eu ean. a we a act ese aa wee one MOTOROLA SC IXSTRS/R FT 4h DE ese7asy gosouby | i "6367254 MOTOROLA SC (XSTRS/R F) 96D 80464 Dp MOTOROLA | SEMICONDUCTOR Sauaammnemnenn 2N6315, ste = : moo 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 7.0 AMPERE COMPLEMENTARY SILICON . designed for general-purpose power amplifier and switching POWER TRANSISTORS applications. 60-80 VOLTS 90 WATTS @ Low Collector-Emitter Saturation Voltage VCE (sat) = 1.0 Vde (Max) @ Ic = 4.0 Ade @ Low Leakage Current ICEx = 0.25 mAdc (Max) @ Excellent DC Current Gain hpg = 20 (Min) @ Ic = 2.5 Adc @ High Current Gain Bandwidth Product fT = 4.0 MHz @ Ic = 0.25 Ade *MAXIMUM RATINGS 2N6315 | 2N6316 Rating Symbol 2N6317 | 2N6318 Unit Collector-Emitter Vaitage VcEO 60 80 Vde u- Collector-Base Voltage VcBs 60 80 Vdc P | | Emitter-Base Voltage VeB 5.0 Vde : | 8 Tt c i bo Collector Current Continuous le 70 Adc fo f_------} Peak 16 Ty Base Current Ig 2.0 Adc E lL_p K Total Device Dissipation Te = 25C Pp 90 Watts SEATING PLANE ef Derate above 25C 0.515 wiet Operating and Storage Junction TS. Tstg -65 to +200 C Temperature Range THERMAL CHARACTERISTICS t Characteristic Symbol Value Unit Thermal Resistance, Junction ta Case Ojc 1.94 ciw "Indicates JEDEC registered data, Limits and conditions differ on some parameters and re- registration reflecting these changes has been requested. All above values meet or exceed . present JEDEC registered data. STYLE 1. PIN 1. BASE. 2 EMITTER FIGURE 1 POWER DERATING CASE: COLLECTOR 140 2 120 E < = 100 2 oO z= & 3 a uw = = = 2 s = = 0 680 ws 60 " = Tg. CASE TEMPERATURE (C) AIL JEDEC Oimensions and and Notes Apply. CASE 80-02 Safe Area Limits are indicated by Figure 13. TO-213AA 3-198 ee eter i i eT NPN 2N6315, 2N6316 PNP 2N6317, 2N6318 *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) [ 6367254 MOTOROLA SC (XSTRS/R F) 96D 80465 _ T-33-/3 D Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) VCEO(sus) Vde (ig = 100 mAde, Ig = 0} 2N6315,2N6317 60 - 2N6316,2N6318 80 - Collector Cutoff Currant. IcEO mAdc VcE = 30 Vde, ig = 0) 2N6315,2N6317 - 05 (Vice = 40 Vde, ig = 0} 2N6316,2N6318 ~ Os Collector Cutoff Current IcEx mAdec (Vee = 60 Vde, Ve (off) = 1.5 Vde) 2NG315,2N6317 - 0.25 (VcE = 80 Vde, Vee (oft) = 1.5 Vde) 2N6316,2N6318 - 0.25 (Vee = 60 Vde Vege (oft) =1.5 Vde,To =450C} 2N6315,2N6317 = 2.0 (VcE = 80 Vde,VgE (oft) 21.5 Vdc,Te =150C) * 2N6316,2N6318 - 2.0 Collector Cutoff Current Icao mAdc (Veg = 60 Vde, Ie = 0} 2N6315,2N6317 - 0.25 (Veg = 80 Vac, tg = 0) 2N6316,2N6318 _ 0.25 Emitter Cutoff Current lEBO - 1.0 mAdc (Veg = 5.0 Vde, Ic = 0} ON CHARACTERISTICS DC Current Gain (1) bee - {Ig = 0.8 Ade, Vog = 4.0 Vde} 35 ~ {ic = 2.5 Ade, Vce = 4.0 Vdch 20 100 (Ig = 7.0 Ade, Vcg = 4.0 Vde) 4.0 ~ Collector-Emitter Saturation Voltage (1) VCE (sat) Vdc (Ic = 4.0 Adc, Ig = 0.4 Ade} - 1.0 (Ic = 7.0 Ade, Ig = 1.75 Ade) Zz 2.0 Base-E mitter Saturation Voltage (1) VBE {sat} - 2.5 Vde {Ig = 7.0 Adc, Ig = 1.75 Adc) Base-E mitter On Voltage (1) VRE (on) - 1.5 Vde {le = 2.6 Ade, Voge = 4.0 Vde} OYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (2) fr 4.0 MHz (Ig = 0.25 Adc, Vcg = 10 Vdc, feest = 1.0 MHz} Output Capacitance Cob pF (Vcp = 10 Vdc, le = 0, f = 1.0 MHz] 2N6317,2N6318 - 300 2N6315,2N6316 = 200 Smalt-Signal Current Gain hte 20 - - (ig = 0.8 Ade, Veg = 4.0 Vide, f = 1.0 kHz) SWITCHING CHARACTERISTICS Rise Time te ~- 0.7 us Storage Time Wec = 30 Vide, t = 2.6 Adc, ts - 1.0 HS Falt Time 'g1 = Ip2 = 0.25 Ade) i = 08 us "Indicates JEDEC Registered Data. (1) Pulse Test: Pulse WidthS 300 us, Duty Cycte < 2 0%. (2) tr =Thte[ * feast 3-199 Reine ae = - ~ ae i MOTOROLA SC {XSTRS/R Ft qb DE Beaezasy OOSO4LL 2 7 "6367254 MOTOROLA SC SC (XSTRS/R F) + 96D 80466 OD ; | NPN 2NG315, 2N6316 T-2I5-/3 PNP 2N6317, 2N6318 7T-33-! r ' r ' : NPN PNP 2N6316 and 2N6316 2N6317 and 2N6318 FIGURE 2 DC CURRENT GAIN Voes4.0Vv = Zz < ag o o S e s 2 w a <= cz = = = o o oe o a a ui wi = e 10 0.07 (0.1 02 03 05 07 1.0 20 70 Ig, COLLECTOR CURRENT (AMPERES) Ic, COLLECTOR CURRENT (AMPERES) FIGURE 3 COLLECTOR SATURATION REGION Je Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Vce, COLLECTOR-EMITTER VOLTAGE [VOLTS) 1g, BASE CURRENT (mA) (g, BASE CURRENT {mA} FIGURE 4 ON VOLTAGES 2.0 16 B a 3 2 = s 12 we ww 3 g BE e - 3 a 98 > > > > Vee @Vce=40V a4 @igilg = 10 2.0 0.1 02 03 05 7.0 Ig, COLLECTOR CURRENT {AMPERES) Ic, COLLECTOR CURRENT (AMPERES) 3-200 TOW TL SIES IIT me MOTOROLA SC {XSTRS/R FI Ib DE Beseresy OOa0ub? 4 a ee EES EE ene oe EE = . a anes 37264 MOTOROLA SC CXSTRS/R F)...s=Ciw BD BN4E7) OCOD. NPN 2N6315, 2N6316 7-33 -/3 PNP 2N6317, 2NG6318 . | 7. 32-2) ton rn et FIGURE 5 ACTIVE-REGION SAFE OPERATING AREA 20 10 7.0 5.0 3.0 2.0 Ty = LIMITED 1.0 LIMITATION @ Tr = LE PULSE) : 07 Below Rated : 05 03 2N6315,17 " 2N6316, 18 0.2 50 67.0 10 20 30 60 70 100 Vce, COLLECTOR-EMITTER VOLTAGE (Vl TS) Ic, COLLECTOR CURRENT (AMPERES) There are two limitations on the power handling ability of a The data of Figure 5 is based on Th(pk) = 200C; Tc is transistor: average junction temperature and second breakdown. variable depending onconditions. Second breakdown pulse limits Safe operating area curves indicate Ic Veg limits of the tran- are valid for duty cycles to 10% provided Tyipk) <200c . sistor that must be observed for reliable operation; i.e., the TJtpk} May be calculated from the data in Figure 6. At high transistor must not be subjected to greater dissipation than the case temperatures, thermal limitations will reduce the power that curves indicate. can be handled to values less than the limitations imposed by second breakdown. FIGURE 6 THERMAL RESPONSE =r Gc 0.3 T 9)C = 1.94CMW Max 02 Ptpk) CURVES APPLY . TRAIN SHOWN AL T 0.5 Te 05 (SINGLE "2 DUTY CYCLE, 0 = 14/42 c(t), TRANSIENT THERMAL RESISTANCE (NORMALIZEO) 0.01 0.01 0.02 0.03 0.07 0.1 20 10 70 700 1000 t, TIME (ms) 3-201