High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS(on) 1200 V 1100 V 3A 3A 4.5 4.0 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 3N120 3N110 1200 1100 V V VDGR TJ = 25C to 150C; RGS = 1 M 3N120 3N110 1200 1100 V V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, pulse width limited by TJM IAR EAR dv/dt PD D (TAB) 3 A 12 A TC = 25C 3 A TC = 25C 20 mJ 700 mJ 5 V/ns EAS IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C TJ 150 W -55 to +150 C TJM 150 C Tstg -55 to +150 C 300 C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque (TO-220) Weight TO-220 TO-263 Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 A IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 (c) 2001 IXYS All rights reserved 1.13/10 Nm/lb.in. 4 2 g g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3N120 3N110 1200 1100 2.5 TO-220 (IXTP) V V 4.5 V 100 nA TJ = 25C TJ = 125C 25 1 A mA 3N120 3N110 4.5 4.0 G DS TO-263 (IXTA) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l Easy to mount Space savings High power density 98844A (11/01) IXTA/IXTP 3N120 IXTA/IXTP 3N110 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 * ID25, Note 1 1.5 Ciss Coss 2.2 S 1050 1300 pF 100 125 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 25 td(on) 17 50 pF ns tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 15 ns td(off) RG = 4.7 (External), 32 ns tf 18 ns Qg(on) 39 nC Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 9 nC 22 nC RthJC RthCK 0.8 (TO-220) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM TO-220 (IXTP) Outline Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W 0.25 K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 A Repetitive; pulse width limited by TJM 12 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V t rr IF = IS, -di/dt = 100 A/s, VR = 100 V 700 TO-263 (IXTA) Outline ns Notes: 1. Pulse test, t 300 s, duty cycle d 2 % 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXTA/IXTP 3N120 IXTA/IXTP 3N110 4.0 5 VGS = 9V 8V 7V 6V TJ = 25OC 3.0 5V ID - Amperes ID - Amperes 4 TJ = 125OC VGS = 9V 8V 7V 6V 3.5 3 2 2.5 2.0 5V 1.5 1.0 1 4V 0.5 4V 0.0 0 0 2 4 6 8 0 10 12 14 16 18 20 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig.1 Output Characteristics @ Tj = 25C Fig. 2 Output Characteristics @ Tj = 125C 2.50 2.8 VGS = 10V VGS = 10V TJ = 125OC 2.5 RDS(ON) - Normalized RDS(ON) - Normalized 2.25 2.00 1.75 1.50 1.25 1.00 2.2 ID = 3A 1.9 1.6 ID =1.5A 1.3 0.75 0 1 2 3 4 5 TJ = 25OC 1.0 25 50 ID - Amperes 100 125 150 TJ - Degrees C Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 4.0 3.0 IXT_3N110 3.5 2.5 IXT_3N120 ID - Amperes 3.0 ID - Amperes 75 2.5 2.0 1.5 2.0 1.5 TJ = 125oC 1.0 1.0 TJ = 25oC 0.5 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0.0 3.5 T C - Degrees C Fig. 5 Drain Current vs. Case Temperature (c) 2001 IXYS All rights reserved 4.0 4.5 5.0 5.5 6.0 VGS - Volts Fig. 6 Drain Current vs Gate Source Voltage IXTA/IXTP 3N120 IXTA/IXTP 3N110 12 f = 1MHz Ciss 10 1000 Capacitance - pF VDS = 600V ID = 1.5A VGS - Volts 8 6 4 Coss 100 Crss 2 0 0 10 20 30 40 50 10 60 0 5 10 Gate Charge - nC 15 20 25 30 35 40 VDS - Volts Fig. 7 Gate Charge Characteristic Curve Fig. 8 Capacitance Curves 5 VGS = 0V ID - Amperes 4 3 TJ = 125OC TJ = 25OC 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 9 Drain Current vs Drain to Source Voltage R(th)JC - K/W 1.00 0.10 Single Pulse 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025