C Tape Box
2N5401L-x-T92-K 2N5401G-x-T92-K TO-92 E B C Bulk
2N5401L-x-T92-R 2N5401G-x-T92-R TO-92 E B C Tape Reel
2N5401 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
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ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Collector Dissipation TO-92 PC 625 mW
SOT-89 500 mW
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C = -100μA, IE = 0 -160 V
Collector-Emitter Breakdown Voltage BVCEO I
C = -1mA, IB = 0 -150 V
Emitter-Base Breakdown Voltage BVEBO IE = -10μA, IC = 0 -5 V
Collector Cut-off Current ICBO V
CB = -120V, IE= 0 -50 nA
Emitter Cut-off Current IEBO V
EB = -3V, IC = 0 -50 nA
DC Current Gain (Note)
hFE1
hFE2
hFE3
VCE = -5V, IC = -1mA
VCE = -5V, IC = -10mA
VCE = -5V, IC = -50mA
80
80
80
400
Collector-Emitter Saturation Voltage VCE(SAT) IC = -10mA, IB = -1mA
IC = -50mA, IB= -5mA
-0.2
-0.5 V
Base-Emitter Saturation Voltage VBE(SAT) IC = -10mA, IB = -1mA
IC = -50mA, IB= -5mA
-1
-1 V
Current Gain Bandwidth Product fT VCE = -10V, IC = -10mA
f = 100MHz 100 400 MHz
Output Capacitance COB V
CB = -10V, IE= 0, f = 1MHz 6.0 pF
Noise Figure NF IC = -0.25mA, VCE = -5V
RS = 1kΩ, f = 10Hz ~ 15.7kHz 8 dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK A B C
RANGE 80-170 150-240 200-400
2N5401 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
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TYPICAL CHARACTERISTICS
2N5401 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R201-001,E
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
