ASI 1N253 SILICON POWER RECTIFIER DESCRIPTION: PACKAGE STYLE DO-4 The ASI 1N253 is Designed for : DIMENSIONS General Purpose Power Supply 8 INCHES MILLIMETERS Applications. [MIN. | MAX. | MIN. | MAX. A 0.405 10.28 b 0.250 6.35 Cc D 0.505 12.82 MAXIMUM RATINGS D, [0.265 | 0424 | 6.74 | 10.76 _ E [0423 | 0438 | 10.75 | 11.12 lo 1.0 A @ To = 135 C F, 10075 | 0.175 | 191 | 4.44 J |0600 | 0800 | 15.24 | 20.32 Vrwm 100 V oM |0.163 | 0.189 4.15 4.80 N [o422 | 0.453 | 10.72 | 11.50 Ty -65 C to +170 C Ni 0.078 1.98 $ Tstc -65 C to +175 C Cathode to Stud oT 10060 | 0.095 | 1.53 | 241 @W | 10-32 | UNF-2A | 10-32 |UNF-2A Bic 35 C/W CHARACTERISTICS 1,=25c SYMBOL TEST CONDITIONS MINIMUM | TYPICAL | MAXIM UNITS Ve = 100 V 10 100 Ir R pA Ty = 150 C 100 1000 Ve IF=1.0A 1.2 Vv lesm NON REPETITIVE t= 8.3mS 15 A www.DataSheet.in ADVANCED SEMICONDUCTOR, INC. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 TELEX: 18-2651 FAX (818) 765-3004 1/1